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GATE ECE 2009 | Question-52

Common Data for Questions 51 and 52:

Consider a silicon $\mathrm{p-n}$ junction at room temperature having the following parameters:
Doping on the $\mathrm{n}$-side $=1 \times 10^{17} \mathrm{~cm}^{-3}$
Depletion width on the $\mathrm{n}$-side $=0.1 \; \mu \mathrm{m}$
Depletion width on the $\mathrm{p}$-side $=1.0 \; \mu \mathrm{m}$
Intrinsic carrier concentration $=1.4 \times 10^{10} \mathrm{~cm}^{-3}$
Thermal voltage $=26 \; \mathrm{mV}$
Permittivity of free space $=8.85 \times 10^{-14} \mathrm{~F} \cdot \mathrm{cm}^{-1}$
Dielectric constant of silicon $=12$

The peak electric field in the device is

  1. $0.15 \mathrm{MV} \cdot \mathrm{cm}^{-1}$, directed from $\mathrm{p}$-region to $\mathrm{n}$-region
  2. $0.15 \mathrm{MV} \cdot \mathrm{cm}^{-1}$, directed from $\mathrm{n}$-region to $\mathrm{p}$-region
  3. $1.80 \mathrm{MV} \cdot \mathrm{cm}^{-1}$, directed from $\mathrm{p}$-region to $\mathrm{n}$-region
  4. $1.80 \mathrm{MV} \cdot \mathrm{cm}^{-1}$, directed from $\mathrm{n}$-region to $\mathrm{p}$-region
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