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Recent questions in Analog Circuits
1
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0
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41
GATE ECE 2015 Set 3 | Question: 40
In the circuit shown, both the enhancement mode NMOS transistors have the following characteristics:$k_{n} ݇ = \mu _{n}C_{ox}(W/L) = 1\:mA/V^{2};V_{TN} = 1V.$ Assume that the channel length modulation parameter $\lambda$ is zero ... supply voltage ܸ$V_{DD}$ (in volts) needed to ensure that transistor $M_{1}$ operates in saturation mode of operation is _______.
In the circuit shown, both the enhancement mode NMOS transistors have the following characteristics:$k_{n} ݇ = \mu _{n}C_{ox}(W/L) = 1\:mA/V^{2};V_{TN} = 1V.$ Assume tha...
Milicevic3306
16.0k
points
96
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Milicevic3306
asked
Mar 27, 2018
Analog Circuits
gate2015-ec-3
numerical-answers
analog-circuits
nmos-transistor
+
–
0
votes
0
answers
42
GATE ECE 2015 Set 3 | Question: 41
In the circuit shown, assume that the diodes $D1$ and $D2$ are ideal. The average value of voltage $V_{ab}\: (\text{in Volts}),$ across terminals $‘a’$ and $‘b’$ is _________.
In the circuit shown, assume that the diodes $D1$ and $D2$ are ideal. The average value of voltage $V_{ab}\: (\text{in Volts}),$ across terminals $‘a’$ and $‘b’$ ...
Milicevic3306
16.0k
points
64
views
Milicevic3306
asked
Mar 27, 2018
Analog Circuits
gate2015-ec-3
numerical-answers
analog-circuits
diodes
+
–
0
votes
0
answers
43
GATE ECE 2015 Set 2 | Question: 8
The $2$-port admittance matrix of the circuit shown is given by $\begin{bmatrix}0.3 &0.2 \\0.2 &0.3 \end{bmatrix}$ $\begin{bmatrix} 15&5 \\5 &15 \end{bmatrix}$ $\begin{bmatrix} 3.33&5 \\5 &3.33 \end{bmatrix}$ $\begin{bmatrix} 0.3&0.4 \\0.4 &0.3 \end{bmatrix}$
The $2$-port admittance matrix of the circuit shown is given by$\begin{bmatrix}0.3 &0.2 \\0.2 &0.3 \end{bmatrix}$$\begin{bmatrix} 15&5 \\5 &15 \end{bmatrix}$$\begin{bmatr...
Milicevic3306
16.0k
points
73
views
Milicevic3306
asked
Mar 27, 2018
Analog Circuits
gate2015-ec-2
analog-circuits
+
–
0
votes
0
answers
44
GATE ECE 2015 Set 2 | Question: 11
If the circuit shown has to function as a clamping circuit, then which one of the following conditions should be satisfied for the sinusoidal signal of period $T?$ $RC \ll T$ $RC = 0.35\: T$ $RC \approx T$ $RC \gg T$
If the circuit shown has to function as a clamping circuit, then which one of the following conditions should be satisfied for the sinusoidal signal of period $T?$$RC \l...
Milicevic3306
16.0k
points
159
views
Milicevic3306
asked
Mar 27, 2018
Analog Circuits
gate2015-ec-2
analog-circuits
clamping-circuits
+
–
0
votes
0
answers
45
GATE ECE 2015 Set 2 | Question: 12
In the circuit shown, $V_{0} = V_{0A}$ for switch $SW$ in position $A$ and $V_{0} = V_{0B}$ for $SW$ in position $B$. Assume that the opamp is ideal. The value of $\dfrac{V_{0B}}{V_{0A}}$ is ___________.
In the circuit shown, $V_{0} = V_{0A}$ for switch $SW$ in position $A$ and $V_{0} = V_{0B}$ for $SW$ in position $B$. Assume that the opamp is ideal. The value of $\dfrac...
