Electronis Discussion
0 votes

The donor and accepter impurities in an abrupt junction silicon diode are $1\times 10^{16} cm^{-3}$ and $5\times 10^{18}$$cm^{-3}$, respectively. Assume that the intrinsic carrier concentration in silicon $n_{i}= 1.5\times 10^{10}cm^{-3}$ at $300K, \frac{kT}{q}= 26$ $mV$ and the permittivity of silicon $\epsilon _{si}= 1.04\times 10^{-12}F/cm.$ The built-in potential and the depletion width of the diode under thermal equilibrium conditions, respectively, are

  1. $0.7$ $V$ and $1\times 10^{-4} cm$
  2. $0.86$ $V$ and $1\times 10^{-4} cm$
  3. $0.7$ $V$ and $3.3\times 10^{-5} cm$
  4. $0.86$ $V$ and $3.3\times 10^{-5} cm$
in Electronic Devices by (15.8k points)
edited by | 9 views

Please log in or register to answer this question.

Welcome to GO Electronics, where you can ask questions and receive answers from other members of the community.
1,174 questions
78 answers
43,917 users