GO Electronics
Login
Register
Dark Mode
Brightness
Profile
Edit Profile
Messages
My favorites
My Updates
Logout
Recent questions tagged electronic-devices
0
votes
0
answers
41
GATE ECE 2016 Set 1 | Question: 41
A $p-i-n$ photodiode of responsivity $0.8 \: A/W$ is connected to the inverting input of an ideal opamp as shown in the figure, $+V_{CC}= 15 V, \: – V_{CC} = – 15 V$, Load resistor $R_L=10k\Omega$. If $10 \mu W$ of power is incident on the photodiode, then the value of the photocurrent(in $\mu A$) through the load is _________
A $p-i-n$ photodiode of responsivity $0.8 \: A/W$ is connected to the inverting input of an ideal opamp as shown in the figure, $+V_{CC}= 15 V, \: – V_{CC} = – 15 V$...
Milicevic3306
16.0k
points
78
views
Milicevic3306
asked
Mar 27, 2018
Electronic Devices
gate2016-ec-1
numerical-answers
electronic-devices
photo-diode
+
–
0
votes
0
answers
42
GATE ECE 2016 Set 1 | Question: 51
The current density in a medium is given by ${\overrightarrow J= \frac{400 \sin\theta}{2\pi(r^2+4)} \hat {a}_r \: Am^{-2}}$ The total current and the average current density flowing through the portion of a spherical surface $r = 0.8 \: m$ ... $18.73 A, \: 13.65 Am^{-2}$ $12.86 A, \: 9.23 Am^{-2}$ $10.28 A, \: 7.56 Am^{-2}$
The current density in a medium is given by $${\overrightarrow J= \frac{400 \sin\theta}{2\pi(r^2+4)} \hat {a}_r \: Am^{-2}}$$The total current and the average current den...
Milicevic3306
16.0k
points
68
views
Milicevic3306
asked
Mar 27, 2018
Electronic Devices
gate2016-ec-1
electronic-devices
+
–
0
votes
0
answers
43
GATE ECE 2015 Set 3 | Question: 30
In the circuit shown, the current $I$ flowing through the $50\;\Omega$ resistor will be zero if the value of capacitor $C (\text{in}\: \mu F)$ is ______.
In the circuit shown, the current $I$ flowing through the $50\;\Omega$ resistor will be zero if the value of capacitor $C (\text{in}\: \mu F)$ is ______.
Milicevic3306
16.0k
points
82
views
Milicevic3306
asked
Mar 27, 2018
Electronic Devices
gate2015-ec-3
numerical-answers
electronic-devices
+
–
0
votes
0
answers
44
GATE ECE 2015 Set 3 | Question: 33
The electric field profile in the depletion region of a p-n junction in equilibrium is shown in the figure. Which one of the following statements is NOT TRUE? The left side of the junction is n-type and the right side is p-type Both the n-type and p-type depletion ... $10^{16}\: cm^{-3}$
The electric field profile in the depletion region of a p-n junction in equilibrium is shown in the figure. Which one of the following statements is NOT TRUE?The left sid...
Milicevic3306
16.0k
points
116
views
Milicevic3306
asked
Mar 27, 2018
Electronic Devices
gate2015-ec-3
electronic-devices
p-n-junction
+
–
0
votes
0
answers
45
GATE ECE 2015 Set 3 | Question: 55
A coaxial capacitor of inner radius $1\: mm$ and outer radius $5\: mm$ has a capacitance per unit length of $172\: pF/m.$ If the ratio of outer radius to inner radius is doubled, the capacitance per unit length $\text{(in}\: pF/m)$ is ________.
A coaxial capacitor of inner radius $1\: mm$ and outer radius $5\: mm$ has a capacitance per unit length of $172\: pF/m.$ If the ratio of outer radius to inner radius is ...
