In a bipolar junction transistor if
(A) the current gain increases
(B) the collector break-down voltage increases
(C) the cut-off frequency increases
- the base doping is increased and the base width is reduced
- the base doping is reduced and the base width is increased
- the base doping and the base width are reduced
- the emitter area is increased and the collector area is reduced
- the base doping and the base width are increased