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Consider the recombination process via bulk traps in a forward biased $pn$ homojunction diode. The maximum recombination rate is $U_{\text{max}}$. If the electron and the hole capture cross-sections are equal, which one of the following is $\text{FALSE}$?

  1. With all other parameters unchanged, $U_{\text{max}}$ decreases if the intrinsic carrier density is reduced.
  2. $U_{\text{max}}$ occurs at the edges of the depletion region in the device.
  3. $U_{\text{max}}$ depends exponentially on the applied bias.
  4. With all other parameters unchanged, $U_{\text{max}}$ increases if the thermal velocity of the carriers increases.
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