Milicevic3306
16.0k
points
75
views
Milicevic3306
asked
Mar 27, 2018
Analog Circuits
gate2015-ec-2
numerical-answers
analog-circuits
op-amps
+
–
0
votes
0
answers
46
GATE ECE 2015 Set 2 | Question: 13
In the bistable circuit shown, the ideal opamp has saturation levels of $\pm\: 5\: V.$ The value of $R_{1} \text{(in}\: k\Omega)$ that gives a hysteresis width of $500\: mV$ is ________.
In the bistable circuit shown, the ideal opamp has saturation levels of $\pm\: 5\: V.$ The value of $R_{1} \text{(in}\: k\Omega)$ that gives a hysteresis width of $500\: ...
Milicevic3306
16.0k
points
128
views
Milicevic3306
asked
Mar 27, 2018
Analog Circuits
gate2015-ec-2
numerical-answers
analog-circuits
op-amps
+
–
0
votes
0
answers
47
GATE ECE 2015 Set 2 | Question: 30
An $LC$ tank circuit consists of an ideal capacitor $C$ connected in parallel with a coil of inductance $L$ having an internal resistance $R.$ The resonant frequency of the tank circuit is $\dfrac{1}{2\pi \sqrt{LC}}$ ... $\dfrac{1}{2\pi \sqrt{LC}}\left(1-R^{2}\dfrac{C}{L}\right)$
An $LC$ tank circuit consists of an ideal capacitor $C$ connected in parallel with a coil of inductance $L$ having an internal resistance $R.$ The resonant frequency of t...
Milicevic3306
16.0k
points
75
views
Milicevic3306
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Mar 27, 2018
Analog Circuits
gate2015-ec-2
analog-circuits
tank-circuits
differential-equations
+
–
0
votes
0
answers
48
GATE ECE 2015 Set 2 | Question: 39
The diode in the circuit given below has $V_{ON} = 0.7\:V$ but is ideal otherwise. The current $(\text{in}\: mA)$ in the $4\: k\Omega$ resistor is _______.
The diode in the circuit given below has $V_{ON} = 0.7\:V$ but is ideal otherwise. The current $(\text{in}\: mA)$ in the $4\: k\Omega$ resistor is _______.
Milicevic3306
16.0k
points
93
views
Milicevic3306
asked
Mar 27, 2018
Analog Circuits
gate2015-ec-2
numerical-answers
analog-circuits
diodes
+
–
0
votes
0
answers
49
GATE ECE 2015 Set 2 | Question: 40
Assuming that the opamp in the circuit shown below is ideal, the output voltage ܸ$V_{o}$ (in volts) is________.
Assuming that the opamp in the circuit shown below is ideal, the output voltage ܸ$V_{o}$ (in volts) is________.
Milicevic3306
16.0k
points
112
views
Milicevic3306
asked
Mar 27, 2018
Analog Circuits
gate2015-ec-2
numerical-answers
analog-circuits
op-amps
+
–
0
votes
0
answers
50
GATE ECE 2015 Set 2 | Question: 41
For the voltage regulator circuit shown, the input voltage $(V_{in})$ is $20 V \pm 20\%$ and the regulated output voltage $(V_{out})$ is $10\: V.$ Assume the opamp to be ideal. For a load $R_L$ drawing $200\: mA,$ the maximum power dissipation in $Q_{1}\:\text{(in Watts)}$ is ________.
For the voltage regulator circuit shown, the input voltage $(V_{in})$ is $20 V \pm 20\%$ and the regulated output voltage $(V_{out})$ is $10\: V.$ Assume the opamp to be ...
Milicevic3306
16.0k
points
68
views
Milicevic3306
asked
Mar 27, 2018
Analog Circuits
gate2015-ec-2
numerical-answers
analog-circuits
op-amps
+
–
0
votes
0
answers
51
GATE ECE 2015 Set 2 | Question: 42
In the ac equivalent circuit shown, the two BJTs are biased in active region and have identical parameters with $\beta \gg 1$. The open circuit small signal voltage gain is approximately _______.
In the ac equivalent circuit shown, the two BJTs are biased in active region and have identical parameters with $\beta \gg 1$. The open circuit small signal voltage gain ...
