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GATE ECE 2009 | Question-57


Statement for Linked Answer Questions 57 and 58 :

Consider the CMOS circuit shown, where the gate voltage $V_{G}$ of the n-MOSFET is increased from zero, while the gate voltage of the p-MOSFET is kept constant at $3 \mathrm{~V}$. Assume that, for both transistors, the magnitude of the threshold voltage is $1 \mathrm{~V}$ and the product of the transconductance parameter and the (W/L) ratio, i.e. the quantity $\mu C_{o r}(\mathrm{~W} / \mathrm{L})$, is $1 \mathrm{~mA} \cdot \mathrm{V}^{-2}$.



For small increase in $V_{G}$ beyond $1 \mathrm{~V}$, which of the following gives the correct description of the region of operation of each MOSFET ?

  1. Both the MOSFETs are in saturation region
  2. Both the MOSFETs are in triode region
  3. n-MOSFET is in triode and p-MOSFET is in saturation region
  4. n-MOSFET is in saturation and p-MOSFET is in triode region
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