Most viewed questions in Electronic Devices / GO Electronics

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GATE ECE 2019 | Question: 11
What is the electric flux $\left(\int \vec{E}.d \hat{a}\right)$ through a quarter-cylinder of height $H$ (as shown in the figure) due to an infinitely long line charge along the axis of the cylinder with a charge density of $Q?$ $\frac{HQ}{\varepsilon_{0}}$ $\frac{HQ}{4\varepsilon_{0}}$ $\frac{H\varepsilon_{0}}{4Q}$ $\frac{4H}{Q\varepsilon_{0}}$

What is the electric flux $\left(\int \vec{E}.d \hat{a}\right)$ through a quarter-cylinder of height $H$ (as shown in the figure) due to an infinitely long line charge al...

Arjun

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GATE ECE 2019 | Question: 9
The correct circuit representation of the structure shown in the figure is

The correct circuit representation of the structure shown in the figure is

Arjun

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Arjun asked Feb 12, 2019

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GATE ECE 2017 Set 1 | Question: 37
As shown , a uniformly doped Silicon bar of length $L=0.1\mu m$ with a donor concentration $N_{D}=10^{16}cm^{-3}$ is illuminated at $x=0$ ... that goes to $0$ at $x=L$, the magnitude of the diffusion current density at $x=L/2$, in $A/cm^{2}$, is ___________.

As shown , a uniformly doped Silicon bar of length $L=0.1\mu m$ with a donor concentration $N_{D}=10^{16}cm^{-3}$ is illuminated at $x=0$ such that electron and hole pair...

admin

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GATE ECE 2016 Set 2 | Question: 39
The figure shows a half-wave rectifier with a $475 \: \mu F$ filter capacitor. The load draws a constant current $I_{o}= 1 \: A$ from the rectifier. The figure also shows the input voltage $V_{i}$, the output voltage $V_{C}$ and the peak-to-peak voltage ... an amplitude of $10 \: V$ and a period of $1 \: ms$. The value of the ripple $u$ (in volts) is _________

The figure shows a half-wave rectifier with a $475 \: \mu F$ filter capacitor. The load draws a constant current $I_{o}= 1 \: A$ from the rectifier. The figure also shows...

Milicevic3306

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GATE ECE 2017 Set 2 | Question: 31
The switch in the circuit, shown in the figure, was open for a long time and is closed at $t=0$. The current $i(t)$ (in ampere) at $t=0.5$ seconds is ____________

The switch in the circuit, shown in the figure, was open for a long time and is closed at $t=0$. The current $i(t)$ (in ampere) at $t=0.5$ seconds is ____________

admin

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GATE ECE 2017 Set 2 | Question: 36
A MOS capacitor is fabricated on $p$-type Si (Silicon) where the metal work function is $4.1$ eV and electron affinity of Si is $4.0$ eV. $E_C-E_F=0.9$ eV, where $E_C$ and $E_F$ are the conduction band minimum and the Fermi energy ... capacitor is $-1$ V, then the magnitude of the fixed charge at the oxide-semiconductor interface, in $nC/cm^2$, is ___________.

A MOS capacitor is fabricated on $p$-type Si (Silicon) where the metal work function is $4.1$ eV and electron affinity of Si is $4.0$ eV. $E_C-E_F=0.9$ eV, where $E_C$ an...

admin

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7

GATE ECE 2020 | Question: 31
A one-sided abrupt $pn$ junction diode has a depletion capacitance $C_{D}$ of $50$ $\text{pF}$ at a reverse bias of $0.2 V$. The plot of $1/C^{2}_{D}$ versus the applied voltage $V$ for this diode is a straight line as shown in the figure below. The slope of the plot is ___________ $\times 10^{20}F^{-2}V^{-1}$. $-5.7$ $-3.8$ $-1.2$ $-0.4$

A one-sided abrupt $pn$ junction diode has a depletion capacitance $C_{D}$ of $50$ $\text{pF}$ at a reverse bias of $0.2 V$. The plot of $1/C^{2}_{D}$ versus the applied ...

go_editor

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go_editor asked Feb 13, 2020

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8

GATE ECE 2017 Set 2 | Question: 39
An abrupt $pn$ junction (located at $x=0$) is uniformly doped on both $p$ and $n$ sides. The width of the depletion region is $W$ and the electric field variation in the $x$-direction is $E(x)$. Which of the following figures represents the electric field profile near the $pn$ junction?

