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GATE ECE 2006 | Question-12

An $n$-channel depletion MOSFET has following two points on its $\mathrm{I}_D-\mathrm{V}_{\text {GS}}$ curve

  1. $\text{V}_{\text{Gs}}=0$ at $\text{I}_\text{D}=12 \mathrm{~mA}$ and
  2. $\mathrm{V}_{\mathrm{GS}}=-6$ Volts at $\mathrm{l}_{\mathrm{D}}=0$

Which of the following $\text{Q}$-points will give the highest trans-conductance gain for small signals?

  1. $\mathrm{V}_{\mathrm{GS}}=-6 \; \text{Volts}$
  2. $\mathrm{V}_{\mathrm{Gs}}=-3 \; \text{Volts}$
  3. $\text{V}_{\text {Gs }}=0 \; \text{Volts}$
  4. $\mathrm{V}_{\mathrm{Gs}}=3 \; \text{Volts}$
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