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GATE ECE 2014 Set 3 | Question: 10
At $T= 300 \: K$, the hole mobility of a semiconductor $\mu _{p}= 500$ $cm^{2}$/V-s$ and $\frac{kT}{q}= 26$ $mV$. The hole diffusion constant $D_{p}$ in $cm^{2}$/s$ is _________
At $T= 300 \: K$, the hole mobility of a semiconductor $\mu _{p}= 500$ $cm^{2}$$/V-s$ and $\frac{kT}{q}= 26$ $mV$. The hole diffusion constant $D_{p}$ in $cm^{2}$$/s$ is ...
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