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A heavily doped n-type semiconductor has the following data

• Hole-electron mobility ratio : $0.4$
• Doping concentration : $4.2 \times 10^{8} \; \mathrm{atoms/m}^{3}$
• Intrinsic concentration : $1.5 \times 10^{4} \; \mathrm{atoms/m}^{3}$

The ratio of conductance of the $n$-type semiconductor to that of the intrinsic semiconductor of same material and at the same temperature is given by

1. $0.00005$
2. $2,000$
3. $10,000$
4. $20,000$