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Consider an ideal long channel $n \text{MOSFET}$ (enhancement-mode) with gate length $10 \; \mu \text{m}$ and width $100 \; \mu \text{m}.$ The product of electron mobility $(\mu_{n})$ and oxide capacitance per unit area $(C_{\text{ox}})$ is $\mu_{n} C_{\text{ox}} = 1 \; \text{mA/V}^{2}.$ The threshold voltage of the transistor is $1 \; \text{V}.$ For a gate-to-source voltage $V_{GS} = [2 – \sin (2t)] V $ and drain-to-source voltage $V_{DS} = 1 \; \text{V}$ (substrate connected to the source), the maximum value of the drain-to-source current is _____________.

  1. $40 \; \text{mA}$
  2. $20 \; \text{mA}$
  3. $15 \; \text{mA}$
  4. $5 \; \text{mA}$
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