Recent questions tagged electronic-devices / GO Electronics

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81

GATE ECE 2014 Set 2 | Question: 35
Consider an abrupt PN junction (at $T = 300 K$) shown in the figure. The depletion region width $X_{n}$ on the $N$-side of the junction is $0.2 \mu m$ and the permittivity of silicon $( \varepsilon _{gi} )$ is $1.044 \times 10^{-12} \: F/cm$. At the junction, the approximate value of the peak electric field (in $kV/cm$) is ___________.

Consider an abrupt PN junction (at $T = 300 K$) shown in the figure. The depletion region width $X_{n}$ on the $N$-side of the junction is $0.2 \mu m$ and the permittivit...

Milicevic3306

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Milicevic3306 asked Mar 26, 2018

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82

GATE ECE 2014 Set 1 | Question: 8
When the optical power incident on a photodiode is $10\:\mu W$ and the responsivity is $0.8\: A/ W,$ the photocurrent generated $(\text{in} \:\mu A)$ is_______.

When the optical power incident on a photodiode is $10\:\mu W$ and the responsivity is $0.8\: A/ W,$ the photocurrent generated $(\text{in} \:\mu A)$ is_______.

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Milicevic3306 asked Mar 25, 2018

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83

GATE ECE 2014 Set 1 | Question: 9
In the figure, assume that the forward voltage drops of the $PN$ diode $D_{1}$ and Schottky diode $D_{2}$ are $0.7\: V$ and $0.3\: V,$ ... is ON and $D_{2}$ is OFF both $D_{1}$ and $D_{2}$ are OFF $D_{1}$ is OFF and $D_{2}$ is ON

In the figure, assume that the forward voltage drops of the $PN$ diode $D_{1}$ and Schottky diode $D_{2}$ are $0.7\: V$ and $0.3\: V,$ respectively. If ON denotes conduct...

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Milicevic3306 asked Mar 25, 2018

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84

GATE ECE 2014 Set 1 | Question: 14
In the following circuit employing pass transistor logic, all NMOS transistors are identical with a threshold voltage of $1\: V.$ Ignoring the body-effect, the output voltage at $P,Q$ and $R$ are, $4\: V, 3\:V,2\:V$ $5\: V, 5\:V,5\:V$ $4\: V, 4\:V,4\:V$ $5\: V, 4\:V,3\:V$

In the following circuit employing pass transistor logic, all NMOS transistors are identical with a threshold voltage of $1\: V.$ Ignoring the body-effect, the output vol...

Milicevic3306

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Milicevic3306 asked Mar 25, 2018

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85

GATE ECE 2014 Set 1 | Question: 33
In the circuit shown in the figure, the value of capacitor $C\:(\text{in}\: mF)$ needed to have critically damped response $i(t)$ is ____.

In the circuit shown in the figure, the value of capacitor $C\:(\text{in}\: mF)$ needed to have critically damped response $i(t)$ is ____.

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Milicevic3306 asked Mar 25, 2018

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86

GATE ECE 2014 Set 1 | Question: 35
The doping concentrations on the $p$-side and $n$-side of a silicon diode are $1\times 10^{16}\:cm^{-3}$ and $1\times 10^{17}\:cm^{-3},$ respectively. A forward bias of $0.3\:V$ is applied to the diode. At $T = 300\:K,$ ... $1\times 10^{16}\:cm^{-3}$ $1\times 10^{17}\:cm^{-3}$ $2.25\times 10^{6}\:cm^{-3}$

The doping concentrations on the $p$-side and $n$-side of a silicon diode are $1\times 10^{16}\:cm^{-3}$ and $1\times 10^{17}\:cm^{-3},$ respectively. A forward bias of $...

Milicevic3306

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Milicevic3306 asked Mar 25, 2018

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87

GATE ECE 2014 Set 1 | Question: 38
In the circuit shown the op-amp has finite input impedance, infinite voltage gain, and zero input offset voltage. The output voltage $V_{out}$ is $-I_{2}(R_{1} + R_{2})$ $I_{2}R_{2}$ $I_{1}R_{2}$ $-I_{1}(R_{1} + R_{2})$

In the circuit shown the op-amp has finite input impedance, infinite voltage gain, and zero input offset voltage. The output voltage $V_{out}$ is $-I_{2}(R_{1} + R_{2})$$...

