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An ideal $\text{MOS}$ capacitor (p-type semiconductor) is shown in the figure. The $\text{MOS}$ capacitor is under strong inversion with $V_{G} = 2 \; \text{V}.$ The corresponding inversion charge density $(Q_{IN})$ is $2.2 \; \mu \text{C /cm}^{2}.$ Assume oxide capacitance per unit area as $C_{\text{ox}} = 1.7 \; \mu \text{F/cm}^{2}.$ For $V_{G} = 4 \; \text{V},$ the value of $Q_{IN}$ is ______________ $\mu \text{C/cm}^{2}$ (rounded off to one decimal place).