GATE ECE 2015 Set 3 | Question: 9
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GATE ECE 2015 Set 3 | Question: 9

GATE ECE 2015 Set 3 | Question: 9
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Which one of the following processes is preferred to form the gate dielectric $(SiO_{2})$ of MOSFETs ?

  1.  Sputtering 
  2. Molecular beam epitaxy
  3.  Wet oxidation
  4.  Dry oxidation
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