Milicevic3306
16.0k
points
71
views
Milicevic3306
asked
Mar 27, 2018
Electronic Devices
gate2015-ec-3
numerical-answers
electronic-devices
+
–
0
votes
0
answers
46
GATE ECE 2015 Set 2 | Question: 9
An $n$-type silicon sample is uniformly illuminated with light which generates $10^{20}$ electron-hole pairs per $cm^{3}$ per second. The minority carrier lifetime in the sample is $1\mu s$. In the steady state, the hole concentration in the sample is approximately $10^{x}$, where $x$ is an integer. The value of $x$ is _______.
An $n$-type silicon sample is uniformly illuminated with light which generates $10^{20}$ electron-hole pairs per $cm^{3}$ per second. The minority carrier lifetime in the...
Milicevic3306
16.0k
points
142
views
Milicevic3306
asked
Mar 27, 2018
Electronic Devices
gate2015-ec-2
numerical-answers
electronic-devices
intrinsic-and-extrinsic-silicon
+
–
0
votes
0
answers
47
GATE ECE 2015 Set 2 | Question: 10
A piece of silicon is doped uniformly with phosphorous with a doping concentration of $10^{16}/cm^{3}.$ The expected value of mobility versus doping concentration for silicon assuming full dopant ionization is shown below. The charge of an electron is $1.6 \times 10^{-19} \:C.$ The conductivity $\text{(in S } cm^{-1})$ of the silicon sample at $300\:K$ is _______.
A piece of silicon is doped uniformly with phosphorous with a doping concentration of $10^{16}/cm^{3}.$ The expected value of mobility versus doping concentration for sil...
Milicevic3306
16.0k
points
92
views
Milicevic3306
asked
Mar 27, 2018
Electronic Devices
gate2015-ec-2
numerical-answers
electronic-devices
intrinsic-and-extrinsic-silicon
+
–
0
votes
0
answers
48
GATE ECE 2015 Set 2 | Question: 33
A dc voltage of $10\: V$ is applied across an $n$-type silicon bar having a rectangular cross-section and a length of $1\:cm$ as shown in figure. The donor doping concentration $N_{D}$ and the mobility of electrons $\mu_{n}$ ... The average time $(\text{in}\: \mu s)$ taken by the electrons to move from one end of the bar to other end is ________.
A dc voltage of $10\: V$ is applied across an $n$-type silicon bar having a rectangular cross-section and a length of $1\:cm$ as shown in figure. The donor doping concent...
Milicevic3306
16.0k
points
99
views
Milicevic3306
asked
Mar 27, 2018
Electronic Devices
gate2015-ec-2
numerical-answers
electronic-devices
intrinsic-and-extrinsic-silicon
+
–
0
votes
0
answers
49
GATE ECE 2015 Set 2 | Question: 34
In a MOS capacitor with an oxide layer thickness of $10\: nm,$ the maximum depletion layer thickness is $100\: nm.$ The permittivities of the semiconductor and the oxide layer are $\varepsilon_{s}$ and $\varepsilon_{ox}$ respectively. ... the ratio of the maximum capacitance to the minimum capacitance of this MOS capacitor is ________.
In a MOS capacitor with an oxide layer thickness of $10\: nm,$ the maximum depletion layer thickness is $100\: nm.$ The permittivities of the semiconductor and the oxide ...
Milicevic3306
16.0k
points
90
views
Milicevic3306
asked
Mar 27, 2018
Electronic Devices
gate2015-ec-2
numerical-answers
electronic-devices
mos-capacitor
+
–
0
votes
0
answers
50
GATE ECE 2015 Set 2 | Question: 35
The energy band diagram and the electron density profile $n(x)$ in a semiconductor are shown in the figures. Assume that $n(x) = 10^{15}e^{\left(\dfrac{q\alpha x}{kT}\right)}\:cm^{-3} ,$ with $\alpha = 0.1\:V/cm$ and $x$ ... $x=0$ is $-4.4\times 10^{-2}$ $-2.2\times 10^{-2}$ $0$ $2.2\times 10^{-2}$
The energy band diagram and the electron density profile $n(x)$ in a semiconductor are shown in the figures. Assume that $n(x) = 10^{15}e^{\left(\dfrac{q\alpha x}{kT}\rig...
