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GATE ECE 2005 | Question-45

A Silicon PN junction diode under reverse bias has depletion region of width $10 \; \mu \mathrm{m}$. The relative permittivity of Silicon,$\varepsilon_{r}=11.7$ and the permittiveity of free space $\varepsilon_{0}=8.85 \times 10^{-12} \mathrm{~F/m}$. The depletion capacitance of the diode per square meter is

  1. $100 \; \mu \mathrm{F}$.
  2. $10 \; \mu \mathrm{F}$.
  3. $1 \; \mu \mathrm{F}$.
  4. $20 \; \mu \mathrm{F}$.
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