An abrupt $pn$ junction (located at $x=0$) is uniformly doped on both $p$ and $n$ sides. The width of the depletion region is $W$ and the electric field variation in the ...

admin

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9

GATE ECE 2016 Set 1 | Question: 38
The figure below shows the doping distribution in a $p$-type semiconductor in log scale. The magnitude of the electric field (in $kV/cm$) in the semiconductor due to non uniform doping is _________

The figure below shows the doping distribution in a $p$-type semiconductor in log scale.The magnitude of the electric field (in $kV/cm$) in the semiconductor due to non u...

Milicevic3306

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10

GATE ECE 2019 | Question: 41
The $\text{RC}$ circuit shown below has a variable resistance $R(t)$ given by the following expression: $R(t)=R_{0}\left(1-\frac{t}{T}\right) \text{for} \:\: 0 \leq t < T$ where $R_{0}=1\: \Omega,$ and $C=1\:F.$ ... $t=0$ is $1\: A,$ then the current $I(t)$, in amperes, at time $t=T/2$ is __________ (rounded off to $2$ decimal places).

The $\text{RC}$ circuit shown below has a variable resistance $R(t)$ given by the following expression:$$R(t)=R_{0}\left(1-\frac{t}{T}\right) \text{for} \:\: 0 \leq t < T...

Arjun

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Arjun asked Feb 12, 2019

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11

GATE ECE 2019 | Question: 13
A standard CMOS inverter is designed with equal rise and fall times $(\beta_{n}=\beta_{p}).$ If the width of the pMOS transistor in the inverter is increased, what would be the effect on the LOW noise margin $NM_{L}$ and the HIGH noise margin $NM_{H}$? ... . $NM_{L}$ decreases and $NM_{H}$ increases. Both $NM_{L}$ and $NM_{H}$ increases. No change in the noise margins.

A standard CMOS inverter is designed with equal rise and fall times $(\beta_{n}=\beta_{p}).$ If the width of the pMOS transistor in the inverter is increased, what would ...

Arjun

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Arjun asked Feb 12, 2019

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12

GATE ECE 2019 | Question: 10
The figure shows the high-frequency C-V curve of a MOS capacitor $(\text{at}\: T=300\: K)$ with $\Phi_{ms}= 0\: V$ and no oxide charges. The flat-band, inversion, and accumulation conditions are represented, respectively, by the points $P,Q,R$ $Q,R,P$ $R,P,Q$ $Q,P,R$

The figure shows the high-frequency C-V curve of a MOS capacitor $(\text{at}\: T=300\: K)$ with $\Phi_{ms}= 0\: V$ and no oxide charges. The flat-band, inversion, and acc...

Arjun

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13

GATE ECE 2015 Set 1 | Question: 24
Consider a straight, infinitely long, current carrying conductor lying on the z-axis. Which one of the following plots (in linear scale) qualitatively represents the dependence of $H_{\phi}$ on $r$, where $H_{\phi}$ is the magnitude of the azimuthal component of magnetic field outside the conductor and $r$ is the radial distance from the conductor?

Consider a straight, infinitely long, current carrying conductor lying on the z-axis. Which one of the following plots (in linear scale) qualitatively represents the depe...

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14

GATE ECE 2012 | Question: 53
An infinitely long uniform solid wire of radius $a$ carries a uniform dc current of density $\overrightarrow{j}$. A hole of radius $b$ (b < a) ia now drilled along the length of the wire at a distance $d$ from the center of the wire as shown ... uniform and depends only on $d$ uniform and depends only on $b$ uniform and depends only on both $b$ and $d$ non uniform

An infinitely long uniform solid wire of radius $a$ carries a uniform dc current of density $\overrightarrow{j}$.A hole of radius $b$ (b < a) ia now drilled along the len...

