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GATE ECE 1995 | Question-18

The drift velocity of electrons, in silicon

  1. is proportional to the electric field for all values of electric field
  2. is independent of the electric field
  3. increases at low values of electric field and decreases at high values of electric field exhibiting negative differential resistance
  4. increases linearly with electric field at low values of electric field and gradually saturates at higher values of electric field.

     

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