Milicevic3306
16.0k
points
143
views
Milicevic3306
asked
Mar 27, 2018
Analog Circuits
gate2015-ec-2
numerical-answers
analog-circuits
bipolar-junction-transistor
+
–
0
votes
0
answers
52
GATE ECE 2015 Set 1 | Question: 11
For the circuit with ideal diodes shown in the figure, the shape of the output $v_{\text{out}}$ for the given sine wave input $v_{\text{in}}$ will be
For the circuit with ideal diodes shown in the figure, the shape of the output $v_{\text{out}}$ for the given sine wave input $v_{\text{in}}$ will be
Milicevic3306
16.0k
points
104
views
Milicevic3306
asked
Mar 27, 2018
Analog Circuits
gate2015-ec-1
analog-circuits
diodes
+
–
0
votes
0
answers
53
GATE ECE 2015 Set 1 | Question: 34
A MOSFET in saturation has a drain current of $1$ mA for $V_{DS} =0.5 \: V$. If the channel length modulation coefficient is $0.05 \: V^{-1}$, the output resistance (in $k \Omega$) of the MOSFET is ___________.
A MOSFET in saturation has a drain current of $1$ mA for $V_{DS} =0.5 \: V$. If the channel length modulation coefficient is $0.05 \: V^{-1}$, the output resistance (in $...
Milicevic3306
16.0k
points
69
views
Milicevic3306
asked
Mar 27, 2018
Analog Circuits
gate2015-ec-1
numerical-answers
analog-circuits
mosfet
+
–
0
votes
0
answers
54
GATE ECE 2015 Set 1 | Question: 39
For the NMOSFET in the circuit shown, the threshold voltage is $V_{th}$, where $V_{th}>0$. The source voltage $V_{SS}$ is varied from $0$ to $V_{DD}$. Neglecting the channel length modulation, the drain current $I_D$ as a function of $V_{SS}$ is represented by
For the NMOSFET in the circuit shown, the threshold voltage is $V_{th}$, where $V_{th}>0$. The source voltage $V_{SS}$ is varied from $0$ to $V_{DD}$. Neglecting the chan...
Milicevic3306
16.0k
points
61
views
Milicevic3306
asked
Mar 27, 2018
Analog Circuits
gate2015-ec-1
analog-circuits
mosfet
+
–
0
votes
0
answers
55
GATE ECE 2015 Set 1 | Question: 40
In the circuit shown, assume that the opamp is ideal. The bridge output voltage $V_0$ (in mV) for $\delta=0.05$ is __________
In the circuit shown, assume that the opamp is ideal. The bridge output voltage $V_0$ (in mV) for $\delta=0.05$ is __________
Milicevic3306
16.0k
points
59
views
Milicevic3306
asked
Mar 27, 2018
Analog Circuits
gate2015-ec-1
numerical-answers
analog-circuits
op-amps
+
–
0
votes
0
answers
56
GATE ECE 2015 Set 1 | Question: 41
The circuit shown in the figure has an ideal opamp. The oscillation frequency and the condition to sustain the oscillations, respectively, are $\frac{1}{CR}$ and $R_1=R_2 \\ $ $\frac{1}{CR}$ and $R_1=4R_2 \\ $ $\frac{1}{2CR}$ and $R_1=R_2 \\ $ $\frac{1}{2CR}$ and $R_1=4R_2 $
The circuit shown in the figure has an ideal opamp. The oscillation frequency and the condition to sustain the oscillations, respectively, are$\frac{1}{CR}$ and $R_1=R_2 ...
Milicevic3306
16.0k
points
147
views
Milicevic3306
asked
Mar 27, 2018
Analog Circuits
gate2015-ec-1
analog-circuits
op-amps
+
–
0
votes
0
answers
57
GATE ECE 2015 Set 1 | Question: 42
In the circuit shown, $I_1=80$ mA and $I_2=4$ mA. Transistors $T_1$ and $T_2$ are identical. Assume that the thermal voltage $V_T$ is $26$ mV at $27^{\circ}C$. At $50^{\circ}C$, the value of the voltage $V_{12}=V_1 - V_2$ (in mV) is _______.
