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GATE ECE 2006 | Question-40

A heavily doped n-type semiconductor has the following data

  • Hole-electron mobility ratio : $0.4$
  • Doping concentration : $4.2 \times 10^{8} \; \mathrm{atoms/m}^{3}$
  • Intrinsic concentration : $1.5 \times 10^{4} \; \mathrm{atoms/m}^{3}$

The ratio of conductance of the $n$-type semiconductor to that of the intrinsic semiconductor of same material and at the same temperature is given by

  1. $0.00005$
  2. $2,000$
  3. $10,000$
  4. $20,000$
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