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1
GATE ECE 2020 | Question: 31
A one-sided abrupt $pn$ junction diode has a depletion capacitance $C_{D}$ of $50$ $\text{pF}$ at a reverse bias of $0.2 V$. The plot of $1/C^{2}_{D}$ versus the applied voltage $V$ for this diode is a straight line as shown in the figure below. The slope of the plot is ___________ $\times 10^{20}F^{-2}V^{-1}$. $-5.7$ $-3.8$ $-1.2$ $-0.4$
A one-sided abrupt $pn$ junction diode has a depletion capacitance $C_{D}$ of $50$ $\text{pF}$ at a reverse bias of $0.2 V$. The plot of $1/C^{2}_{D}$ versus the applied ...
go_editor
1.9k
points
265
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go_editor
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Feb 13, 2020
Electronic Devices
gate2020-ec
electronic-devices
p-n-junction-diode
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2
GATE ECE 2020 | Question: 7
Consider the recombination process via bulk traps in a forward biased $pn$ homojunction diode. The maximum recombination rate is $U_{\text{max}}$ ... bias. With all other parameters unchanged, $U_{\text{max}}$ increases if the thermal velocity of the carriers increases.
Consider the recombination process via bulk traps in a forward biased $pn$ homojunction diode. The maximum recombination rate is $U_{\text{max}}$. If the electron and the...
go_editor
1.9k
points
215
views
go_editor
asked
Feb 13, 2020
Electronic Devices
gate2020-ec
electronic-devices
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3
GATE ECE 2020 | Question: 36
An enhancement $\text{MOSFET}$ of threshold voltage $3\:V$ is being used in the sample and hold circuit given below. Assume that the substrate of the $\text{MOS}$ device is connected to $-10\:V$. If the input voltage $V_{1}$ lies between $\pm 10\:V,$ the minimum and the maximum ... $\text{10 V and -10 V}$. $\text{13 V and -7 V}$. $\text{10 V and -13 V}$.
An enhancement $\text{MOSFET}$ of threshold voltage $3\:V$ is being used in the sample and hold circuit given below. Assume that the substrate of the $\text{MOS}$ device ...
go_editor
1.9k
points
145
views
go_editor
asked
Feb 13, 2020
Electronic Devices
gate2020-ec
electronic-devices
mosfet
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0
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0
answers
4
GATE ECE 2020 | Question: 34
A $pn$ junction solar cell of area $1.0\:cm^{2}$, illuminated uniformly with $100\:mW\:cm^{-2}$, has the following parameters: Efficiency $= 15\%$, open circuit voltage $= 0.7\:V$, fill factor $= 0.8$, and thickness $=200 \mu m$ ... $0.84\times 10^{19}.$ $5.57\times 10^{19}.$ $1.04\times 10^{19}.$ $83.60\times 10^{19}.$
A $pn$ junction solar cell of area $1.0\:cm^{2}$, illuminated uniformly with $100\:mW\:cm^{-2}$, has the following parameters: Efficiency $= 15\%$, open circuit voltage $...
go_editor
1.9k
points
135
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go_editor
asked
Feb 13, 2020
Electronic Devices
gate2020-ec
electronic-devices
p-n-junction
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0
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5
GATE ECE 2019 | Question: 11
What is the electric flux $\left(\int \vec{E}.d \hat{a}\right)$ through a quarter-cylinder of height $H$ (as shown in the figure) due to an infinitely long line charge along the axis of the cylinder with a charge density of $Q?$ $\frac{HQ}{\varepsilon_{0}}$ $\frac{HQ}{4\varepsilon_{0}}$ $\frac{H\varepsilon_{0}}{4Q}$ $\frac{4H}{Q\varepsilon_{0}}$
What is the electric flux $\left(\int \vec{E}.d \hat{a}\right)$ through a quarter-cylinder of height $H$ (as shown in the figure) due to an infinitely long line charge al...