In the circuit shown, $I_1=80$ mA and $I_2=4$ mA. Transistors $T_1$ and $T_2$ are identical. Assume that the thermal voltage $V_T$ is $26$ mV at $27^{\circ}C$. At $50^{\c...
Milicevic3306
16.0k
points
126
views
Milicevic3306
asked
Mar 27, 2018
Diode Circuits
gate2015-ec-1
numerical-answers
+
–
0
votes
0
answers
58
GATE ECE 2014 Set 4 | Question: 6
The circuit shown in the figure represents a voltage controlled voltage source voltage controlled current source current controlled current source current controlled voltage source
The circuit shown in the figure represents avoltage controlled voltage sourcevoltage controlled current sourcecurrent controlled current sourcecurrent controlled voltage ...
Milicevic3306
16.0k
points
77
views
Milicevic3306
asked
Mar 26, 2018
Analog Circuits
gate2014-ec-4
analog-circuits
+
–
0
votes
0
answers
59
GATE ECE 2014 Set 4 | Question: 13
The circuit shown represents a bandpass filter a voltage controlled oscillator an amplitude modulator a monostable multivibrator
The circuit shown representsa bandpass filtera voltage controlled oscillatoran amplitude modulatora monostable multivibrator
Milicevic3306
16.0k
points
107
views
Milicevic3306
asked
Mar 26, 2018
Analog Circuits
gate2014-ec-4
analog-circuits
oscillator
+
–
0
votes
0
answers
60
GATE ECE 2014 Set 4 | Question: 35
Consider two BJTs biased at the same collector current with area $A_1=0.2 \mu m \times 0.2 \mu m$ and $A_2 = 300 \mu m \times 300 \mu m$. Assuming that all other device parameters are identical, $kT/q=26 \: mV$, the intrinsic carrier concentration ... $V_{BE1}-V_{BE2})$ is ________.
Consider two BJTs biased at the same collector current with area $A_1=0.2 \mu m \times 0.2 \mu m$ and $A_2 = 300 \mu m \times 300 \mu m$. Assuming that all other device p...
Milicevic3306
16.0k
points
117
views
Milicevic3306
asked
Mar 26, 2018
Analog Circuits
gate2014-ec-4
numerical-answers
analog-circuits
bipolar-junction-transistor
+
–
0
votes
0
answers
61
GATE ECE 2014 Set 4 | Question: 37
Consider the common-collector amplifier in the figure (bias circuitry ensures that the transistor operates in forward active region, but has been omitted for simplicity). Let $I_C$ be the collector current, $V_{BE}$ be the base-emitter voltage and $V_T$ be the ... of values of $R_E$? $g_mR_E <<1$ $I_CR_E>>V_T$ $g_mr_o>>1$ $V_{BE}>>V_T$
Consider the common-collector amplifier in the figure (bias circuitry ensures that the transistor operates in forward active region, but has been omitted for simplicity)....
Milicevic3306
16.0k
points
166
views
Milicevic3306
asked
Mar 26, 2018
Analog Circuits
gate2014-ec-4
analog-circuits
amplifier
+
–
0
votes
0
answers
62
GATE ECE 2014 Set 4 | Question: 38
A BJT in a common-base configuration is used to amplify a signal received by a $50 \Omega$ antenna. Assume $kT/q=25 \: mV$. The value of the collector bias current (in mA) required to match the input impedance of the amplifier to the impedance of the antenna is __________.
A BJT in a common-base configuration is used to amplify a signal received by a $50 \Omega$ antenna. Assume $kT/q=25 \: mV$. The value of the collector bias current (in mA...
Milicevic3306
16.0k
points
92
views
Milicevic3306
asked
Mar 26, 2018
Analog Circuits
gate2014-ec-4
numerical-answers
bjt-and-mosfet-amplifiers
analog-circuits
+
–
0
votes
0
answers
63
GATE ECE 2014 Set 4 | Question: 39
For the common collector amplifier shown in the figure, the BJT has high $\beta$, negligible $V_{CE(sat)}$, and $V_{BE}=0.7 \: V$. The maximum undistorted peak-to-peak output voltage $v_o$ (in Volts) is __________
For the common collector amplifier shown in the figure, the BJT has high $\beta$, negligible $V_{CE(sat)}$, and $V_{BE}=0.7 \: V$. The maximum undistorted peak-to-peak ou...
