in Electronic Devices recategorized by
29 views
0 votes
0 votes

The source of a silicon ($n_i=10^{10}\:per\:cm^3$) n-channel MOS transistor has an area of $1\:sq\:\mu m$ and a depth of $1\:\mu m$. If the dopant density in the source is $10^{19}/cm^3$, the number of holes in the source region with the above volume is approximately

  1. $10^7$
  2. $100$
  3. $10$
  4. $0$
in Electronic Devices recategorized by
by
15.8k points
29 views

Please log in or register to answer this question.

Answer:
Ask
Welcome to GO Electronics, where you can ask questions and receive answers from other members of the community.