Milicevic3306
16.0k
points
157
views
Milicevic3306
asked
Mar 27, 2018
Electronic Devices
gate2015-ec-2
electronic-devices
+
–
0
votes
0
answers
51
GATE ECE 2015 Set 1 | Question: 8
In the given circuit, the values of $V_1$ and $V_2$ respectively are $5$ V, $25$ V $10$ V, $30$ V $15$ V, $35$ V $0$ V, $20$ V
In the given circuit, the values of $V_1$ and $V_2$ respectively are$5$ V, $25$ V$10$ V, $30$ V$15$ V, $35$ V$0$ V, $20$ V
Milicevic3306
16.0k
points
110
views
Milicevic3306
asked
Mar 27, 2018
Electronic Devices
gate2015-ec-1
electronic-devices
+
–
0
votes
0
answers
52
GATE ECE 2015 Set 1 | Question: 9
A region of negative differential resistance is observed in the current voltage characteristics of a silicon PN junction if both the P - region and the N - region are heavily doped the N - region is heavily doped compared to the P - region the P ... doped compared to the N - region an intrinsic silicon region is inserted between the P - region and the N - region
A region of negative differential resistance is observed in the current voltage characteristics of a silicon PN junction ifboth the P – region and the N – region are ...
Milicevic3306
16.0k
points
143
views
Milicevic3306
asked
Mar 27, 2018
Electronic Devices
gate2015-ec-1
electronic-devices
p-n-junction
+
–
0
votes
0
answers
53
GATE ECE 2015 Set 1 | Question: 10
A silicon sample is uniformly doped with donor type impurities with a concentration of $10^{16} / cm^3$. The electron and hole mobilities in the sample are $1200 \: cm^2/V-s$ and $400 \: cm^2/V-s$ respectively. Assume complete ionization of impurities. ... an electron is $1.6 \times 10^{-19} \:C$. The resistivity of the sample (in $\Omega - cm$) is ___________.
A silicon sample is uniformly doped with donor type impurities with a concentration of $10^{16} / cm^3$. The electron and hole mobilities in the sample are $1200 \: cm^2/...
Milicevic3306
16.0k
points
73
views
Milicevic3306
asked
Mar 27, 2018
Electronic Devices
gate2015-ec-1
numerical-answers
electronic-devices
silicon
+
–
0
votes
0
answers
54
GATE ECE 2015 Set 1 | Question: 12
In the circuit shown below, the Zener diode is ideal and the Zener voltage is $6$ V. The output voltage $V_o$ (in volts) is ________.
In the circuit shown below, the Zener diode is ideal and the Zener voltage is $6$ V. The output voltage $V_o$ (in volts) is ________.
Milicevic3306
16.0k
points
97
views
Milicevic3306
asked
Mar 27, 2018
Electronic Devices
gate2015-ec-1
numerical-answers
zener-diode
electronic-devices
+
–
0
votes
0
answers
55
GATE ECE 2015 Set 1 | Question: 13
In the circuit shown, the switch SW is thrown from position $A$ to position $B$ at time $t=0$. The energy (in $\mu J$) taken from the $3$ V source to charge the $0.1 \: \mu F$ capacitor from $0$ V t $3$ V is $0.3$ $0.45$ $0.9$ $3$
In the circuit shown, the switch SW is thrown from position $A$ to position $B$ at time $t=0$. The energy (in $\mu J$) taken from the $3$ V source to charge the $0.1 \: \...
Milicevic3306
16.0k
points
98
views
Milicevic3306
asked
Mar 27, 2018
Electronic Devices
gate2015-ec-1
electronic-devices
+
–
0
votes
0
answers
56
GATE ECE 2015 Set 1 | Question: 33
The built-in potential of an abrupt p-n junction is $0.75$ V. If its junction capacitance $(C_J)$ at a reverse bias $(V_R)$ of $1.25 \: V$ is $5$ pF, the value of $C_J$ (in pF) when $V_R = 7.25 \: V$ is ________.