Milicevic3306
16.0k
points
148
views
Milicevic3306
asked
Mar 26, 2018
Analog Circuits
gate2014-ec-4
numerical-answers
bjt-and-mosfet-amplifiers
analog-circuits
+
–
0
votes
0
answers
64
GATE ECE 2014 Set 3 | Question: 11
The desirable characteristics of a transconductance amplifier are high input resistance and high output resistance high input resistance and low output resistance low input resistance and high output resistance low input resistance and low output resistance
The desirable characteristics of a transconductance amplifier are high input resistance and high output resistancehigh input resistance and low output resistancelow input...
Milicevic3306
16.0k
points
101
views
Milicevic3306
asked
Mar 26, 2018
Analog Circuits
gate2014-ec-3
amplifier
analog-circuits
+
–
0
votes
0
answers
65
GATE ECE 2014 Set 3 | Question: 13
The figure shows a half-wave rectifier. The diode $D$ is ideal. The average steady-state current (in Amperes) through the diode is approximately ___________.
The figure shows a half-wave rectifier. The diode $D$ is ideal. The average steady-state current (in Amperes) through the diode is approximately ___________.
Milicevic3306
16.0k
points
335
views
Milicevic3306
asked
Mar 26, 2018
Analog Circuits
gate2014-ec-3
numerical-answers
analog-circuits
diodes
+
–
0
votes
0
answers
66
GATE ECE 2014 Set 3 | Question: 14
An analog voltage in the range $0$ to $8$ V is divided in $16$ equal intervals for conversion to $4$-bit digital output. The maximum quantization error (in V) is __________
An analog voltage in the range $0$ to $8$ V is divided in $16$ equal intervals for conversion to $4$-bit digital output. The maximum quantization error (in V) is ________...
Milicevic3306
16.0k
points
186
views
Milicevic3306
asked
Mar 26, 2018
Analog Circuits
gate2014-ec-3
numerical-answers
analog-circuits
voltage-reference-circuits
+
–
0
votes
0
answers
67
GATE ECE 2014 Set 3 | Question: 37
In the circuit shown, the silicon BJT has $\beta = 50$. Assume $V_{BE}= 0.7 \: V$ and $V_{CE(sat)}= 0.2 \: V$. Which one of the following statements is correct? For $R_{C}= 1$ $k$\Omega$, the BJT operates in the saturation region For $R_{ ... $k$\Omega$, the BJT operates in the cut-off region For $R_{C}= 20$ $k$\Omega$, the BJT operates in the linear region
In the circuit shown, the silicon BJT has $\beta = 50$. Assume $V_{BE}= 0.7 \: V$ and $V_{CE(sat)}= 0.2 \: V$. Which one of the following statements is correct? ...
Milicevic3306
16.0k
points
92
views
Milicevic3306
asked
Mar 26, 2018
Analog Circuits
gate2014-ec-3
bipolar-junction-transistor
analog-circuits
+
–
0
votes
0
answers
68
GATE ECE 2014 Set 3 | Question: 38
Assuming that the Op-amp in the circuit shown is ideal, $V_{o}$ is given by $\frac{5}{2}V_{1}-3V_{2} \\$ $2V_{1}-\frac{5}{2}V_{2} \\$ $-\frac{3}{2}V_{1}+\frac{7}{2}V_{2} \\$ $-3V_{1}+\frac{11}{2}V_{2}$
Assuming that the Op-amp in the circuit shown is ideal, $V_{o}$ is given by $\frac{5}{2}V_{1}-3V_{2} \\$$2V_{1}-\frac{...