Arjun
6.6k
points
500
views
Arjun
asked
Feb 12, 2019
Electronic Devices
gate2019-ec
electronic-devices
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0
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answers
6
GATE ECE 2019 | Question: 9
The correct circuit representation of the structure shown in the figure is
The correct circuit representation of the structure shown in the figure is
Arjun
6.6k
points
331
views
Arjun
asked
Feb 12, 2019
Electronic Devices
gate2019-ec
electronic-devices
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0
votes
0
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7
GATE ECE 2019 | Question: 41
The $\text{RC}$ circuit shown below has a variable resistance $R(t)$ given by the following expression: $R(t)=R_{0}\left(1-\frac{t}{T}\right) \text{for} \:\: 0 \leq t < T$ where $R_{0}=1\: \Omega,$ and $C=1\:F.$ ... $t=0$ is $1\: A,$ then the current $I(t)$, in amperes, at time $t=T/2$ is __________ (rounded off to $2$ decimal places).
The $\text{RC}$ circuit shown below has a variable resistance $R(t)$ given by the following expression:$$R(t)=R_{0}\left(1-\frac{t}{T}\right) \text{for} \:\: 0 \leq t < T...
Arjun
6.6k
points
243
views
Arjun
asked
Feb 12, 2019
Electronic Devices
gate2019-ec
numerical-answers
electronic-devices
carrier-transport
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0
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8
GATE ECE 2019 | Question: 13
A standard CMOS inverter is designed with equal rise and fall times $(\beta_{n}=\beta_{p}).$ If the width of the pMOS transistor in the inverter is increased, what would be the effect on the LOW noise margin $NM_{L}$ and the HIGH noise margin $NM_{H}$? ... . $NM_{L}$ decreases and $NM_{H}$ increases. Both $NM_{L}$ and $NM_{H}$ increases. No change in the noise margins.
A standard CMOS inverter is designed with equal rise and fall times $(\beta_{n}=\beta_{p}).$ If the width of the pMOS transistor in the inverter is increased, what would ...
Arjun
6.6k
points
235
views
Arjun
asked
Feb 12, 2019
Electronic Devices
gate2019-ec
electronic-devices
cmos
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0
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0
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9
GATE ECE 2019 | Question: 10
The figure shows the high-frequency C-V curve of a MOS capacitor $(\text{at}\: T=300\: K)$ with $\Phi_{ms}= 0\: V$ and no oxide charges. The flat-band, inversion, and accumulation conditions are represented, respectively, by the points $P,Q,R$ $Q,R,P$ $R,P,Q$ $Q,P,R$
The figure shows the high-frequency C-V curve of a MOS capacitor $(\text{at}\: T=300\: K)$ with $\Phi_{ms}= 0\: V$ and no oxide charges. The flat-band, inversion, and acc...
Arjun
6.6k
points
233
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Arjun
asked
Feb 12, 2019
Electronic Devices
gate2019-ec
electronic-devices
mos-capacitor
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0
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0
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10
GATE ECE 2019 | Question: 49
In an ideal $pn$ junction with an ideality factor of $1$ at $T=300\:K,$ the magnitude of the reverse-bias voltage required to reach $75\%$ of its reverse saturation current, rounded off to $2$ decimal places, is ______ $mV.$ $[k=1.38 \times 10^{-23} JK^{-1}, h=6.625 \times 10^{-34} J-s, q=1.602 \times 10^{-19}C]$
In an ideal $pn$ junction with an ideality factor of $1$ at $T=300\:K,$ the magnitude of the reverse-bias voltage required to reach $75\%$ of its reverse saturation curre...
Arjun
6.6k
points
203
views
Arjun
asked
Feb 12, 2019
Electronic Devices
gate2019-ec
numerical-answers
electronic-devices
p-n-junction
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0
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0
answers
11
GATE ECE 2019 | Question: 8
Which one of the following options describes correctly the equilibrium band diagram at $T=300\:K$ of a Silicon $pnn^{+}\:\:p^{++}$ configuration shown in the figure?
Which one of the following options describes correctly the equilibrium band diagram at $T=300\:K$ of a Silicon $pnn^{+}\:\:p^{++}$ configuration shown in the figure?
