Consider the following statements $\mathrm{S} 1$ and $\mathrm{S} 2$.
$\mathrm{S} 1 :$ The threshold voltage $\left(V_{T}\right)$ of a MOS capacitor decreases with increase in gate oxide thickness
$\mathrm{S} 2 :$ The threshold voltage $\left(V_{t}\right)$ of a MOS capacitor decreases with increase in substrate doping concentration
Which one of the following is correct?
- $\mathrm{S} 1$ is FALSE and $\mathrm{S} 2$ is TRUE
- Both $\mathrm{S} 1$ and $\mathrm{S} 2$ are TRUE
- Both $\mathrm{S} 1$ and $\mathrm{S} 2$ are FALSE
- $\mathrm{S} 1$ is TRUE and $\mathrm{S} 2$ is FALSE