in Others edited by
6 views
0 votes
0 votes

GATE ECE 2009 | Question-51

Common Data for Questions 51 and 52:

Consider a silicon $p-n$ junction at room temperature having the following parameters:
Doping on the $n$-side $=1 \times 10^{17} \mathrm{~cm}^{-3}$
Depletion width on the $\mathrm{n}$-side $=0.1 \; \mu \mathrm{m}$
Depletion width on the $\mathrm{p}$-side $=1.0 \; \mu \mathrm{m}$
Intrinsic carrier concentration $=1.4 \times 10^{10} \mathrm{~cm}^{-3}$
Thermal voltage $=26 \; \mathrm{mV}$
Permittivity of free space $=8.85 \times 10^{-14} \mathrm{~F} \cdot \mathrm{cm}^{-1}$
Dielectric constant of silicon $=12$

The built-in potential of the junction

  1. is $0.70 \mathrm{~V}$
  2. is $0.76 \mathrm{~V}$
  3. is $0.82 \mathrm{~V}$
  4. cannot be estimated from the data given
in Others edited by
by
32.7k points
6 views

Please log in or register to answer this question.

Welcome to GO Electronics, where you can ask questions and receive answers from other members of the community.