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Milicevic3306 asked Mar 25, 2018

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88

GATE ECE 2013 | Question: 50
Consider the following figure The current $I_{S}$ in $\text{Amps}$ in the voltage source, and voltage $V_{S}$ in Volts across the current source respectively, are $13, − 20$ $8, − 10$ $− 8, 20$ $− 13, 20$

Consider the following figure The current $I_{S}$ in $\text{Amps}$ in the voltage source, and voltage $V_{S}$ in Volts across the current source respectively, are$13, −...

Milicevic3306

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Milicevic3306 asked Mar 25, 2018

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89

GATE ECE 2013 | Question: 51
Consider the following figure The current in the $1\Omega$ resistor in $\text{Amps}$ is $2$ $3.33$ $10$ $12$

Consider the following figure The current in the $1\Omega$ resistor in $\text{Amps}$ is$2$$3.33$ $10$ $12$

Milicevic3306

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Milicevic3306 asked Mar 25, 2018

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90

GATE ECE 2013 | Question: 44
Three capacitors $C_{1}, C_{2}$ and $C_{3}$ whose values are $10\mu F, 5\mu F,$ and $2\mu F$ respectively, have breakdown voltages of $10V, 5V,$ and $2V$ respectively. For the interconnection shown below, the maximum safe voltage in Volts that can be ... capacitance across the terminals are respectively, $2.8$ and $36$ $7$ and $119$ $2.8$ and $32$ $7$ and $80$

Three capacitors $C_{1}, C_{2}$ and $C_{3}$ whose values are $10\mu F, 5\mu F,$ and $2\mu F$ respectively, have breakdown voltages of $10V, 5V,$ and $2V$ respectively. Fo...

Milicevic3306

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Milicevic3306 asked Mar 25, 2018

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91

GATE ECE 2013 | Question: 46
In the circuit shown below, the silicon $npn$ transistor $Q$ has a very high value of $\beta.$ The required value of $R_{2}$ in $k\Omega$ to produce $I_{C} = 1\: mA$ is $20$ $30$ $40$ $50$

In the circuit shown below, the silicon $npn$ transistor $Q$ has a very high value of $\beta.$ The required value of $R_{2}$ in $k\Omega$ to produce $I_{C} = 1\: mA$ is$2...

Milicevic3306

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Milicevic3306 asked Mar 25, 2018

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92

GATE ECE 2013 | Question: 41
In the circuit shown below the $\text{op-amps}$ are ideal. Then $V_{\text{out}}$ in $\text{Volts}$ is $4$ $6$ $8$ $10$

In the circuit shown below the $\text{op-amps}$ are ideal. Then $V_{\text{out}}$ in $\text{Volts}$ is$4$$6$$8$$10$

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Milicevic3306 asked Mar 25, 2018

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93

GATE ECE 2013 | Question: 35
The ac schematic of an $NMOS$ common-source stage is shown in the figure below, where part of the biasing circuits has been omitted for simplicity. For the $n$-channel $MOSFET\: M,$ the transconductance $g_{m} = 1\; mA/V,$ and body effect and ... effect are to be neglected. The lower cutoff frequency in $Hz$ of the circuit is approximately at $8$ $32$ $50$ $200$

The ac schematic of an $NMOS$ common-source stage is shown in the figure below, where part of the biasing circuits has been omitted for simplicity. For the $n$-channel $...

Milicevic3306

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Milicevic3306 asked Mar 25, 2018

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94

GATE ECE 2013 | Question: 34
The small-signal resistance $(i.e., dV_{B}/dI_{D})$ in $k\Omega$ offered by the $n$-channel $MOSFET\: M$ shown in the figure below, at a bias point of $V_{B} = 2\: V$ is (device data for $M:$ ... $V_{TN} = 1\: V,$ and neglect body effect and channel length modulation effects) $12.5$ $25$ $50$ $100$

The small-signal resistance $(i.e., dV_{B}/dI_{D})$ in $k\Omega$ offered by the $n$-channel $MOSFET\: M$ shown in the figure below, at a bias point of $V_{B} = 2\: V$ is ...