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Milicevic3306 asked Mar 25, 2018

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15

GATE ECE 2020 | Question: 7
Consider the recombination process via bulk traps in a forward biased $pn$ homojunction diode. The maximum recombination rate is $U_{\text{max}}$ ... bias. With all other parameters unchanged, $U_{\text{max}}$ increases if the thermal velocity of the carriers increases.

Consider the recombination process via bulk traps in a forward biased $pn$ homojunction diode. The maximum recombination rate is $U_{\text{max}}$. If the electron and the...

go_editor

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go_editor asked Feb 13, 2020

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16

GATE ECE 2017 Set 2 | Question: 53
An electron $(q_1)$ is moving in free space with velocity $10^5$ m/s towards a stationary electron $(q_2)$ far away. The closest distance that this moving electron gets to the stationary electron before the repulsive force diverts its path is ____________$\times 10^{-8}$ ... $e=-1.6\times 10^{-19}$ C, and permittivity $\varepsilon _0=(1/36\pi)\times 10^{-9}$ F/m]

An electron $(q_1)$ is moving in free space with velocity $10^5$ m/s towards a stationary electron $(q_2)$ far away. The closest distance that this moving electron gets t...

admin

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admin asked Nov 25, 2017

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17

GATE ECE 2019 | Question: 49
In an ideal $pn$ junction with an ideality factor of $1$ at $T=300\:K,$ the magnitude of the reverse-bias voltage required to reach $75\%$ of its reverse saturation current, rounded off to $2$ decimal places, is ______ $mV.$ $[k=1.38 \times 10^{-23} JK^{-1}, h=6.625 \times 10^{-34} J-s, q=1.602 \times 10^{-19}C]$

In an ideal $pn$ junction with an ideality factor of $1$ at $T=300\:K,$ the magnitude of the reverse-bias voltage required to reach $75\%$ of its reverse saturation curre...

Arjun

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Arjun asked Feb 12, 2019

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18

GATE ECE 2016 Set 3 | Question: 33
In the figure shown, the current $i$ (in ampere) is _________

In the figure shown, the current $i$ (in ampere) is _________

Milicevic3306

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19

GATE ECE 2019 | Question: 8
Which one of the following options describes correctly the equilibrium band diagram at $T=300\:K$ of a Silicon $pnn^{+}\:\:p^{++}$ configuration shown in the figure?

Which one of the following options describes correctly the equilibrium band diagram at $T=300\:K$ of a Silicon $pnn^{+}\:\:p^{++}$ configuration shown in the figure?

Arjun

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Arjun asked Feb 12, 2019

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20

GATE ECE 2017 Set 1 | Question: 36
The dependence of drift velocity of electrons on electric field in a semiconductor is shown below. The semiconductor has a uniform electron concentration of $n=1 \times 10^{16} cm^{3}$ and electronic charge $q=1.6 \times 10 ^{-19}C$. If a bias ... a $1 µm$ region of this semiconductor, the resulting current density in this region, in $kA/cm^{2} $, is _____.

The dependence of drift velocity of electrons on electric field in a semiconductor is shown below. The semiconductor has a uniform electron concentration of $n=1 \times 1...

admin

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admin asked Nov 17, 2017

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21

GATE ECE 2017 Set 1 | Question: 7
In the circuit shown, the positive angular frequency $\omega$ (in radians per second) at which the magnitude of the phase difference between the voltages $V_1$ and $V_2$ equals $\frac{\pi}{4}$ radians, is _________

In the circuit shown, the positive angular frequency $\omega$ (in radians per second) at which the magnitude of the phase difference between the voltages $V_1$ and $V_2$ ...

admin

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admin asked Nov 17, 2017

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22

GATE ECE 2013 | Question: 50
Consider the following figure The current $I_{S}$ in $\text{Amps}$ in the voltage source, and voltage $V_{S}$ in Volts across the current source respectively, are $13, − 20$ $8, − 10$ $− 8, 20$ $− 13, 20$

Consider the following figure The current $I_{S}$ in $\text{Amps}$ in the voltage source, and voltage $V_{S}$ in Volts across the current source respectively, are$13, −...