Arjun
6.6k
points
186
views
Arjun
asked
Feb 12, 2019
Electronic Devices
gate2019-ec
electronic-devices
silicon
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0
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0
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GATE ECE 2019 | Question: 52
In the circuit shown. $V_{s}$ is a $10\:V$ square wave of period, $T=4\: ms$ with $R=500\: \Omega$ and $C= 10\:\mu F.$ The capacitor is initially uncharged at $t=0,$ and the diode is assumed to be ideal. The voltage across the capacitor $(V_{c})$ at $3\:ms$ is equal to _____ volts (rounded off to one decimal place)
In the circuit shown. $V_{s}$ is a $10\:V$ square wave of period, $T=4\: ms$ with $R=500\: \Omega$ and $C= 10\:\mu F.$ The capacitor is initially uncharged at $t=0,$ and ...
Arjun
6.6k
points
158
views
Arjun
asked
Feb 12, 2019
Electronic Devices
gate2019-ec
numerical-answers
electronic-devices
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0
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13
GATE ECE 2019 | Question: 38
In the circuit shown, the breakdown voltage and the maximum current of the Zener diode are $20\:V$ and $60\:mA$, respectively. The values of $R_{1}$ and $R_{L}$ are $200\: \Omega$ and $1\:k\Omega,$ respectively. What is the range of $V_{i}$ that will maintain the Zener diode in the on' ... $34\: V$ $24\: V$ to $36\: V$ $18\: V$ to $24\: V$ $20\: V$ to $28\: V$
In the circuit shown, the breakdown voltage and the maximum current of the Zener diode are $20\:V$ and $60\:mA$, respectively. The values of $R_{1}$ and $R_{L}$ are $200\...
Arjun
6.6k
points
144
views
Arjun
asked
Feb 12, 2019
Electronic Devices
gate2019-ec
electronic-devices
zener-diode
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0
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0
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GATE ECE 2019 | Question: 35
The quantum efficiency $(\eta)$ and responsivity $(R)$ at wavelength $\lambda \:(\text{in}\: \mu m)$ in a p-i-n photodetector are related by $R= \frac{\eta \times \lambda}{1.24}$ $R= \frac{\lambda}{\eta \times 1.24}$ $R= \frac{1.24 \times\lambda}{\eta}$ $R= \frac{1.24}{\eta \times \lambda}$
The quantum efficiency $(\eta)$ and responsivity $(R)$ at wavelength $\lambda \:(\text{in}\: \mu m)$ in a p-i-n photodetector are related by$R= \frac{\eta \times \lambda}...
Arjun
6.6k
points
126
views
Arjun
asked
Feb 12, 2019
Electronic Devices
gate2019-ec
electronic-devices
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0
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15
GATE ECE 2019 | Question: 50
Consider a long-channel MOSFET with a channel length $1\:\mu m$ and width $10\: \mu m.$ The device parameters are acceptor concentration $N_{A}=5 \times 10^{16}\: cm^{-3},$ electron mobility $\mu_{n}=800\: cm^{2}/V-s,$ ... _______ $mA$ (rounded off to two decimal places.). $[\varepsilon_{0}=8.854 \times 10^{-14}F/cm, \varepsilon_{si} =11.9]$
Consider a long-channel MOSFET with a channel length $1\:\mu m$ and width $10\: \mu m.$ The device parameters are acceptor concentration $N_{A}=5 \times 10^{16}\: cm^{-3}...
Arjun
6.6k
points
119
views
Arjun
asked
Feb 12, 2019
Electronic Devices
gate2019-ec
numerical-answers
electronic-devices
mosfet
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–
0
votes
0
answers
16
GATE ECE 2019 | Question: 36
Two identical copper wires $W1$ and $W2$ placed in parallel as shown in the figure, carry currents $I$ and $2I$, respectively, in opposite directions. If the two wires are separated by a distance of $4r$, then the magnitude of the magnetic field $\overrightarrow{B}$ between the wires at a ... $\frac{5\mu_{0}I}{6\pi r}$ $\frac{\mu_{0}^{2}I^{2}}{2\pi r^{2}}$
Two identical copper wires $W1$ and $W2$ placed in parallel as shown in the figure, carry currents $I$ and $2I$, respectively, in opposite directions. If the two wires ar...
