0 votes 0 votes Which one of the following processes is preferred to form the gate dielectric $(SiO_{2})$ of MOSFETs ? Sputtering Molecular beam epitaxy Wet oxidation Dry oxidation Analog Circuits gate2015-ec-3 analog-circuits mosfet + – Milicevic3306 asked Mar 27, 2018 • recategorized Nov 15, 2020 by soujanyareddy13 Milicevic3306 16.0k points 105 views answer comment Share Follow See all 0 reply Please log in or register to add a comment.