The built-in potential of an abrupt p-n junction is $0.75$ V. If its junction capacitance $(C_J)$ at a reverse bias $(V_R)$ of $1.25 \: V$ is $5$ pF, the value of $C_J$ (...
Milicevic3306
16.0k
points
77
views
Milicevic3306
asked
Mar 27, 2018
Electronic Devices
gate2015-ec-1
numerical-answers
electronic-devices
p-n-junction
+
–
0
votes
0
answers
57
GATE ECE 2015 Set 1 | Question: 35
For a silicon diode with long P and N regions, the accepter and donor impurity concentrations are $1 \times 10^{17} \:cm^{-3}$ and $1 \times 10^{15} \: cm^{-3}$, respectively. The lifetimes of electrons in P region and holes in N ... $nA/cm^2$) injected from P region to N region is __________.
For a silicon diode with long P and N regions, the accepter and donor impurity concentrations are $1 \times 10^{17} \:cm^{-3}$ and $1 \times 10^{15} \: cm^{-3}$, respecti...
Milicevic3306
16.0k
points
84
views
Milicevic3306
asked
Mar 27, 2018
Electronic Devices
gate2015-ec-1
numerical-answers
electronic-devices
+
–
0
votes
0
answers
58
GATE ECE 2014 Set 4 | Question: 7
The magnitude of current (in mA) through the resistor $R_2$ in the figure shown is __________
The magnitude of current (in mA) through the resistor $R_2$ in the figure shown is __________
Milicevic3306
16.0k
points
73
views
Milicevic3306
asked
Mar 26, 2018
Electronic Devices
gate2014-ec-4
numerical-answers
electronic-devices
+
–
0
votes
0
answers
59
GATE ECE 2014 Set 4 | Question: 9
In the figure, $\text{ln }(\rho _i)$ is plotted as a function of $1/T$, where $\rho_i$ is the intrinsic resistivity of silicon, $T$ is the temperature, and the plot is almost linear. The slope of the line can be used to estimate band gap ... the sum of electron and hole mobility in silicon $(\mu _n + \mu _p)^{-1}$ intrinsic carrier concentration of silicon $(n_i)$
In the figure, $\text{ln }(\rho _i)$ is plotted as a function of $1/T$, where $\rho_i$ is the intrinsic resistivity of silicon, $T$ is the temperature, and the plot is al...
Milicevic3306
16.0k
points
104
views
Milicevic3306
asked
Mar 26, 2018
Electronic Devices
gate2014-ec-4
electronic-devices
intrinsic-and-extrinsic-silicon
+
–
0
votes
0
answers
60
GATE ECE 2014 Set 4 | Question: 10
The cut-off wavelength (in $\mu m$) of light that can be used for intrinsic excitation of a semiconductor material of bandgap $E_g = 1.1 \: eV$ is ______________
The cut-off wavelength (in $\mu m$) of light that can be used for intrinsic excitation of a semiconductor material of bandgap $E_g = 1.1 \: eV$ is ______________
Milicevic3306
16.0k
points
70
views
Milicevic3306
asked
Mar 26, 2018
Electronic Devices
gate2014-ec-4
numerical-answers
electronic-devices
+
–
0
votes
0
answers
61
GATE ECE 2014 Set 4 | Question: 12
Two silicon diodes, with a forward voltage drop of $0.7 \: V$, are used in the circuit shown in the figure. The range of input voltage $V_i$ for which the output voltage $V_o=V_i$, is $-0.3 \:V < V_i < 1.3 \: V$ $-0.3 \:V < V_i < 2 \: V$ $-1.0 \:V < V_i < 2.0 \: V$ $-1.7 \:V < V_i < 2.7 \: V$
Two silicon diodes, with a forward voltage drop of $0.7 \: V$, are used in the circuit shown in the figure. The range of input voltage $V_i$ for which the output voltage ...