Arjun
6.6k
points
108
views
Arjun
asked
Feb 12, 2019
Electronic Devices
gate2019-ec
electronic-devices
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0
votes
0
answers
17
GATE ECE 2019 | Question: 53
A CMOS inverter, designed to have a mid-point voltage $V_{1}$ equal to half of $V_{dd}.$ as shown in the figure, has the following parameters: $V_{dd}=3V$ $\mu_{n} C_{ox}=100\: \mu A/V^{2}; V_{tn}=0.7\:V $ for $\text{nMOS}$ ... of $\left(\frac{W}{L}\right)_{n}$ to $\left(\frac{W}{L}\right)_{p}$ is equal to _______ (rounded off to $3$ decimal places).
A CMOS inverter, designed to have a mid-point voltage $V_{1}$ equal to half of $V_{dd}.$ as shown in the figure, has the following parameters:$V_{dd}=3V$$\mu_{n} C_{ox}=1...
Arjun
6.6k
points
106
views
Arjun
asked
Feb 12, 2019
Electronic Devices
gate2019-ec
numerical-answers
electronic-devices
cmos
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0
votes
0
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18
GATE ECE 2019 | Question: 54
In the circuit shown, the threshold voltages of the $pMOS\:\: (|V_{tp}|)$ and $nMOS\:\: (V_{tn})$ transistors are both equal to $1\:V.$ All the transistors have the same output resistance $r_{ds}$ of $6\:M\Omega.$ The other ... area. Ignoring the effect of channel length modulation and body bias, the gain of the circuit is ______ (rounded off to $1$ decimal place).
In the circuit shown, the threshold voltages of the $pMOS\:\: (|V_{tp}|)$ and $nMOS\:\: (V_{tn})$ transistors are both equal to $1\:V.$ All the transistors have the same ...
Arjun
6.6k
points
84
views
Arjun
asked
Feb 12, 2019
Electronic Devices
gate2019-ec
numerical-answers
electronic-devices
+
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0
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0
answers
19
GATE ECE 2016 Set 2 | Question: 39
The figure shows a half-wave rectifier with a $475 \: \mu F$ filter capacitor. The load draws a constant current $I_{o}= 1 \: A$ from the rectifier. The figure also shows the input voltage $V_{i}$, the output voltage $V_{C}$ and the peak-to-peak voltage ... an amplitude of $10 \: V$ and a period of $1 \: ms$. The value of the ripple $u$ (in volts) is _________
The figure shows a half-wave rectifier with a $475 \: \mu F$ filter capacitor. The load draws a constant current $I_{o}= 1 \: A$ from the rectifier. The figure also shows...
Milicevic3306
16.0k
points
302
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Milicevic3306
asked
Mar 27, 2018
Electronic Devices
gate2016-ec-2
numerical-answers
electronic-devices
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0
votes
0
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20
GATE ECE 2016 Set 1 | Question: 38
The figure below shows the doping distribution in a $p$-type semiconductor in log scale. The magnitude of the electric field (in $kV/cm$) in the semiconductor due to non uniform doping is _________
The figure below shows the doping distribution in a $p$-type semiconductor in log scale.The magnitude of the electric field (in $kV/cm$) in the semiconductor due to non u...
Milicevic3306
16.0k
points
252
views
Milicevic3306
asked
Mar 27, 2018
Electronic Devices
gate2016-ec-1
numerical-answers
digital-circuits
semiconductor
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0
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0
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21
GATE ECE 2015 Set 1 | Question: 24
Consider a straight, infinitely long, current carrying conductor lying on the z-axis. Which one of the following plots (in linear scale) qualitatively represents the dependence of $H_{\phi}$ on $r$, where $H_{\phi}$ is the magnitude of the azimuthal component of magnetic field outside the conductor and $r$ is the radial distance from the conductor?
Consider a straight, infinitely long, current carrying conductor lying on the z-axis. Which one of the following plots (in linear scale) qualitatively represents the depe...
