in Electronic Devices retagged by
53 views
0 votes
0 votes
Consider an $n$-channel MOSFET having width $W$, length $L$, electron mobility in the channel $\mu _{n}$ and oxide capacitance per unit area $C_{ox}$. If gate-to-source $V_{GS}=0.7$ V, drain-to-source voltage $V_{DS}=0.1 V$, $\mu _{n}C_{ox}=100 \mu A/V^{2}$, threshold voltage $V_{TH}=0.3V$ and $(W/L)=50$, then the transconductance $g_{m}$ (in mA/V) is __________.
in Electronic Devices retagged by
by
31.3k points
53 views

Please log in or register to answer this question.

Welcome to GO Electronics, where you can ask questions and receive answers from other members of the community.