A heavily doped $n$-type semiconductor has the following data
- Hole-electron mobility ratio : $0.4$
- Doping concentration : $4.2 \times 10^{8} \; \mathrm{atoms/m}^{3}$
- Intrinsic concentration : $1.5 \times 10^{4} \; \mathrm{atoms/m}^{3}$
The ratio of conductance of the $n$-type semiconductor to that of the intrinsic semiconductor of same material and at the same temperature is given by
- $0.00005$
- $2,000$
- $10,000$
- $20,000$