Register

Recent questions tagged gate1995-ec

0 votes
0 answers
41
GATE ECE 1995 | Question 1.39
A $\text{PLL}$ can be used to demodulate $\text{PAM}$ signals $\text{PCM}$ signals $\text{FM}$ signals $\text{DSB-SC}$ signals
A $\text{PLL}$ can be used to demodulate$\text{PAM}$ signals$\text{PCM}$ signals$\text{FM}$ signals$\text{DSB-SC}$ signals
0 votes
0 answers
42
GATE ECE 1995 | Question 1.41
A $1.0 \; \mathrm{kHz}$ signal is flat-top sampled at the rate of $1800$ samples sec and the samples are applied to an ideal rectangular $\text{LPF}$ with cat-off frequency of $1100 \mathrm{~Hz}$ ... $800 \mathrm{~Hz}$ and $1000 \mathrm{~Hz}$ components $800 \mathrm{~Hz}, 900$ and $1000 \mathrm{~Hz}$ components
A $1.0 \; \mathrm{kHz}$ signal is flat-top sampled at the rate of $1800$ samples sec and the samples are applied to an ideal rectangular $\text{LPF}$ with cat-off frequen...
0 votes
0 answers
43
GATE ECE 1995 | Question 1.42
The signal to quantisation noise ratio in an $n$-bit $\text{PCM}$ system depends upon the sampling frequency employed is independent of the value of ' $n$ ' increases with increasing value of ' $n$ ' decreases with the increasing value of ' $n$ '
The signal to quantisation noise ratio in an $n$-bit $\text{PCM}$ systemdepends upon the sampling frequency employedis independent of the value of ' $n$ 'increases with i...
0 votes
0 answers
45
GATE ECE 1995 | Question 1.44
In the infinite plance, $y=6 \mathrm{~m}$, there exists a uniform surface charge density of $(1600 \; \pi)$ $\mu \mathrm{C} / \mathrm{m}^{2}$. The associated electric field strength is $30 \; \mathrm{iV} / \mathrm{m}$ $30 \; \mathrm{jV} / \mathrm{m}$ $30 \; \mathrm{kV} / \mathrm{m}$ $60 \; \mathrm{iV} / \mathrm{m}$
In the infinite plance, $y=6 \mathrm{~m}$, there exists a uniform surface charge density of $(1600 \; \pi)$ $\mu \mathrm{C} / \mathrm{m}^{2}$. The associated electric fie...
0 votes
0 answers
46
GATE ECE 1995 | Question 1.45
The intrinsic impedance of a lossy dielectric medium is given by $\frac{j \omega \mu}{\sigma}$ $\frac{j \omega \varepsilon}{\mu}$ $\sqrt{\frac{j \omega \mu}{\sigma+j \omega \varepsilon}}$ $\sqrt{\frac{\mu}{\varepsilon}}$
The intrinsic impedance of a lossy dielectric medium is given by$\frac{j \omega \mu}{\sigma}$$\frac{j \omega \varepsilon}{\mu}$$\sqrt{\frac{j \omega \mu}{\sigma+j \omega ...
0 votes
0 answers
47
GATE ECE 1995 | Question 1.46
An antenna, when radiating, has a highly directional radiation pattern. When the antenna is receiving, its radiation pattern is more directive is less directive is the same exhibits no directivity at all
An antenna, when radiating, has a highly directional radiation pattern. When the antenna is receiving, its radiation patternis more directiveis less directiveis the samee...
0 votes
0 answers
48
GATE ECE 1995 | Question 1.47
Copper behaves as a conductor always conductor or dielectric depending on the applied electric field strength conductor or dielectric depending on the frequency conductor or dielectric depending on the electric current density
Copper behaves as aconductor alwaysconductor or dielectric depending on the applied electric field strengthconductor or dielectric depending on the frequencyconductor or ...
0 votes
0 answers
49
GATE ECE 1995 | Question 2.1
A series $\mathrm{R}-\mathrm{L}-\mathrm{C}$ circuit has a $\mathrm{Q}$ of $100$ and an impedance of $(100+j 0) \Omega$ at its resonant angular frequency of $10^{7}$ radian $/ \mathrm{sec}$. The values of $\text{R}$ and $\text{L}$ are : $\text{R} = $______ ohms, $\text{L} = $_______ ohms.
A series $\mathrm{R}-\mathrm{L}-\mathrm{C}$ circuit has a $\mathrm{Q}$ of $100$ and an impedance of $(100+j 0) \Omega$ at its resonant angular frequency of $10^{7}$ radia...
