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GATE ECE 2007 | Question-35

Group I lists four different semiconductor devices. Match each device in Group I with its characteristic property in Group II.

$$\begin{array}{ll} \textbf{Group I} & \qquad \textbf{Group II} \\ \text{P. BJT} & \text{1. Population inversion} \\ \text{Q. MOS capacitor} & \text{2. Pinch-off voltage} \\ \text{R. LASER diode} & \text{3. Early effect} \\ \text{S. JFET} & \text{4. Flat-band voltage} \end{array}$$

  1. $\text{P-3, Q-1, R-4, S-2}$
  2. $\text{P-1, Q-4, R-3, S-2}$
  3. $\text{P-3, Q-4, R-1, S-2}$
  4. $\text{P-3, Q-2, R-1, S-4}$
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