Milicevic3306
16.0k
points
95
views
Milicevic3306
asked
Mar 26, 2018
Analog Circuits
gate2014-ec-3
analog-circuits
op-amps
+
–
0
votes
0
answers
69
GATE ECE 2014 Set 2 | Question: 9
An increase in the base recombination of a BJT will increase the common emitter dc current gain $\beta$ the breakdown voltage $BV_{CEO}$ the unity-gain cut-off frequency $f_{T}$ the transconductance $g_{m}$
An increase in the base recombination of a BJT will increasethe common emitter dc current gain $\beta$the breakdown voltage $BV_{CEO}$the unity-gain cut-off frequency $f_...
Milicevic3306
16.0k
points
129
views
Milicevic3306
asked
Mar 26, 2018
Analog Circuits
gate2014-ec-2
analog-circuits
bipolar-junction-transistor
+
–
0
votes
0
answers
70
GATE ECE 2014 Set 2 | Question: 11
The feedback topology in the amplifier circuit ( the base bias circuit is not shown for simplicity) in the figure is voltage shunt feedback current series feedback current shunt feedback voltage series feedback
The feedback topology in the amplifier circuit ( the base bias circuit is not shown for simplicity) in the figure is ...
Milicevic3306
16.0k
points
72
views
Milicevic3306
asked
Mar 26, 2018
Analog Circuits
gate2014-ec-2
analog-circuits
control-systems
+
–
0
votes
0
answers
71
GATE ECE 2014 Set 2 | Question: 12
In the differential amplifier shown in the figure, the magnitude of the common-mode and differential-mode gains are $A_{CM}$ and $A_{d},$ respectively. If the resistance $R_{E}$ is increased, then $A_{cm}$ increases common-mode rejection ratio increases $A_{d}$ increases common-mode rejection ratio decreases
In the differential amplifier shown in the figure, the magnitude of the common-mode and differential-mode gains are $A_{CM}$ and $A_{d},$ respectively. If the resistance ...
Milicevic3306
16.0k
points
130
views
Milicevic3306
asked
Mar 26, 2018
Analog Circuits
gate2014-ec-2
analog-circuits
amplifier
+
–
0
votes
0
answers
72
GATE ECE 2014 Set 2 | Question: 37
The diode in the circuit shown has $V_{on}$= 0.7$ Volts but is ideal otherwise. If $V_{i}= 5 \sin ( \omega t )$Volts, the minimum and maximum values of $V_{o}$ (in Volts ) are, respectively, $-5$ and $2.7$ $2.7$ and $5$ $-5$ and $3.85$ $1.3$ and $5$
The diode in the circuit shown has $V_{on}$$= 0.7$ Volts but is ideal otherwise. If $V_{i}= 5 \sin ( \omega t )$Volts, the minimum and maximum values of $V_{o}$ (in Volts...
Milicevic3306
16.0k
points
65
views
Milicevic3306
asked
Mar 26, 2018
Analog Circuits
gate2014-ec-2
analog-circuits
+
–
0
votes
0
answers
73
GATE ECE 2014 Set 2 | Question: 39
For the MOSFETs shown in the figure, the threshold voltage $\mid V_{t} \mid= 2$ V and $K= \frac{1}{2}\mu C_{ox} ( \frac{W}{L} ) = 0.1 \: mA/V^{2}$. The value of $I_{D}$ (in mA) is _______________ .
For the MOSFETs shown in the figure, the threshold voltage $\mid V_{t} \mid= 2$ V and $K= \frac{1}{2}\mu C_{ox} ( \frac{W}{L} ) = 0.1 \: mA/V^{2}$. The value of $I_{D}$ ...
Milicevic3306
16.0k
points
80
views
Milicevic3306
asked
Mar 26, 2018
Analog Circuits
gate2014-ec-2
numerical-answers
analog-circuits
mosfet
+
–
0
votes
0
answers
74
GATE ECE 2014 Set 1 | Question: 10
If fixed positive charges are present in the gate oxide of an $n$-channel enhancement type MOSFET, it will lead to a decrease in the threshold voltage channel length modulation an increase in substrate leakage current an increase in accumulation capacitance
If fixed positive charges are present in the gate oxide of an $n$-channel enhancement type MOSFET, it will lead to a decrease in the threshold voltagechannel length modul...