Milicevic3306
16.0k
points
83
views
Milicevic3306
asked
Mar 26, 2018
Electronic Devices
gate2014-ec-4
electronic-devices
intrinsic-and-extrinsic-silicon
+
–
0
votes
0
answers
62
GATE ECE 2014 Set 4 | Question: 34
Consider a silicon sample doped with $N_D = 1 \times 10^{15}/cm^3$ donor atoms. Assume that the intrinsic carrier concentration $n_i = 1.5 \times 10^{10}/cm^3$. If the sample is additionally doped with $N_A = 1 \times 10^{18}/cm^3$ acceptor atoms, the approximate number of electrons$/cm^3$ in the sample, at $T=300 \:K$, will be ________.
Consider a silicon sample doped with $N_D = 1 \times 10^{15}/cm^3$ donor atoms. Assume that the intrinsic carrier concentration $n_i = 1.5 \times 10^{10}/cm^3$. If the s...
Milicevic3306
16.0k
points
80
views
Milicevic3306
asked
Mar 26, 2018
Electronic Devices
gate2014-ec-4
numerical-answers
electronic-devices
intrinsic-and-extrinsic-silicon
+
–
0
votes
0
answers
63
GATE ECE 2014 Set 3 | Question: 6
A series $RC$ circuit is connected to a $DC$ voltage source at time $t= 0$. The relation between the source voltage $V_{s},$ the resistance $R$, the capacitance $C$, and the current $i(t)$ is given below. $V_{s}= R \: i(t)+\frac{1}{c}\int ^{t}_{o}i(u)du$. Which one of the following represents the current $i(t)$?
A series $RC$ circuit is connected to a $DC$ voltage source at time $t= 0$. The relation between the source voltage $V_{s},$ the resistance $R$, the capacitance $C$, and ...
Milicevic3306
16.0k
points
76
views
Milicevic3306
asked
Mar 26, 2018
Electronic Devices
gate2014-ec-3
electronic-devices
+
–
0
votes
0
answers
64
GATE ECE 2014 Set 3 | Question: 7
In the figure shown, the value of the current $I$ (in Amperes) is __________.
In the figure shown, the value of the current $I$ (in Amperes) is __________.
Milicevic3306
16.0k
points
87
views
Milicevic3306
asked
Mar 26, 2018
Electronic Devices
gate2014-ec-3
numerical-answers
electronic-devices
+
–
0
votes
0
answers
65
GATE ECE 2014 Set 3 | Question: 8
In MOSFET fabrication, the channel length is defined during the process of isolation oxide growth channel stop implantation poly-silicon gate patterning lithography step leading to the contact pads
In MOSFET fabrication, the channel length is defined during the process ofisolation oxide growthchannel stop implantationpoly-silicon gate patterninglithography step lead...
Milicevic3306
16.0k
points
91
views
Milicevic3306
asked
Mar 26, 2018
Electronic Devices
gate2014-ec-3
electronic-devices
analog-circuits
mosfet
+
–
0
votes
0
answers
66
GATE ECE 2014 Set 3 | Question: 9
A thin $P$-type silicon sample is uniformly illuminated with light which generates excess carriers. The recombination rate is directly proportional to the minority carrier mobility the minority carrier recombination lifetime the majority carrier concentration the excess minority carrier concentration
A thin $P$-type silicon sample is uniformly illuminated with light which generates excess carriers. The recombination rate is directly proportional tothe minority carrier...
Milicevic3306
16.0k
points
70
views
Milicevic3306
asked
Mar 26, 2018
Electronic Devices
gate2014-ec-3
electronic-devices
silicon
+
–
0
votes
0
answers
67
GATE ECE 2014 Set 3 | Question: 10
At $T= 300 \: K$, the hole mobility of a semiconductor $\mu _{p}= 500$ $cm^{2}$/V-s$ and $\frac{kT}{q}= 26$ $mV$. The hole diffusion constant $D_{p}$ in $cm^{2}$/s$ is _________
At $T= 300 \: K$, the hole mobility of a semiconductor $\mu _{p}= 500$ $cm^{2}$$/V-s$ and $\frac{kT}{q}= 26$ $mV$. The hole diffusion constant $D_{p}$ in $cm^{2}$$/s$ is ...
