Consider a silicon $\mathrm{p-n}$ junction at room temperature having the following parameters:
Doping on the $\mathrm{n}$-side $=1 \times 10^{17} \mathrm{~cm}^{-3}$
Depletion width on the $\mathrm{n}$-side $=0.1 \; \mu \mathrm{m}$
Depletion width on the $\mathrm{p}$-side $=1.0 \; \mu \mathrm{m}$
Intrinsic carrier concentration $=1.4 \times 10^{10} \mathrm{~cm}^{-3}$
Thermal voltage $=26 \; \mathrm{mV}$
Permittivity of free space $=8.85 \times 10^{-14} \mathrm{~F} \cdot \mathrm{cm}^{-1}$
Dielectric constant of silicon $=12$
The peak electric field in the device is
- $0.15 \mathrm{~MV} \cdot \mathrm{cm}^{-1}$, directed from $\mathrm{p}$-region to $\mathrm{n}$-region
- $0.15 \mathrm{~MV} \cdot \mathrm{cm}^{-1}$, directed from $\mathrm{n}$-region to $\mathrm{p}$-region
- $1.80 \mathrm{~MV} \cdot \mathrm{cm}^{-1}$, directed from $\mathrm{p}$-region to $\mathrm{n}$-region
- $1.80 \mathrm{~MV} \cdot \mathrm{cm}^{-1}$, directed from $\mathrm{n}$-region to $\mathrm{p}$-region