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Recent questions tagged bipolar-junction-transistor
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GATE ECE 2020 | Question: 33
The base of an $\text{npn BJT T1}$ has a linear doping profile $N_{B}\left ( x \right )$ as shown below. The base of another $\text{npn BJT T2}$ has a uniform doping $N_{B}$ of $10^{17}cm^{-3}$. All other parameters are identical for both the ... $\text{T1}$. approximately $2.5$ times that of $\text{T1}$. approximately $0.7$ times that of $\text{T1}$.
The base of an $\text{npn BJT T1}$ has a linear doping profile $N_{B}\left ( x \right )$ as shown below. The base of another $\text{npn BJT T2}$ has a uniform doping $N_...
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Feb 13, 2020
Analog Circuits
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GATE ECE 2020 | Question: 35
For the $\text{BJT}$ in the amplifier shown below, $V_{BE}=0.7V,\:kT/q=26\:mV$. Assume that $\text{BJT}$ output resistance $(r_{o})$ is very high and the base current is negligible. The capacitors are also assumed to be short circuited at signal frequencies. The ... The low frequency voltage gain $v_{o}/v_{i}$ of the amplifier is $-89.42$ $-128.21$ $-178.85$ $-256.42$
For the $\text{BJT}$ in the amplifier shown below, $V_{BE}=0.7V,\:kT/q=26\:mV$. Assume that $\text{BJT}$ output resistance $(r_{o})$ is very high and the base current is ...
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Feb 13, 2020
Analog Circuits
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3
GATE ECE 2020 | Question: 44
In the voltage regulator shown below, $V_{1}$ is the unregulated imput at $15\:V$. Assume $V_{BE}=0.7\:V$ and the base current is negligible for both the $\text{BJTs}$. If the regulated output $V_{O}$ is $9\:V$, the value of $R_{2}$ is ___________$\Omega$
In the voltage regulator shown below, $V_{1}$ is the unregulated imput at $15\:V$. Assume $V_{BE}=0.7\:V$ and the base current is negligible for both the $\text{BJTs}$. I...
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Feb 13, 2020
Analog Circuits
gate2020-ec
numerical-answers
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bipolar-junction-transistor
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1
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4
GATE ECE 2016 Set 3 | Question: 37
The injected excess electron concentration profile in the base region of an $npn$ BJT, biased in the active region, is linear, as shown in the figure. If the area of the emitter-base junction is $0.001\:cm^2 ,\mu_n=800cm^2/(V-s)$ in the ... is _________ (Given: thermal voltage $V_T=26 \: mV$ at room temperature, electronic charge $ q=1.6\times10^{-19}C$)
The injected excess electron concentration profile in the base region of an $npn$ BJT, biased in the active region, is linear, as shown in the figure. If the area of the ...
Milicevic3306
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Mar 27, 2018
Analog Circuits
gate2016-ec-3
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5
GATE ECE 2016 Set 2 | Question: 11
The Ebers-Moll model of a $BJT$ is valid only in active mode only in active and saturation modes only in active and cut-off modes in active, saturation and cut-off modes
The Ebers-Moll model of a $BJT$ is valid only in active modeonly in active and saturation modesonly in active and cut-off modesin active, saturation and cut-off modes
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Mar 27, 2018
Analog Circuits
gate2016-ec-2
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6
GATE ECE 2015 Set 3 | Question: 11
In the circuit shown in the figure, the BJT has a current gain $(\beta)$ of $50.$ For an emitter-base voltage ܸ $V_{EB} = 600\: mV,$ the emitter-collector voltage $V_{EC}$ (in Volts) is _______.
In the circuit shown in the figure, the BJT has a current gain $(\beta)$ of $50.$ For an emitter-base voltage ܸ $V_{EB} = 600\: mV,$ the emitter-collector voltage $V_{EC...
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Mar 27, 2018
Analog Circuits
gate2015-ec-3
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7
GATE ECE 2015 Set 3 | Question: 35
An npn BJT having reverse saturation current $I_{S} = 10^{-15}\:A$ is biased in the forward active region with $V_{BE} = 700\: mV.$ The thermal voltage $(V_{T})$ is $25\: mV$ and the current gain $(β)$ may vary from $50$ to $150$ due to manufacturing variations. The maximum emitter current $(\text{in}\: \mu A)$ is ________.
An npn BJT having reverse saturation current $I_{S} = 10^{-15}\:A$ is biased in the forward active region with $V_{BE} = 700\: mV.$ The thermal voltage $(V_{T})$ is $25\:...
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Mar 27, 2018
Analog Circuits
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8
GATE ECE 2015 Set 2 | Question: 42
In the ac equivalent circuit shown, the two BJTs are biased in active region and have identical parameters with $\beta \gg 1$. The open circuit small signal voltage gain is approximately _______.
In the ac equivalent circuit shown, the two BJTs are biased in active region and have identical parameters with $\beta \gg 1$. The open circuit small signal voltage gain ...
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Mar 27, 2018
Analog Circuits
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numerical-answers
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9
GATE ECE 2014 Set 4 | Question: 35
Consider two BJTs biased at the same collector current with area $A_1=0.2 \mu m \times 0.2 \mu m$ and $A_2 = 300 \mu m \times 300 \mu m$. Assuming that all other device parameters are identical, $kT/q=26 \: mV$, the intrinsic carrier concentration ... $V_{BE1}-V_{BE2})$ is ________.
Consider two BJTs biased at the same collector current with area $A_1=0.2 \mu m \times 0.2 \mu m$ and $A_2 = 300 \mu m \times 300 \mu m$. Assuming that all other device p...