Milicevic3306
16.0k
points
69
views
Milicevic3306
asked
Mar 26, 2018
Electronic Devices
gate2014-ec-3
numerical-answers
electronic-devices
diffusion
+
–
0
votes
0
answers
68
GATE ECE 2014 Set 3 | Question: 12
In the circuit shown, the $PNP$ transistor has $\mid V_{BE} \mid = 0.7 \:V$ and $\beta = 50$. Assume that $R_{B}= 100 \: k \Omega$. For $V_{0}$ to be $5 \: V$, the value of $R_{C}$ (in $k \Omega$) is ________
In the circuit shown, the $PNP$ transistor has $\mid V_{BE} \mid = 0.7 \:V$ and $\beta = 50$. Assume that $R_{B}= 100 \: k \Omega$. For $V_{0}$ to be $5 \: V$, the value...
Milicevic3306
16.0k
points
150
views
Milicevic3306
asked
Mar 26, 2018
Electronic Devices
gate2014-ec-3
numerical-answers
electronic-devices
p-n-p-transistor
+
–
0
votes
0
answers
69
GATE ECE 2014 Set 3 | Question: 31
In the circuit shown in the figure, the value of node voltage $V_{2}$ is $22+j$ $2$ $V$ $2 +j$ $22$ $V$ $22 -j$ $2$ $V$ $2 -j$ $22$ $V$
In the circuit shown in the figure, the value of node voltage $V_{2}$ is $22+j$ $2$ $V$ $2 +j$ $22$ $V$$22 -j$ $2...
Milicevic3306
16.0k
points
93
views
Milicevic3306
asked
Mar 26, 2018
Electronic Devices
gate2014-ec-3
electronic-devices
node-voltage
+
–
0
votes
0
answers
70
GATE ECE 2014 Set 3 | Question: 34
The donor and accepter impurities in an abrupt junction silicon diode are $1\times 10^{16} cm^{-3}$ and $5\times 10^{18}$cm^{-3}$, respectively. Assume that the intrinsic carrier concentration in silicon $n_{i}= 1.5\times 10^{10}cm^{-3}$ at $300K, \frac{kT}{q}= 26$ $ ... $0.7$ $V$ and $3.3\times 10^{-5} cm$ $0.86$ $V$ and $3.3\times 10^{-5} cm$
The donor and accepter impurities in an abrupt junction silicon diode are $1\times 10^{16} cm^{-3}$ and $5\times 10^{18}$$cm^{-3}$, respectively. Assume that the intrinsi...
Milicevic3306
16.0k
points
72
views
Milicevic3306
asked
Mar 26, 2018
Electronic Devices
gate2014-ec-3
electronic-devices
intrinsic-and-extrinsic-silicon
+
–
0
votes
0
answers
71
GATE ECE 2014 Set 3 | Question: 35
The slope of the $I_{D}$ vs. $V_{GS}$ curve of an n-channel MOSEFT in linear regime is $10^{-3}\Omega ^{-1}$ at $V_{DS}= 0.1 \: V$. For the same device, neglecting channel length modulation, the slope of the $\sqrt{I_{D} }$ vs. $V_{GS}$ curve (in $\sqrt{A}/V$) under saturation regime is approximately _________.
The slope of the $I_{D}$ vs. $V_{GS}$ curve of an n-channel MOSEFT in linear regime is $10^{-3}\Omega ^{-1}$ at $V_{DS}= 0.1 \: V$. For the same device, neglecting channe...
