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Consider the following statements $\mathrm{S} 1$ and $\mathrm{S} 2$.

$\mathrm{S} 1 :$ The threshold voltage $\left(V_{T}\right)$ of a MOS capacitor decreases with increase in gate oxide thickness
$\mathrm{S} 2 :$ The threshold voltage $\left(V_{t}\right)$ of a MOS capacitor decreases with increase in substrate doping concentration

Which one of the following is correct?

  1. $\mathrm{S} 1$ is FALSE and $\mathrm{S} 2$ is TRUE
  2. Both $\mathrm{S} 1$ and $\mathrm{S} 2$ are TRUE
  3. Both $\mathrm{S} 1$ and $\mathrm{S} 2$ are FALSE
  4. $\mathrm{S} 1$ is TRUE and $\mathrm{S} 2$ is FALSE
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