Milicevic3306

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Milicevic3306 asked Mar 25, 2018

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23

GATE ECE 2018 | Question: 1
Two identical $\text{nMOS}$ transistors $M_{1}$ and $M_{2}$ are connected as shown below. The circuit is used as an amplifier with the input connected between $\text{G and S}$ terminals and the output taken between $D\: \text{and}\: S$ terminals. $V_{bias}$ and $V_{D}$ are ... $g_{m}\approx g_{m1} \:\:\text{and}\:\: r_{o}\approx r_{o2}$

Two identical $\text{nMOS}$ transistors $M_{1}$ and $M_{2}$ are connected as shown below. The circuit is used as an amplifier with the input connected between $\text{G an...

gatecse

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gatecse asked Feb 19, 2018

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24

GATE ECE 2017 Set 2 | Question: 13
In the figure, $D1$ is a real silicon $pn$ junction diode with a drop of $0.7V$ under forward bias condition and $D2$ is a Zener diode breakdown voltage of $-6.8V$. The input $V_{in}(t)$ is a periodic square wave of period $T$ ... $-20.5 V$ $6.1 V$ and $-21.9 V$ $7.5 V$ and $-21.2 V$ $6.1 V$ and $-22.6 V$

In the figure, $D1$ is a real silicon $pn$ junction diode with a drop of $0.7V$ under forward bias condition and $D2$ is a Zener diode breakdown voltage of $-6.8V$. The i...

admin

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admin asked Nov 23, 2017

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25

GATE ECE 2016 Set 2 | Question: 36
Consider avalanche breakdown in a silicon $p^{+}n$ junction. The $n$-region is uniformly doped with a donor density $N_{D}.$ ... $N_{D}\times {V_{BR}}= \text{constant}$ $N_{D}/{V_{BR}}= \text{constant}$

Consider avalanche breakdown in a silicon $p^{+}n$ junction. The $n$-region is uniformly doped with a donor density $N_{D}.$ Assume that breakdown occurs when the magnitu...

Milicevic3306

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26

GATE ECE 2018 | Question: 2
In the circuit shown below, the op-amp is ideal and Zener voltage of the diode is $2.5\: volts$. At the input, unit step voltage is applied, i.e. $v_{IN}\left ( t \right ) = u\left ( t \right )\:volts$. Also, at $t = 0$, the voltage across each of the ... zero. The time $t$, in milliseconds, at which the output voltage $v_{OUT}$ crosses $-10\: V$ is $2.5$ $5$ $7.5$ $10$

In the circuit shown below, the op-amp is ideal and Zener voltage of the diode is $2.5\: volts$. At the input, unit step voltage is applied, i.e. $v_{IN}\left ( t \right ...

gatecse

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gatecse asked Feb 19, 2018

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27

GATE ECE 2016 Set 2 | Question: 37
Consider a region of silicon devoid of electrons and holes, with an ionized donor density of $N_{d}^{+}=10^{17} cm^{-3}.$ The electric field at $x = 0$ is $0\: V/cm$ and the electric field at $x=L$ is $50$ $kV/cm$ in the positive $x$ direction, ... $\epsilon _{r}=11.7$ for silicon, the value of $L$ in $nm$ is ___________

Consider a region of silicon devoid of electrons and holes, with an ionized donor density of $N_{d}^{+}=10^{17} cm^{-3}.$ The electric field at $x = 0$ is $0\: V/cm$ and ...

Milicevic3306

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28

GATE ECE 2016 Set 2 | Question: 16
Transistor geometries in a $CMOS$ inverter have been adjusted to meet the requirement for worst case charge and discharge times for driving a load capacitor $C$. This design is to be converted to that of a $NOR$ circuit in the same ... should not be changed. Widths of $PMOS$ transistors should be unchanged, while widths of $NMOS$ transistors should be halved.