Milicevic3306
16.0k
points
100
views
Milicevic3306
asked
Mar 26, 2018
Electronic Devices
gate2014-ec-3
numerical-answers
electronic-devices
mosfet
+
–
0
votes
0
answers
72
GATE ECE 2014 Set 3 | Question: 36
An ideal MOS capacitor has boron doping-concentration of $10^{15}cm^{-3}$ in the substrate. When a gate voltage is applied, a depletion region of width $0.5$ $\mu m$ is formed with a surface (channel) potential of $0.2$ $V$. Given that ... silicon dioxide are $12$ and $4$, respectively, the peak electric field (in $V/\mu m$) in the oxide region is _______________.
An ideal MOS capacitor has boron doping-concentration of $10^{15}cm^{-3}$ in the substrate. When a gate voltage is applied, a depletion region of width $0.5$ $\mu m$ is f...
Milicevic3306
16.0k
points
141
views
Milicevic3306
asked
Mar 26, 2018
Electronic Devices
gate2014-ec-3
numerical-answers
electronic-devices
mos-capacitor
+
–
0
votes
0
answers
73
GATE ECE 2014 Set 3 | Question: 39
For the MOSFET $M_{1}$ shown in the figure, assume $W/L= 2$, $V_{DD}= 2.0 \: V$, $\mu _{n}C_{ox}= 100\mu A/V^{2}$ and $V_{TH}= 0.5 \: V$. The transistor $M_{1}$ switches from saturation region to linear region when $V_{in}$(in $Volts$) is ____________.
For the MOSFET $M_{1}$ shown in the figure, assume $W/L= 2$, $V_{DD}= 2.0 \: V$, $\mu _{n}C_{ox}= 100\mu A/V^{2}$ and $V_{TH}= 0.5 \: V$. The transistor $M_{1}$ switches ...
Milicevic3306
16.0k
points
88
views
Milicevic3306
asked
Mar 26, 2018
Electronic Devices
gate2014-ec-3
numerical-answers
electronic-devices
mosfet
+
–
0
votes
0
answers
74
GATE ECE 2014 Set 2 | Question: 7
In the figure shown, the ideal switch has been open for a long time. If it is closed at t = 0, then the magnitude of the current (in mA) through the $4k \Omega$ resistor at $t= 0^{+}$ is ________.
In the figure shown, the ideal switch has been open for a long time. If it is closed at t = 0, then the magnitude of the current (in mA) through the $4k \Omega$ resistor ...
Milicevic3306
16.0k
points
83
views
Milicevic3306
asked
Mar 26, 2018
Electronic Devices
gate2014-ec-2
numerical-answers
electronic-devices
+
–
0
votes
0
answers
75
GATE ECE 2014 Set 2 | Question: 8
A silicon bar is doped with donor impurities $N_{D}= 2.25 \times 10^{15} \text{atoms} / cm^{3}$. Given the intrinsic carrier concentration of silicon at $T = 300 \: K$ is $n_{i}= 1.5 \times 10^{10} cm^{-3}.$ Assuming complete impurity ionization, the equilibrium electron and ... $n_{0}=2.25\times 10^{15}cm^{-3}, \: p_{0}= 1\times 10^{5}cm^{-3}$
A silicon bar is doped with donor impurities $N_{D}= 2.25 \times 10^{15} \text{atoms} / cm^{3}$. Given the intrinsic carrier concentration of silicon at $T = 300 \: K$ is...
Milicevic3306
16.0k
points
95
views
Milicevic3306
asked
Mar 26, 2018
Electronic Devices
gate2014-ec-2
electronic-devices
intrinsic-and-extrinsic-silicon
+
–
0
votes
0
answers
76
GATE ECE 2014 Set 2 | Question: 10
In CMOS technology, shallow P-well or N-well regions can be formed using low pressure chemical vapour deposition low energy sputtering low temperature dry oxidation low energy ion-implantation
In CMOS technology, shallow P-well or N-well regions can be formed usinglow pressure chemical vapour deposition low energy sputteringlow temperature dry oxidationlow ener...
