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A region of negative differential resistance is observed in the current voltage characteristics of a silicon PN junction if

  1. both the P – region and the N – region are heavily doped
  2. the N – region is heavily doped compared to the P – region
  3. the P – region is heavily doped compared to the N – region
  4. an intrinsic silicon region is inserted between the P – region and the N – region
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