Consider a silicon $\text{p-n}$ junction at room temperature having the following parameters:
Doping on the $n$-side $=1 \times 10^{17} \mathrm{~cm}^{-3}$
Depletion width on the $\mathrm{n}$-side $=0.1 \; \mu \mathrm{m}$
Depletion width on the $\mathrm{p}$-side $=1.0 \; \mu \mathrm{m}$
Intrinsic carrier concentration $=1.4 \times 10^{10} \mathrm{~cm}^{-3}$
Thermal voltage $=26 \; \mathrm{mV}$
Permittivity of free space $=8.85 \times 10^{-14} \mathrm{~F} \cdot \mathrm{cm}^{-1}$
Dielectric constant of silicon $=12$
The built-in potential of the junction
- is $0.70 \mathrm{~V}$
- is $0.76 \mathrm{~V}$
- is $0.82 \mathrm{~V}$
- cannot be estimated from the data given