Milicevic3306
16.0k
points
230
views
Milicevic3306
asked
Mar 27, 2018
Carrier Transport
gate2015-ec-1
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22
GATE ECE 2016 Set 3 | Question: 33
In the figure shown, the current $i$ (in ampere) is _________
In the figure shown, the current $i$ (in ampere) is _________
Milicevic3306
16.0k
points
191
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Milicevic3306
asked
Mar 27, 2018
Electronic Devices
gate2016-ec-3
numerical-answers
electronic-devices
carrier-transport
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0
votes
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23
GATE ECE 2016 Set 2 | Question: 36
Consider avalanche breakdown in a silicon $p^{+}n$ junction. The $n$-region is uniformly doped with a donor density $N_{D}.$ ... $N_{D}\times {V_{BR}}= \text{constant}$ $N_{D}/{V_{BR}}= \text{constant}$
Consider avalanche breakdown in a silicon $p^{+}n$ junction. The $n$-region is uniformly doped with a donor density $N_{D}.$ Assume that breakdown occurs when the magnitu...
Milicevic3306
16.0k
points
169
views
Milicevic3306
asked
Mar 27, 2018
Electronic Devices
gate2016-ec-2
electronic-devices
p-n-junction
+
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0
votes
0
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24
GATE ECE 2016 Set 2 | Question: 37
Consider a region of silicon devoid of electrons and holes, with an ionized donor density of $N_{d}^{+}=10^{17} cm^{-3}.$ The electric field at $x = 0$ is $0\: V/cm$ and the electric field at $x=L$ is $50$ $kV/cm$ in the positive $x$ direction, ... $\epsilon _{r}=11.7$ for silicon, the value of $L$ in $nm$ is ___________
Consider a region of silicon devoid of electrons and holes, with an ionized donor density of $N_{d}^{+}=10^{17} cm^{-3}.$ The electric field at $x = 0$ is $0\: V/cm$ and ...
Milicevic3306
16.0k
points
162
views
Milicevic3306
asked
Mar 27, 2018
Electronic Devices
gate2016-ec-2
numerical-answers
electronic-devices
silicon
+
–
0
votes
0
answers
25
GATE ECE 2016 Set 2 | Question: 16
Transistor geometries in a $CMOS$ inverter have been adjusted to meet the requirement for worst case charge and discharge times for driving a load capacitor $C$. This design is to be converted to that of a $NOR$ circuit in the same ... should not be changed. Widths of $PMOS$ transistors should be unchanged, while widths of $NMOS$ transistors should be halved.
Transistor geometries in a $CMOS$ inverter have been adjusted to meet the requirement for worst case charge and discharge times for driving a load capacitor $C$. This des...
Milicevic3306
16.0k
points
160
views
Milicevic3306
asked
Mar 27, 2018
Electronic Devices
gate2016-ec-2
electronic-devices
cmos
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–
0
votes
0
answers
26
GATE ECE 2015 Set 2 | Question: 35
The energy band diagram and the electron density profile $n(x)$ in a semiconductor are shown in the figures. Assume that $n(x) = 10^{15}e^{\left(\dfrac{q\alpha x}{kT}\right)}\:cm^{-3} ,$ with $\alpha = 0.1\:V/cm$ and $x$ ... $x=0$ is $-4.4\times 10^{-2}$ $-2.2\times 10^{-2}$ $0$ $2.2\times 10^{-2}$
The energy band diagram and the electron density profile $n(x)$ in a semiconductor are shown in the figures. Assume that $n(x) = 10^{15}e^{\left(\dfrac{q\alpha x}{kT}\rig...
Milicevic3306
16.0k
points
158
views
Milicevic3306
asked
Mar 27, 2018
Electronic Devices
gate2015-ec-2
electronic-devices
+
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0
votes
0
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27
GATE ECE 2016 Set 3 | Question: 12
The figure shows the $I-V$ characteristics of a solar cell illuminated uniformly with solar light of power $100\ mW/cm^2$. The solar cell has an area of $3\ cm^2$ and a fill factor of $0.7$. The maximum efficiency (in $\%$) of the device is _______
The figure shows the $I-V$ characteristics of a solar cell illuminated uniformly with solar light of power $100\ mW/cm^2$. The solar cell has an area of $3\ cm^2$ and a ...
