in Others ago edited ago by
5 views
0 votes
0 votes

GATE ECE 1994 | Question-8

The threshold voltage of an n channel $\text{MOSFET}$ can be increased by

  1. increasing the channel dopant concentration
  2. reducing the channel dopant concentration
  3. reducing the gate-oxide thickness
  4. reducing the channel length
in Others ago edited ago by
by
21.7k points
5 views

Please log in or register to answer this question.

Welcome to GO Electronics, where you can ask questions and receive answers from other members of the community.