Transistor geometries in a $CMOS$ inverter have been adjusted to meet the requirement for worst case charge and discharge times for driving a load capacitor $C$. This des...

Milicevic3306

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Milicevic3306 asked Mar 27, 2018

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29

GATE ECE 2019 | Question: 52
In the circuit shown. $V_{s}$ is a $10\:V$ square wave of period, $T=4\: ms$ with $R=500\: \Omega$ and $C= 10\:\mu F.$ The capacitor is initially uncharged at $t=0,$ and the diode is assumed to be ideal. The voltage across the capacitor $(V_{c})$ at $3\:ms$ is equal to _____ volts (rounded off to one decimal place)

In the circuit shown. $V_{s}$ is a $10\:V$ square wave of period, $T=4\: ms$ with $R=500\: \Omega$ and $C= 10\:\mu F.$ The capacitor is initially uncharged at $t=0,$ and ...

Arjun

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Arjun asked Feb 12, 2019

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30

GATE ECE 2015 Set 2 | Question: 35
The energy band diagram and the electron density profile $n(x)$ in a semiconductor are shown in the figures. Assume that $n(x) = 10^{15}e^{\left(\dfrac{q\alpha x}{kT}\right)}\:cm^{-3} ,$ with $\alpha = 0.1\:V/cm$ and $x$ ... $x=0$ is $-4.4\times 10^{-2}$ $-2.2\times 10^{-2}$ $0$ $2.2\times 10^{-2}$

The energy band diagram and the electron density profile $n(x)$ in a semiconductor are shown in the figures. Assume that $n(x) = 10^{15}e^{\left(\dfrac{q\alpha x}{kT}\rig...

Milicevic3306

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31

GATE ECE 2018 | Question: 30
Red (R), Green(G) and Blue (B) Light Emitting Diodes (LEDs) were fabricated using $\text{p-n}$ junctions of three different inorganic semiconductors having different band-gaps. The built-in voltages of red,green and blue diodes are $V_{R}$, $V_{G}$ and $V_{B},$respectively. Assume donor ... $V_{R}<V_{G}<V_{B}$ $V_{R}=V_{G}=V_{B}$ $V_{R}>V_{G}<V_{B}$

Red (R), Green(G) and Blue (B) Light Emitting Diodes (LEDs) were fabricated using $\text{p-n}$ junctions of three different inorganic semiconductors having different band...

gatecse

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gatecse asked Feb 19, 2018

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32

GATE ECE 2018 | Question: 7
In a $\text{p-n}$ junction diode at equilibrium, which one of the following statements is NOT TRUE? The hole and electron diffusion current components are in the same direction. The hole and electron drift current components are in the same ... an average, holes and electrons drift in opposite direction. On an average, electrons drift and diffuse in the same direction.

In a $\text{p-n}$ junction diode at equilibrium, which one of the following statements is NOT TRUE?The hole and electron diffusion current components are in the same dire...

gatecse

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gatecse asked Feb 19, 2018

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33

GATE ECE 2014 Set 3 | Question: 12
In the circuit shown, the $PNP$ transistor has $\mid V_{BE} \mid = 0.7 \:V$ and $\beta = 50$. Assume that $R_{B}= 100 \: k \Omega$. For $V_{0}$ to be $5 \: V$, the value of $R_{C}$ (in $k \Omega$) is ________

In the circuit shown, the $PNP$ transistor has $\mid V_{BE} \mid = 0.7 \:V$ and $\beta = 50$. Assume that $R_{B}= 100 \: k \Omega$. For $V_{0}$ to be $5 \: V$, the value...