Milicevic3306
16.0k
points
82
views
Milicevic3306
asked
Mar 26, 2018
Electronic Devices
gate2014-ec-2
electronic-devices
cmos
+
–
0
votes
0
answers
77
GATE ECE 2014 Set 2 | Question: 32
In the figure shown, the capacitor is initially uncharged. Which one of the following expressions describes the current $I(t)$ (in mA) for $t > 0$? $I(t)= \frac{5}{3}(1-e^{-t/ \tau}), \tau= \frac{2}{3} \text{msec} \\$ ... $I(t)= \frac{5}{2}(1-e^{-t/\tau}), \tau= 3 \text{msec}$
In the figure shown, the capacitor is initially uncharged. Which one of the following expressions describes the current $I(t)$ (in mA) for $t 0$? $I(t)= ...
Milicevic3306
16.0k
points
95
views
Milicevic3306
asked
Mar 26, 2018
Electronic Devices
gate2014-ec-2
electronic-devices
+
–
0
votes
0
answers
78
GATE ECE 2014 Set 2 | Question: 34
Assume electronic charge $q= 1.6 \times 10^{-19} \: C$, $kT/q=25 \: mV$ and electron mobility $\mu_{n}= 1000cm^{2}/ V-s$. If the concentration gradient of electrons injected into a $P$-type silicon sample is $ 1 \times 10^{21}/cm^{4}$, the magnitude of electron diffusion current density (in $A/cm^{2}$) is _________ .
Assume electronic charge $q= 1.6 \times 10^{-19} \: C$, $kT/q=25 \: mV$ and electron mobility $\mu_{n}= 1000cm^{2}/ V-s$. If the concentration gradient of electrons injec...
Milicevic3306
16.0k
points
80
views
Milicevic3306
asked
Mar 26, 2018
Electronic Devices
gate2014-ec-2
numerical-answers
electronic-devices
+
–
0
votes
0
answers
79
GATE ECE 2014 Set 2 | Question: 36
When a silicon diode having a doping concentration of $N_{A}= 9\times 10^{16}cm^{-3}$ on $p$-side and $N_{D}= 1 \times 10^{16}cm^{-3}$ on $n$-side is reverse biased, the total depletion width is found to be $3 \mu$ ... $0.3 \mu m$ and $0.42 \times 10^{5} V/cm$ $2.1 \mu m$ and $0.42 \times 10^{5} V/cm$
When a silicon diode having a doping concentration of $N_{A}= 9\times 10^{16}cm^{-3}$ on $p$-side and $N_{D}= 1 \times 10^{16}cm^{-3}$ on $n$-side is reverse biased, the...
Milicevic3306
16.0k
points
113
views
Milicevic3306
asked
Mar 26, 2018
Electronic Devices
gate2014-ec-2
electronic-devices
intrinsic-and-extrinsic-silicon
+
–
0
votes
0
answers
80
GATE ECE 2014 Set 2 | Question: 38
For the n-channel MOS transistor shown in the figure, the threshold voltage $V_{Th}$ is $0.8$ V. Neglect channel length modulation effects. When the drain voltage $V_{D}= 1.6 V,$ the drain current $I_{D}$ was found to be $0.5$ mA. If $V_{D}$is adjusted to be $2$ V ... the values of R and $V_{DD}$, the new value of $I_{D}$ (in mA) is $0.625$ $0.75$ $1.125$ $1.5$
For the n-channel MOS transistor shown in the figure, the threshold voltage $V_{Th}$ is $0.8$ V. Neglect channel length modulation effects. When the drain voltage $V_{D}=...
Milicevic3306
16.0k
points
75
views
Milicevic3306
asked
Mar 26, 2018
Electronic Devices
gate2014-ec-2
electronic-devices
mos-transistor
+
–
Page:
« prev
1
2
3
4
next »
GO Electronics
Email or Username
Show
Hide
Password
I forgot my password
Remember
Log in
Register