Milicevic3306
16.0k
points
143
views
Milicevic3306
asked
Mar 27, 2018
Electronic Devices
gate2016-ec-3
numerical-answers
electronic-devices
+
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0
votes
0
answers
28
GATE ECE 2015 Set 1 | Question: 9
A region of negative differential resistance is observed in the current voltage characteristics of a silicon PN junction if both the P - region and the N - region are heavily doped the N - region is heavily doped compared to the P - region the P ... doped compared to the N - region an intrinsic silicon region is inserted between the P - region and the N - region
A region of negative differential resistance is observed in the current voltage characteristics of a silicon PN junction ifboth the P – region and the N – region are ...
Milicevic3306
16.0k
points
144
views
Milicevic3306
asked
Mar 27, 2018
Electronic Devices
gate2015-ec-1
electronic-devices
p-n-junction
+
–
0
votes
0
answers
29
GATE ECE 2016 Set 3 | Question: 11
The figure shows the band diagram of a Metal Oxide Semiconductor (MOS). The surface region of this MOS is in inversion accumulation depletion flat band
The figure shows the band diagram of a Metal Oxide Semiconductor (MOS). The surface region of this MOS is ininversionaccumulationdepletionflat band
Milicevic3306
16.0k
points
142
views
Milicevic3306
asked
Mar 27, 2018
Electronic Devices
gate2016-ec-3
electronic-devices
+
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0
votes
0
answers
30
GATE ECE 2015 Set 2 | Question: 9
An $n$-type silicon sample is uniformly illuminated with light which generates $10^{20}$ electron-hole pairs per $cm^{3}$ per second. The minority carrier lifetime in the sample is $1\mu s$. In the steady state, the hole concentration in the sample is approximately $10^{x}$, where $x$ is an integer. The value of $x$ is _______.
An $n$-type silicon sample is uniformly illuminated with light which generates $10^{20}$ electron-hole pairs per $cm^{3}$ per second. The minority carrier lifetime in the...
Milicevic3306
16.0k
points
143
views
Milicevic3306
asked
Mar 27, 2018
Electronic Devices
gate2015-ec-2
numerical-answers
electronic-devices
intrinsic-and-extrinsic-silicon
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–
0
votes
0
answers
31
GATE ECE 2016 Set 1 | Question: 42
Identify the circuit below. Binary to Gray code converter Binary to XS3 converter Gray to Binary converter XS3 to Binary converter
Identify the circuit below.Binary to Gray code converterBinary to XS3 converterGray to Binary converterXS3 to Binary converter
Milicevic3306
16.0k
points
140
views
Milicevic3306
asked
Mar 27, 2018
Electronic Devices
gate2016-ec-1
electronic-devices
+
–
0
votes
0
answers
32
GATE ECE 2016 Set 2 | Question: 52
The parallel-plate capacitor shown in the figure has movable plates. The capacitor is charged so that the energy stored in it is $E$ when the plate separation is $d$. The capacitor is then isolated electrically and the plate are moved such that the plate ... , what is the energy stored in the capacitor, neglecting fringing effects? $2E$ $\sqrt{2}E$ $E$ $E/2$
The parallel-plate capacitor shown in the figure has movable plates. The capacitor is charged so that the energy stored in it is $E$ when the plate separation is $d$. The...
Milicevic3306
16.0k
points
137
views
Milicevic3306
asked
Mar 27, 2018
Electronic Devices
gate2016-ec-2
electronic-devices
+
–
0
votes
0
answers
33
GATE ECE 2016 Set 2 | Question: 14
Resistor $R_{1}$ in the circuit below has been adjusted so that $I_{1}=1$ $mA$. The bipolar transistors $Q1$ and $Q2$ are perfectly matched and have very high current gain, so their base currents are negligible. The supply voltage $V_{cc}$ is $6$ $V$. The thermal ... $KT/q$ is $26$ $mV$. The value of $R_{2}$ (in $\Omega)$ for which $I_{2}=100\mu A$ is _________
Resistor $R_{1}$ in the circuit below has been adjusted so that $I_{1}=1$ $mA$. The bipolar transistors $Q1$ and $Q2$ are perfectly matched and have very high current gai...
