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In the circuit shown, the silicon BJT has $\beta = 50$. Assume $V_{BE}= 0.7 \: V$ and $V_{CE(sat)}= 0.2 \: V$. Which one of the following statements is correct?

1. For $R_{C}= 1$ $k$$\Omega, the BJT operates in the saturation region 2. For R_{C}= 3 k$$\Omega$, the BJT operates in the saturation region
3. For $R_{C}= 20$ $k$$\Omega, the BJT operates in the cut-off region 4. For R_{C}= 20 k$$\Omega$, the BJT operates in the linear region

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