GATE ECE 2015 Set 1 | Question: 9

Question

A region of negative differential resistance is observed in the current voltage characteristics of a silicon PN junction if

• A. both the P – region and the N – region are heavily doped
• B. the N – region is heavily doped compared to the P – region
• C. the P – region is heavily doped compared to the N – region
• D. an intrinsic silicon region is inserted between the P – region and the N – region