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The donor and accepter impurities in an abrupt junction silicon diode are $1\times 10^{16} cm^{-3}$ and $5\times 10^{18}$$cm^{-3}$, respectively. Assume that the intrinsic carrier concentration in silicon $n_{i}= 1.5\times 10^{10}cm^{-3}$ at $300K, \frac{kT}{q}= 26$ $mV$ and the permittivity of silicon $\epsilon _{si}= 1.04\times 10^{-12}F/cm.$ The built-in potential and the depletion width of the diode under thermal equilibrium conditions, respectively, are

  1. $0.7$ $V$ and $1\times 10^{-4} cm$
  2. $0.86$ $V$ and $1\times 10^{-4} cm$
  3. $0.7$ $V$ and $3.3\times 10^{-5} cm$
  4. $0.86$ $V$ and $3.3\times 10^{-5} cm$
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