Milicevic3306

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Milicevic3306 asked Mar 25, 2018

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95

GATE ECE 2013 | Question: 31
The following arrangement consists of an ideal transformer and an attenuator which attenuates by a factor of $0.8.$ An ac voltage $V_{WX1} = 100V$ is applied across $WX$ to get an open circuit voltage $V_{YZ1}$ across $YZ.$ Next, an ac voltage $V_{YZ2}= 100V$ is ... , $125/100$ and $80/100$ $100/100$ and $80/100$ $100/100$ and $100/100$ $80/100$ and $80/100$

The following arrangement consists of an ideal transformer and an attenuator which attenuates by a factor of $0.8.$ An ac voltage $V_{WX1} = 100V$ is applied across $WX$ ...

Milicevic3306

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Milicevic3306 asked Mar 25, 2018

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96

GATE ECE 2013 | Question: 30
In the circuit shown below, the knee current of the ideal Zener diode is $10\: mA.$ To maintain $5\: V$ across $R_{L},$ the minimum value of $R_{L}$ in $\Omega$ and the minimum power rating of the Zener diode in $mW,$ respectively, are $125$ and $125$ $125$ and $250$ $250$ and $125$ $250$ and $250$

In the circuit shown below, the knee current of the ideal Zener diode is $10\: mA.$ To maintain $5\: V$ across $R_{L},$ the minimum value of $R_{L}$ in $\Omega$ and the m...

Milicevic3306

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Milicevic3306 asked Mar 25, 2018

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97

GATE ECE 2013 | Question: 24
The return loss of a device is found to be $20\:dB.$ The voltage standing wave ratio (VSWR) and magnitude of reflection coefficient are respectively $1.22$ and $0.1$ $0.81$ and $0.1$ $-1.22$ and $0.1$ $2.44$ and $0.2$

The return loss of a device is found to be $20\:dB.$ The voltage standing wave ratio (VSWR) and magnitude of reflection coefficient are respectively $1.22$ and $0.1$$0.81...

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98

GATE ECE 2013 | Question: 17
In a MOSFET operating in the saturation region, the channel length modulation effect causes an increase in the gate-source capacitance a decrease in the transconductance a decrease in the unity-gain cutoff frequency a decrease in the output resistance

In a MOSFET operating in the saturation region, the channel length modulation effect causes an increase in the gate-source capacitancea decrease in the transconductance a...

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99

GATE ECE 2013 | Question: 5
In IC technology, dry oxidation (using dry oxygen) as compared to wet oxidation (using steam or water vapor) produces superior quality oxide with a higher growth rate inferior quality oxide with a higher growth rate inferior quality oxide with a lower growth rate superior quality oxide with a lower growth rate

In IC technology, dry oxidation (using dry oxygen) as compared to wet oxidation (using steam or water vapor) produces superior quality oxide with a higher growth rate inf...

Milicevic3306

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100

GATE ECE 2013 | Question: 10
In the circuit shown below what is the output voltage $(V_{\text{out}})$ if a silicon transistor $Q$ and an ideal op-amp are used? $-15\: V$ $-0.7\: V$ $+0.7\: V$ $+15\: V$

In the circuit shown below what is the output voltage $(V_{\text{out}})$ if a silicon transistor $Q$ and an ideal op-amp are used?$-15\: V$$-0.7\: V$$+0.7\: V$$+15\: V$

Milicevic3306

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101

GATE ECE 2013 | Question: 1
A bulb in a staircase has two switches, one switch being at the ground floor and the other one at the first floor. The bulb can be turned ON and also can be turned OFF by any one of the switches irrespective of the state of the other switch. The logic of switching of the bulb resembles an AND gate an OR gate an XOR gate a NAND gate

A bulb in a staircase has two switches, one switch being at the ground floor and the other one at the first floor. The bulb can be turned ON and also can be turned OFF by...