Milicevic3306
16.0k
points
142
views
Milicevic3306
asked
Mar 25, 2018
Analog Circuits
gate2014-ec-1
analog-circuits
mosfet
+
–
0
votes
0
answers
75
GATE ECE 2014 Set 1 | Question: 12
In the ac equivalent circuit shown in the figure, if $i_{in}$ is the input current and $R_{F}$ is very large, the type of feedback is voltage-voltage feedback voltage-current feedback current-voltage feedback current-current feedback
In the ac equivalent circuit shown in the figure, if $i_{in}$ is the input current and $R_{F}$ is very large, the type of feedback isvoltage-voltage feedbackvoltage-curre...
Milicevic3306
16.0k
points
149
views
Milicevic3306
asked
Mar 25, 2018
Analog Circuits
gate2014-ec-1
analog-circuits
control-systems
+
–
0
votes
0
answers
76
GATE ECE 2014 Set 1 | Question: 13
In the low-pass filter shown in the figure, for a cut-off frequency of $5\:kHz,$ the value of $R_{2}\:(\text{in}\:k\Omega)$ is ______.
In the low-pass filter shown in the figure, for a cut-off frequency of $5\:kHz,$ the value of $R_{2}\:(\text{in}\:k\Omega)$ is ______.
Milicevic3306
16.0k
points
118
views
Milicevic3306
asked
Mar 25, 2018
Analog Circuits
gate2014-ec-1
numerical-answers
analog-circuits
low-pass-filters
+
–
0
votes
0
answers
77
GATE ECE 2014 Set 1 | Question: 14
In the following circuit employing pass transistor logic, all NMOS transistors are identical with a threshold voltage of $1\: V.$ Ignoring the body-effect, the output voltage at $P,Q$ and $R$ are, $4\: V, 3\:V,2\:V$ $5\: V, 5\:V,5\:V$ $4\: V, 4\:V,4\:V$ $5\: V, 4\:V,3\:V$
In the following circuit employing pass transistor logic, all NMOS transistors are identical with a threshold voltage of $1\: V.$ Ignoring the body-effect, the output vol...
Milicevic3306
16.0k
points
180
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Milicevic3306
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Analog Circuits
gate2014-ec-1
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GATE ECE 2014 Set 1 | Question: 32
A periodic variable $x$ is shown in the figure as a function of time. The root-mean-square (rms) value of $x$ is _______.
A periodic variable $x$ is shown in the figure as a function of time. The root-mean-square (rms) value of $x$ is _______.
Milicevic3306
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Milicevic3306
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Analog Circuits
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numerical-answers
analog-circuits
rms
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GATE ECE 2014 Set 1 | Question: 34
A BJT is biased in forward active mode. Assume $V_{EE} = 0.7\:V, \: kT/q = 25\:mV$ and reverse saturation current $I_{S} = 10^{-13}\:A.$ The transconductance of the BJT (in $mA/V$) is __________
A BJT is biased in forward active mode. Assume $V_{EE} = 0.7\:V, \: kT/q = 25\:mV$ and reverse saturation current $I_{S} = 10^{-13}\:A.$ The transconductance of the BJT ...
Milicevic3306
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Milicevic3306
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Analog Circuits
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numerical-answers
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analog-circuits
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80
GATE ECE 2014 Set 1 | Question: 36
A depletion type $N$-channel MOSFET is biased in its linear region for use as a voltage controlled resistor. Assume threshold voltage $V_{TH} = -0.5\:V,V_{GS} = 2.0\:V,V_{DS} = 5\:V,\:W/L = 100,C_{ox} = 10^{-8}\:F/cm^{2}$ and $\mu_{n} = 800\:cm^{2}/V$-$s.$ The value of the resistance of the voltage controlled resistor (in $\Omega)$ is _______.
A depletion type $N$-channel MOSFET is biased in its linear region for use as a voltage controlled resistor. Assume threshold voltage $V_{TH} = -0.5\:V,V_{GS} = 2.0\:V,V_...
Milicevic3306
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Milicevic3306
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Analog Circuits
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mosfet
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