in Others edited by
22 views
0 votes
0 votes

A $p-$type semiconductor with zero electric field is under illumination (low level injection) in steady state condition. Excess minority carrier density is zero at $x = \pm 2l_{n},$ where $l_{n} = 10 ^{-4} \; \text{cm}$ is the diffusion length of electrons. Assume electronic charge, $ q = – 1.6 \times 10^{-19} \; \text{C.}$ The profiles of photo-generation rate of carriers and the recombination rate of excess minority carriers $(R)$ are shown. Under these conditions, the magnitude of the current density due to the photo-generated electrons at $x = + 2l_{n}$ is ______________ $\text{mA/cm}^{2}$ (rounded off to two decimal places).

 

in Others edited by
by
6.0k points
22 views

Please log in or register to answer this question.

Welcome to GO Electronics, where you can ask questions and receive answers from other members of the community.