Milicevic3306

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Milicevic3306 asked Mar 25, 2018

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102

GATE ECE 2012 | Question: 53
An infinitely long uniform solid wire of radius $a$ carries a uniform dc current of density $\overrightarrow{j}$. A hole of radius $b$ (b < a) ia now drilled along the length of the wire at a distance $d$ from the center of the wire as shown ... uniform and depends only on $d$ uniform and depends only on $b$ uniform and depends only on both $b$ and $d$ non uniform

An infinitely long uniform solid wire of radius $a$ carries a uniform dc current of density $\overrightarrow{j}$.A hole of radius $b$ (b < a) ia now drilled along the len...

Milicevic3306

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103

GATE ECE 2012 | Question: 52
An infinitely long uniform solid wire of radius $a$ carries a uniform dc current of density $\overrightarrow{j}$. The magnetic field at a distance $r$ from the center of the wire is proportional to $r$ for $r\lt a$ and $\frac{1}{r^2}$ for $r\gt a$ $0$ for $r\lt a$ ... $r\lt a$ and $\frac{1}{r}$ for $r\gt a$ $0$ for $r\lt a$ and $\frac{1}{r^2}$ for $r\gt a$

An infinitely long uniform solid wire of radius $a$ carries a uniform dc current of density $\overrightarrow{j}$.The magnetic field at a distance $r$ from the center of t...

Milicevic3306

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104

GATE ECE 2012 | Question: 37
In the CMOS circuit shown, electron and hole mobilities are equal, and $M1$ and $M2$ are equally sized. The device $M1$ is in the linear region if $V_{in}\lt 1.875\:V$ $1.875\:V\lt V_{in}\lt 3.125\:V$ $V_{in}\gt 3.125\:V$ $0\lt V_{in}\lt 5\:V$

In the CMOS circuit shown, electron and hole mobilities are equal, and $M1$ and $M2$ are equally sized. The device $M1$ is in the linear region if$V_{in}\lt 1.875\:V$$1.8...

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105

GATE ECE 2012 | Question: 26
The source of a silicon ($n_i=10^{10}\:per\:cm^3$) n-channel MOS transistor has an area of $1\:sq\:\mu m$ and a depth of $1\:\mu m$. If the dopant density in the source is $10^{19}/cm^3$, the number of holes in the source region with the above volume is approximately $10^7$ $100$ $10$ $0$

The source of a silicon ($n_i=10^{10}\:per\:cm^3$) n-channel MOS transistor has an area of $1\:sq\:\mu m$ and a depth of $1\:\mu m$. If the dopant density in the source i...

Milicevic3306

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106

GATE ECE 2012 | Question: 8
The $i-v$ characteristics of the diode in the circuit given below are $i = \begin{cases} \frac{v-0.07}{500}\:A, & v\ge0.7\:V \\ \:\:\:\:\:\:\:\:0\:A, & v \lt 0.7\:V \end{cases}$ The current in the circuit is $10\:mA$ $9.3\:mA$ $6.67\:mA$ $6.2\:mA$

The $i-v$ characteristics of the diode in the circuit given below are$$i = \begin{cases} \frac{v-0.07}{500}\:A, & v\ge0.7\:V \\ \:\:\:\:\:\:\:\:0\:A, & v \lt 0.7\:V \en...

Milicevic3306

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107

GATE ECE 2012 | Question: 9
In the following figure, $C_1$ and $C_2$ are ideal capacitors. $C_1$ has been charged to $12\:V$ before the ideal switch $S$ is closed at $t=0$. The current $i(t)$ for all $t$ is zero a step function an exponentially decaying function an impulse function

In the following figure, $C_1$ and $C_2$ are ideal capacitors. $C_1$ has been charged to $12\:V$ before the ideal switch $S$ is closed at $t=0$. The current $i(t)$ for al...