Milicevic3306
16.0k
points
129
views
Milicevic3306
asked
Mar 27, 2018
Electronic Devices
gate2016-ec-2
numerical-answers
electronic-devices
+
–
0
votes
0
answers
34
GATE ECE 2016 Set 2 | Question: 40
In the opamp circuit shown, the Zener diodes $Z1$ and $Z2$ clamp the output voltage $V_{0}$ to $+5V$ or $-5 V$. The switch $S$ is initially closed and is opened at time $t=0$. The time $t=t_{1}$ (in seconds) at which $V_{0}$ changes state is ________
In the opamp circuit shown, the Zener diodes $Z1$ and $Z2$ clamp the output voltage $V_{0}$ to $+5V$ or $-5 V$. The switch $S$ is initially closed and is opened at time $...
Milicevic3306
16.0k
points
117
views
Milicevic3306
asked
Mar 27, 2018
Electronic Devices
gate2016-ec-2
numerical-answers
electronic-devices
zener-diode
+
–
0
votes
0
answers
35
GATE ECE 2012 | Question: 53
An infinitely long uniform solid wire of radius $a$ carries a uniform dc current of density $\overrightarrow{j}$. A hole of radius $b$ (b < a) ia now drilled along the length of the wire at a distance $d$ from the center of the wire as shown ... uniform and depends only on $d$ uniform and depends only on $b$ uniform and depends only on both $b$ and $d$ non uniform
An infinitely long uniform solid wire of radius $a$ carries a uniform dc current of density $\overrightarrow{j}$.A hole of radius $b$ (b < a) ia now drilled along the len...
Milicevic3306
16.0k
points
222
views
Milicevic3306
asked
Mar 25, 2018
Electronic Devices
gate2012-ec
electronic-devices
carrier-transport
+
–
0
votes
0
answers
36
GATE ECE 2015 Set 3 | Question: 33
The electric field profile in the depletion region of a p-n junction in equilibrium is shown in the figure. Which one of the following statements is NOT TRUE? The left side of the junction is n-type and the right side is p-type Both the n-type and p-type depletion ... $10^{16}\: cm^{-3}$
The electric field profile in the depletion region of a p-n junction in equilibrium is shown in the figure. Which one of the following statements is NOT TRUE?The left sid...
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GATE ECE 2015 Set 1 | Question: 8
In the given circuit, the values of $V_1$ and $V_2$ respectively are $5$ V, $25$ V $10$ V, $30$ V $15$ V, $35$ V $0$ V, $20$ V
In the given circuit, the values of $V_1$ and $V_2$ respectively are$5$ V, $25$ V$10$ V, $30$ V$15$ V, $35$ V$0$ V, $20$ V
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38
GATE ECE 2016 Set 3 | Question: 38
Figures I and II show two MOS capacitors of unit area. The capacitor in Figure I has insulator materials $X$ (of thickness $t_1 = 1$ nm and dielectric constant $\varepsilon_1=4$) and $Y$ (of thickness $t_2 = 3$ ... of thickness $t_{Eq}$. If the capacitors are of equal capacitance, then the value of $t_{Eq}$ (in nm) is _________
Figures I and II show two MOS capacitors of unit area. The capacitor in Figure I has insulator materials $X$ (of thickness $t_1 = 1$ nm and dielectric constant $\varepsil...
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GATE ECE 2016 Set 1 | Question: 13
Consider the constant current source shown in the figure below. Let $\beta$ represent the current gain of the transistor. The load current $I_0$ through $R_L$ is $I_0 = \bigg( \frac{\beta+1}{\beta} \bigg) \frac{V_{ref}}{R}$ ... $I_0 = \bigg (\frac{\beta}{\beta+1} \bigg) \frac{V_{ref}}{2R}$
Consider the constant current source shown in the figure below. Let $\beta$ represent the current gain of the transistor.The load current $I_0$ through $R_L$ is$I_0 = \bi...
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GATE ECE 2016 Set 3 | Question: 39
The $I-V$ characteristics of the zener diodes $D1\:\text{and}\:D2$ are shown in Figure I. These diodes are used in the circuit given in Figure II. If the supply voltage is varied from $0$ to $100$ V,then breakdown occurs in $D1$ only $D2$ only both $D1$ and $D2$ none of $D1$ and $D2$
The $I-V$ characteristics of the zener diodes $D1\:\text{and}\:D2$ are shown in Figure I. These diodes are used in the circuit given in Figure II. If the supply voltage i...
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