Recent questions tagged carrier-transport / GO Electronics

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GATE ECE 2019 | Question: 41
The $\text{RC}$ circuit shown below has a variable resistance $R(t)$ given by the following expression: $R(t)=R_{0}\left(1-\frac{t}{T}\right) \text{for} \:\: 0 \leq t < T$ where $R_{0}=1\: \Omega,$ and $C=1\:F.$ ... $t=0$ is $1\: A,$ then the current $I(t)$, in amperes, at time $t=T/2$ is __________ (rounded off to $2$ decimal places).

The $\text{RC}$ circuit shown below has a variable resistance $R(t)$ given by the following expression:$$R(t)=R_{0}\left(1-\frac{t}{T}\right) \text{for} \:\: 0 \leq t < T...

Arjun

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Arjun asked Feb 12, 2019

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GATE ECE 2016 Set 3 | Question: 33
In the figure shown, the current $i$ (in ampere) is _________

In the figure shown, the current $i$ (in ampere) is _________

Milicevic3306

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Milicevic3306 asked Mar 27, 2018

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GATE ECE 2012 | Question: 53
An infinitely long uniform solid wire of radius $a$ carries a uniform dc current of density $\overrightarrow{j}$. A hole of radius $b$ (b < a) ia now drilled along the length of the wire at a distance $d$ from the center of the wire as shown ... uniform and depends only on $d$ uniform and depends only on $b$ uniform and depends only on both $b$ and $d$ non uniform

An infinitely long uniform solid wire of radius $a$ carries a uniform dc current of density $\overrightarrow{j}$.A hole of radius $b$ (b < a) ia now drilled along the len...

Milicevic3306

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Milicevic3306 asked Mar 25, 2018

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GATE ECE 2012 | Question: 52
An infinitely long uniform solid wire of radius $a$ carries a uniform dc current of density $\overrightarrow{j}$. The magnetic field at a distance $r$ from the center of the wire is proportional to $r$ for $r\lt a$ and $\frac{1}{r^2}$ for $r\gt a$ $0$ for $r\lt a$ ... $r\lt a$ and $\frac{1}{r}$ for $r\gt a$ $0$ for $r\lt a$ and $\frac{1}{r^2}$ for $r\gt a$

An infinitely long uniform solid wire of radius $a$ carries a uniform dc current of density $\overrightarrow{j}$.The magnetic field at a distance $r$ from the center of t...

Milicevic3306

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Milicevic3306 asked Mar 25, 2018

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GATE ECE 2012 | Question: 8
The $i-v$ characteristics of the diode in the circuit given below are $i = \begin{cases} \frac{v-0.07}{500}\:A, & v\ge0.7\:V \\ \:\:\:\:\:\:\:\:0\:A, & v \lt 0.7\:V \end{cases}$ The current in the circuit is $10\:mA$ $9.3\:mA$ $6.67\:mA$ $6.2\:mA$

The $i-v$ characteristics of the diode in the circuit given below are$$i = \begin{cases} \frac{v-0.07}{500}\:A, & v\ge0.7\:V \\ \:\:\:\:\:\:\:\:0\:A, & v \lt 0.7\:V \en...

Milicevic3306

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Milicevic3306 asked Mar 25, 2018

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GATE ECE 2017 Set 2 | Question: 31
The switch in the circuit, shown in the figure, was open for a long time and is closed at $t=0$. The current $i(t)$ (in ampere) at $t=0.5$ seconds is ____________

The switch in the circuit, shown in the figure, was open for a long time and is closed at $t=0$. The current $i(t)$ (in ampere) at $t=0.5$ seconds is ____________

admin

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admin asked Nov 25, 2017

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GATE ECE 2017 Set 1 | Question: 37
As shown , a uniformly doped Silicon bar of length $L=0.1\mu m$ with a donor concentration $N_{D}=10^{16}cm^{-3}$ is illuminated at $x=0$ ... that goes to $0$ at $x=L$, the magnitude of the diffusion current density at $x=L/2$, in $A/cm^{2}$, is ___________.

As shown , a uniformly doped Silicon bar of length $L=0.1\mu m$ with a donor concentration $N_{D}=10^{16}cm^{-3}$ is illuminated at $x=0$ such that electron and hole pair...

admin

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admin asked Nov 17, 2017

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GATE ECE 2017 Set 1 | Question: 36
The dependence of drift velocity of electrons on electric field in a semiconductor is shown below. The semiconductor has a uniform electron concentration of $n=1 \times 10^{16} cm^{3}$ and electronic charge $q=1.6 \times 10 ^{-19}C$. If a bias ... a $1 µm$ region of this semiconductor, the resulting current density in this region, in $kA/cm^{2} $, is _____.

The dependence of drift velocity of electrons on electric field in a semiconductor is shown below. The semiconductor has a uniform electron concentration of $n=1 \times 1...

admin

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admin asked Nov 17, 2017

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GATE ECE 2017 Set 1 | Question: 10
An $n^+-n$ Silicon device is fabricated with uniform and non-degenerate donor doping concentrations of $N_{D1}=1\times 10^{18}cm^{-3}$ and $N_{D2}=1\times 10^{15}cm^{-3}$ corresponding to the $n^+$ and $n$ regions respectively. At the operational temperature $T$, ... of the build-in potential of this device? $0.748 \: V$ $0.460 \: V$ $0.288 \: V$ $0.173 \: V$

An $n^+-n$ Silicon device is fabricated with uniform and non-degenerate donor doping concentrations of $N_{D1}=1\times 10^{18}cm^{-3}$ and $N_{D2}=1\times 10^{15}cm^{-3}$...

admin

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admin asked Nov 17, 2017