Milicevic3306

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108

GATE ECE 2012 | Question: 1
The current $i_b$ through the base of a silicon $npn$ transistor is $1+0.1\cos(10000\pi t)\:mA$. At $300\:K$, the $r_\pi$ in the small signal model of the transistor is $250\:\Omega$ $27.5\:\Omega$ $25\:\Omega$ $22.5\:\Omega$

The current $i_b$ through the base of a silicon $npn$ transistor is $1+0.1\cos(10000\pi t)\:mA$. At $300\:K$, the $r_\pi$ in the small signal model of the transistor is$2...

Milicevic3306

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109

GATE ECE 2018 | Question: 44
A solar cell of area $1.0\:cm^{2},$ operating at $1.0$ sun intensity, has a short circuit current of $20\: mA$, and an open circuit voltage of $0.65\: V$. Assuming room temperature operation and thermal equivalent voltage of $26\: mV$, the open circuit voltage (in volts, correct to two decimal places) at $0.2$ sun intensity is _________.

A solar cell of area $1.0\:cm^{2},$ operating at $1.0$ sun intensity, has a short circuit current of $20\: mA$, and an open circuit voltage of $0.65\: V$. Assuming room t...

gatecse

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gatecse asked Feb 19, 2018

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110

GATE ECE 2018 | Question: 30
Red (R), Green(G) and Blue (B) Light Emitting Diodes (LEDs) were fabricated using $\text{p-n}$ junctions of three different inorganic semiconductors having different band-gaps. The built-in voltages of red,green and blue diodes are $V_{R}$, $V_{G}$ and $V_{B},$respectively. Assume donor ... $V_{R}<V_{G}<V_{B}$ $V_{R}=V_{G}=V_{B}$ $V_{R}>V_{G}<V_{B}$

Red (R), Green(G) and Blue (B) Light Emitting Diodes (LEDs) were fabricated using $\text{p-n}$ junctions of three different inorganic semiconductors having different band...

gatecse

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gatecse asked Feb 19, 2018

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111

GATE ECE 2018 | Question: 26
The circuit shown in the figure is used to provide regulated voltage $(5 V)$ across the $1\: k\Omega$ resistor. Assume that the Zener diode has a constant reverse breakdown voltage for a current range, starting from a minimum required Zener current, $I_{Z min}=2\:mA$ to its ... $10\:mW$ $100\:\Omega$ and $40\:mW$ $100\:\Omega$ and $10\:mW$ $186\:\Omega$ and $40\:mW$

The circuit shown in the figure is used to provide regulated voltage $(5 V)$ across the $1\: k\Omega$ resistor. Assume that the Zener diode has a constant reverse breakdo...

gatecse

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gatecse asked Feb 19, 2018

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112

GATE ECE 2018 | Question: 20
There are two photolithography systems: one with light source of wavelength $\lambda _{1}=156\:nm$ (System $1$) and another with light source of wavelength $\lambda _{2}=325\:nm$ (System $2$). Both photolithography systems are otherwise identical. If ... $L_{min2}$ respectively, the ratio $L_{min1}/L_{min2}$ (correct to two decimal places) is __________.

There are two photolithography systems: one with light source of wavelength $\lambda _{1}=156\:nm$ (System $1$) and another with light source of wavelength $\lambda _{2}=...

gatecse

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gatecse asked Feb 19, 2018

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113

GATE ECE 2018 | Question: 18
A $\text{p-n}$ step junction diode with a contact potential of $0.65\:V$ has a depletion width of $1\:\mu m$ at equilibrium. The forward voltage (in volts, correct to two decimal places) at which this width reduces to $0.6\:\mu m$ is __________.