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Mar 26, 2018
Analog Circuits
gate2014-ec-4
numerical-answers
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0
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10
GATE ECE 2014 Set 3 | Question: 37
In the circuit shown, the silicon BJT has $\beta = 50$. Assume $V_{BE}= 0.7 \: V$ and $V_{CE(sat)}= 0.2 \: V$. Which one of the following statements is correct? For $R_{C}= 1$ $k$\Omega$, the BJT operates in the saturation region For $R_{ ... $k$\Omega$, the BJT operates in the cut-off region For $R_{C}= 20$ $k$\Omega$, the BJT operates in the linear region
In the circuit shown, the silicon BJT has $\beta = 50$. Assume $V_{BE}= 0.7 \: V$ and $V_{CE(sat)}= 0.2 \: V$. Which one of the following statements is correct? ...
Milicevic3306
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Milicevic3306
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Mar 26, 2018
Analog Circuits
gate2014-ec-3
bipolar-junction-transistor
analog-circuits
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11
GATE ECE 2014 Set 2 | Question: 9
An increase in the base recombination of a BJT will increase the common emitter dc current gain $\beta$ the breakdown voltage $BV_{CEO}$ the unity-gain cut-off frequency $f_{T}$ the transconductance $g_{m}$
An increase in the base recombination of a BJT will increasethe common emitter dc current gain $\beta$the breakdown voltage $BV_{CEO}$the unity-gain cut-off frequency $f_...
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Mar 26, 2018
Analog Circuits
gate2014-ec-2
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bipolar-junction-transistor
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12
GATE ECE 2014 Set 1 | Question: 34
A BJT is biased in forward active mode. Assume $V_{EE} = 0.7\:V, \: kT/q = 25\:mV$ and reverse saturation current $I_{S} = 10^{-13}\:A.$ The transconductance of the BJT (in $mA/V$) is __________
A BJT is biased in forward active mode. Assume $V_{EE} = 0.7\:V, \: kT/q = 25\:mV$ and reverse saturation current $I_{S} = 10^{-13}\:A.$ The transconductance of the BJT ...
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Mar 25, 2018
Analog Circuits
gate2014-ec-1
numerical-answers
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analog-circuits
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13
GATE ECE 2014 Set 1 | Question: 37
In the voltage regulator circuit shown in the figure, the op-amp is ideal. The BJT has $V_{BE} = 0.7\:V$ and $\beta = 100,$ and the zener voltage is $4.7\:V.$ For a regulated output of $9\:V,$ the value of $R$ (in $\Omega)$ is ______.
In the voltage regulator circuit shown in the figure, the op-amp is ideal. The BJT has $V_{BE} = 0.7\:V$ and $\beta = 100,$ and the zener voltage is $4.7\:V.$ For a regul...
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Milicevic3306
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Mar 25, 2018
Analog Circuits
gate2014-ec-1
numerical-answers
analog-circuits
op-amps
bipolar-junction-transistor
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0
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0
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14
GATE ECE 2017 Set 2 | Question: 41
In the circuit shown, transistors $Q_1$ and $Q_2$ are biased at a collector current of $2.6$ mA. Assuming that transistor current gains are sufficiently large to assume collector current equal to emitter current and thermal voltage of $26$ mV, the magnitude of voltage gain $V_0/V_s$ in the mid-band frequency range is __________(up to second decimal place).
In the circuit shown, transistors $Q_1$ and $Q_2$ are biased at a collector current of $2.6$ mA. Assuming that transistor current gains are sufficiently large to assume c...
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46.4k
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admin
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Nov 25, 2017
Analog Circuits
gate2017-ec-2
bipolar-junction-transistor
numerical-answers
analog-circuits
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0
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15
GATE ECE 2017 Set 2 | Question: 14
Consider the circuit shown in the figure. Assume base-to-emitter voltage $V_{BE}=0.8 V$ and common-base current gain ($\alpha$) of the transistor is unity. The value of the collector-to-emitter voltage $V_{CE}$ (in volt) is ____________
Consider the circuit shown in the figure. Assume base-to-emitter voltage $V_{BE}=0.8 V$ and common-base current gain ($\alpha$) of the transistor is unity. The value of t...
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46.4k
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Nov 23, 2017
Analog Circuits
gate2017-ec-2
bipolar-junction-transistor
numerical-answers
analog-circuits
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0
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16
GATE ECE 2017 Set 2 | Question: 10
An $npn$ bipolar junction transistor (BJT) is operating in the active region. If the reverse bias across the base-collector junction is increased, then the effective base width increases and common-emitter current gain ... width decreases and common-emitter current gain increases the effective base width decreases and common-emitter current gain decreases
An $npn$ bipolar junction transistor (BJT) is operating in the active region. If the reverse bias across the base-collector junction is increased, then the effective base...
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admin
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Nov 23, 2017
Analog Circuits
gate2017-ec-2
bipolar-junction-transistor
analog-circuits
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0
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17
GATE ECE 2017 Set 1 | Question: 39
In the figure shown, the $npn$ transistor acts as a switch. For the input $V_{in}(t)$ as shown in the figure, the transistor switches between the cut-off and saturation regions of operation, when $T$ is large. Assume collector-to-emitter ... $(\alpha)$ of the transistor for the switching should be __________.
In the figure shown, the $npn$ transistor acts as a switch.For the input $V_{in}(t)$ as shown in the figure, the transistor switches between the cut-off and saturation re...
admin
46.4k
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100
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admin
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Nov 17, 2017
Analog Circuits
gate2017-ec-1
bipolar-junction-transistor
numerical-answers
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