Electronis Discussion
+1 vote

As shown , a uniformly doped Silicon bar of length $L=0.1\mu m$ with a donor concentration $N_{D}=10^{16}cm^{-3}$ is illuminated at $x=0$ such that electron and hole pairs are generated at the rate of $G_{L}=G_{LO}(1-\frac{x}{L}),0\leq x\leq L$, where $G_{LO}=10^{17}cm^{-3}s{-1}$ . Hole life time is $10^{-4} s $, electronic charge $q=1.6 \times 10{-19}\, C$,hole diffusion coefficient $D_{p}=100 cm^2/s$and low level injection condition prevails.Assuming a linearly decaying steady state excess hole concentration that goes to $0$ at $x=L$, the magnitude of the diffusion current density at $x=L/2$, in $A/cm^{2}$, is ___________.

in Electronic Devices by (2.7k points)
recategorized by

Please log in or register to answer this question.

Welcome to GO Electronics, where you can ask questions and receive answers from other members of the community.
1,042 questions
39 answers
8 comments
42,712 users