A $\text{p-n}$ step junction diode with a contact potential of $0.65\:V$ has a depletion width of $1\:\mu m$ at equilibrium. The forward voltage (in volts, correct to two...

gatecse

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gatecse asked Feb 19, 2018

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114

GATE ECE 2018 | Question: 2
In the circuit shown below, the op-amp is ideal and Zener voltage of the diode is $2.5\: volts$. At the input, unit step voltage is applied, i.e. $v_{IN}\left ( t \right ) = u\left ( t \right )\:volts$. Also, at $t = 0$, the voltage across each of the ... zero. The time $t$, in milliseconds, at which the output voltage $v_{OUT}$ crosses $-10\: V$ is $2.5$ $5$ $7.5$ $10$

In the circuit shown below, the op-amp is ideal and Zener voltage of the diode is $2.5\: volts$. At the input, unit step voltage is applied, i.e. $v_{IN}\left ( t \right ...

gatecse

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gatecse asked Feb 19, 2018

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115

GATE ECE 2018 | Question: 7
In a $\text{p-n}$ junction diode at equilibrium, which one of the following statements is NOT TRUE? The hole and electron diffusion current components are in the same direction. The hole and electron drift current components are in the same ... an average, holes and electrons drift in opposite direction. On an average, electrons drift and diffuse in the same direction.

In a $\text{p-n}$ junction diode at equilibrium, which one of the following statements is NOT TRUE?The hole and electron diffusion current components are in the same dire...

gatecse

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gatecse asked Feb 19, 2018

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116

GATE ECE 2017 Set 2 | Question: 53
An electron $(q_1)$ is moving in free space with velocity $10^5$ m/s towards a stationary electron $(q_2)$ far away. The closest distance that this moving electron gets to the stationary electron before the repulsive force diverts its path is ____________$\times 10^{-8}$ ... $e=-1.6\times 10^{-19}$ C, and permittivity $\varepsilon _0=(1/36\pi)\times 10^{-9}$ F/m]

An electron $(q_1)$ is moving in free space with velocity $10^5$ m/s towards a stationary electron $(q_2)$ far away. The closest distance that this moving electron gets t...

admin

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admin asked Nov 25, 2017

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117

GATE ECE 2017 Set 2 | Question: 31
The switch in the circuit, shown in the figure, was open for a long time and is closed at $t=0$. The current $i(t)$ (in ampere) at $t=0.5$ seconds is ____________

The switch in the circuit, shown in the figure, was open for a long time and is closed at $t=0$. The current $i(t)$ (in ampere) at $t=0.5$ seconds is ____________

admin

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admin asked Nov 25, 2017

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118

GATE ECE 2017 Set 2 | Question: 39
An abrupt $pn$ junction (located at $x=0$) is uniformly doped on both $p$ and $n$ sides. The width of the depletion region is $W$ and the electric field variation in the $x$-direction is $E(x)$. Which of the following figures represents the electric field profile near the $pn$ junction?

An abrupt $pn$ junction (located at $x=0$) is uniformly doped on both $p$ and $n$ sides. The width of the depletion region is $W$ and the electric field variation in the ...

admin

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admin asked Nov 25, 2017

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119

GATE ECE 2017 Set 2 | Question: 36
A MOS capacitor is fabricated on $p$-type Si (Silicon) where the metal work function is $4.1$ eV and electron affinity of Si is $4.0$ eV. $E_C-E_F=0.9$ eV, where $E_C$ and $E_F$ are the conduction band minimum and the Fermi energy ... capacitor is $-1$ V, then the magnitude of the fixed charge at the oxide-semiconductor interface, in $nC/cm^2$, is ___________.

A MOS capacitor is fabricated on $p$-type Si (Silicon) where the metal work function is $4.1$ eV and electron affinity of Si is $4.0$ eV. $E_C-E_F=0.9$ eV, where $E_C$ an...

admin

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admin asked Nov 25, 2017

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120

GATE ECE 2017 Set 2 | Question: 13
In the figure, $D1$ is a real silicon $pn$ junction diode with a drop of $0.7V$ under forward bias condition and $D2$ is a Zener diode breakdown voltage of $-6.8V$. The input $V_{in}(t)$ is a periodic square wave of period $T$ ... $-20.5 V$ $6.1 V$ and $-21.9 V$ $7.5 V$ and $-21.2 V$ $6.1 V$ and $-22.6 V$

In the figure, $D1$ is a real silicon $pn$ junction diode with a drop of $0.7V$ under forward bias condition and $D2$ is a Zener diode breakdown voltage of $-6.8V$. The i...

admin

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admin asked Nov 23, 2017