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A silicon sample is uniformly doped with $10^{16}$ phosphorous atoms $/ \mathrm{cm}^3$ and $2 \times 10^{16}$ boron atoms $/ \mathrm{cm}^3$. If all the dopants are fully ionized, the material is

- $\mathrm{n}$-type with carrier concentration of $10^{16} / \mathrm{cm}^3$
- $p$-type with carrier concentration of $10^{16} / \mathrm{cm}^3$
- $p$-type with carrier concentration of $2 \times 10^{16} / \mathrm{cm}^3$
- $T_2$ will get damaged and $T_1$ will be safe