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Two n-channel MOSFETs, T1 and T2, are identical in all respects except that the width of T2 is double that of T1. Both the transistors are biased in the saturation region of operation, but the gate overdrive voltage ($V_{GS}-V_{TH}$) of T2 is double that of T1,where $V_{GS}$ and $V_{TH}$ are the gate-to-source voltage and threshold voltage of the transistors, respectively. If the drain current and transconductance of T1 are $I_{D1}$ and $g_{m1}$ respectively, the corresponding values of these two parameters for T2 are

  1. $8I_{D1}$ and $2g_{m1}$
  2. $8I_{D1}$ and $4g_{m1}$
  3. $4I_{D1}$ and $4g_{m1}$
  4. $4I_{D1}$ and $2g_{m1}$
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