Milicevic3306

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Milicevic3306 asked Mar 26, 2018

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34

GATE ECE 2014 Set 1 | Question: 9
In the figure, assume that the forward voltage drops of the $PN$ diode $D_{1}$ and Schottky diode $D_{2}$ are $0.7\: V$ and $0.3\: V,$ ... is ON and $D_{2}$ is OFF both $D_{1}$ and $D_{2}$ are OFF $D_{1}$ is OFF and $D_{2}$ is ON

In the figure, assume that the forward voltage drops of the $PN$ diode $D_{1}$ and Schottky diode $D_{2}$ are $0.7\: V$ and $0.3\: V,$ respectively. If ON denotes conduct...

Milicevic3306

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Milicevic3306 asked Mar 25, 2018

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35

GATE ECE 2020 | Question: 36
An enhancement $\text{MOSFET}$ of threshold voltage $3\:V$ is being used in the sample and hold circuit given below. Assume that the substrate of the $\text{MOS}$ device is connected to $-10\:V$. If the input voltage $V_{1}$ lies between $\pm 10\:V,$ the minimum and the maximum ... $\text{10 V and -10 V}$. $\text{13 V and -7 V}$. $\text{10 V and -13 V}$.

An enhancement $\text{MOSFET}$ of threshold voltage $3\:V$ is being used in the sample and hold circuit given below. Assume that the substrate of the $\text{MOS}$ device ...

go_editor

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go_editor asked Feb 13, 2020

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36

GATE ECE 2015 Set 1 | Question: 9
A region of negative differential resistance is observed in the current voltage characteristics of a silicon PN junction if both the P - region and the N - region are heavily doped the N - region is heavily doped compared to the P - region the P ... doped compared to the N - region an intrinsic silicon region is inserted between the P - region and the N - region

A region of negative differential resistance is observed in the current voltage characteristics of a silicon PN junction ifboth the P – region and the N – region are ...

Milicevic3306

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37

GATE ECE 2018 | Question: 44
A solar cell of area $1.0\:cm^{2},$ operating at $1.0$ sun intensity, has a short circuit current of $20\: mA$, and an open circuit voltage of $0.65\: V$. Assuming room temperature operation and thermal equivalent voltage of $26\: mV$, the open circuit voltage (in volts, correct to two decimal places) at $0.2$ sun intensity is _________.

A solar cell of area $1.0\:cm^{2},$ operating at $1.0$ sun intensity, has a short circuit current of $20\: mA$, and an open circuit voltage of $0.65\: V$. Assuming room t...

gatecse

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gatecse asked Feb 19, 2018

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38

GATE ECE 2019 | Question: 38
In the circuit shown, the breakdown voltage and the maximum current of the Zener diode are $20\:V$ and $60\:mA$, respectively. The values of $R_{1}$ and $R_{L}$ are $200\: \Omega$ and $1\:k\Omega,$ respectively. What is the range of $V_{i}$ that will maintain the Zener diode in the on' ... $34\: V$ $24\: V$ to $36\: V$ $18\: V$ to $24\: V$ $20\: V$ to $28\: V$

In the circuit shown, the breakdown voltage and the maximum current of the Zener diode are $20\:V$ and $60\:mA$, respectively. The values of $R_{1}$ and $R_{L}$ are $200\...

Arjun

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39

GATE ECE 2016 Set 3 | Question: 11
The figure shows the band diagram of a Metal Oxide Semiconductor (MOS). The surface region of this MOS is in inversion accumulation depletion flat band

The figure shows the band diagram of a Metal Oxide Semiconductor (MOS). The surface region of this MOS is ininversionaccumulationdepletionflat band

Milicevic3306

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40

GATE ECE 2015 Set 2 | Question: 9
An $n$-type silicon sample is uniformly illuminated with light which generates $10^{20}$ electron-hole pairs per $cm^{3}$ per second. The minority carrier lifetime in the sample is $1\mu s$. In the steady state, the hole concentration in the sample is approximately $10^{x}$, where $x$ is an integer. The value of $x$ is _______.

An $n$-type silicon sample is uniformly illuminated with light which generates $10^{20}$ electron-hole pairs per $cm^{3}$ per second. The minority carrier lifetime in the...

Milicevic3306

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Milicevic3306 asked Mar 27, 2018