0 votes
0 answers
50
GATE ECE 1995 | Question 2.2
A transistor having $\alpha=0.99$ and $\mathrm{V}_{\mathrm{BE}}=0.7 \mathrm{~V}$, is used in the circuit shown the figure is. The value of the collector current will be
A transistor having $\alpha=0.99$ and $\mathrm{V}_{\mathrm{BE}}=0.7 \mathrm{~V}$, is used in the circuit shown the figure is. The value of the collector current will be
0 votes
0 answers
51
GATE ECE 1995 | Question 2.3
The circuit shown the given figure, supplies power to an $8 \; \Omega$ speaker, $\text{LS}$. The values of $\mathrm{I}_{\mathrm{C}}$ and $\mathrm{V}_{\mathrm{CE}}$ for this circuit will be : $\mathrm{I}_{\mathrm{C}} = $ __________ and $\mathrm{V}_{\mathrm{CE}} = $ ____________
The circuit shown the given figure, supplies power to an $8 \; \Omega$ speaker, $\text{LS}$. The values of $\mathrm{I}_{\mathrm{C}}$ and $\mathrm{V}_{\mathrm{CE}}$ for th...
0 votes
0 answers
52
GATE ECE 1995 | Question 2.4
In the given circuit the given figure, if the voltage inputs $\mathrm{V}-$ and $\mathrm{V}+$ are to be amplified by the same amplification factor, the value of $R$ should be
In the given circuit the given figure, if the voltage inputs $\mathrm{V}-$ and $\mathrm{V}+$ are to be amplified by the same amplification factor, the value of $R$ should...
0 votes
0 answers
53
GATE ECE 1995 | Question 2.5
An $\text{npn}$ transistor under forward-active mode of operation is biased at ${I}_{C} =1 \mathrm{~mA}$, and has a total emitter-base capacitance $\mathrm{C}_{K}$ of $12 \; \mathrm{pF}$, and the base transit time $\tau_{F}$ of ... $V_{T}=26 \; \mathrm{mV}$ ]
An $\text{npn}$ transistor under forward-active mode of operation is biased at ${I}_{C} =1 \mathrm{~mA}$, and has a total emitter-base capacitance $\mathrm{C}_{K}$ of $12...
0 votes
0 answers
54
GATE ECE 1995 | Question 2.6
An $\text{RC}$-coupled amplifier is assumed to have a single-pole low frequency transfer function. The maximum lower cut-off frequency allowed for the amplifier to pass $50 \mathrm{~Hz}$ square wave with no more than $10 \%$ tilt is __________.
An $\text{RC}$-coupled amplifier is assumed to have a single-pole low frequency transfer function. The maximum lower cut-off frequency allowed for the amplifier to pass $...
0 votes
0 answers
56
GATE ECE 1995 | Question 2.8
A power amplifiers delivers $50 \mathrm{~W}$ output at $50 \%$ efficiency. The ambient temperature is $25^{\circ} \mathrm{C}$. If the maximum allowable junction temperature is $150^{\circ} \mathrm{C}$, then the maximum thermal resistance $\phi_{j c}$ that can be tolerated is _________.
A power amplifiers delivers $50 \mathrm{~W}$ output at $50 \%$ efficiency. The ambient temperature is $25^{\circ} \mathrm{C}$. If the maximum allowable junction temperatu...
0 votes
0 answers
57
GATE ECE 1995 | Question 2.9
An amplifier has an open-loop gain of $100$, and its lower-and upper-cut-off frequency of $100 \mathrm{~Hz}$ and $100 \; \mathrm{kHz}$, respectively. A feedback network with a feedback fact or of $0.99$ is connected to the amplifier. The new lower and upper-cut-off frequencies are at ________ and __________.
An amplifier has an open-loop gain of $100$, and its lower-and upper-cut-off frequency of $100 \mathrm{~Hz}$ and $100 \; \mathrm{kHz}$, respectively. A feedback network w...
0 votes
0 answers
58
GATE ECE 1995 | Question 2.10
An $n$ – channel $\text{JFET}$ has $\mathrm{I}_{\text {DSS }}=1 \mathrm{~mA}$ and $\mathrm{V}_{P}=-5 \mathrm{~V}$. Its maximum transconductance is _________.
An $n$ – channel $\text{JFET}$ has $\mathrm{I}_{\text {DSS }}=1 \mathrm{~mA}$ and $\mathrm{V}_{P}=-5 \mathrm{~V}$.Its maximum transconductance is _________.
0 votes
0 answers
59
GATE ECE 1995 | Question 3.1
(A) Fourier transform of a Gaussian function (B) Convolution of a Rectangular pulse with itself (C) Current through an inductor for a step input voltage Gaussian function Rectangular pulse Triangular pulse Ramp function Zero
(A) Fourier transform of a Gaussian function(B) Convolution of a Rectangular pulse with itself(C) Current through an inductor for a step input voltageGaussian function Re...
0 votes
0 answers
61
GATE ECE 1995 | Question 3.3
In a $\text{JFET}$ if (A) the pinch-off voltage decreases (B) the transconductance increases (C) the transit time of the carriers in the channel is reduced the channel doping is reduced the channel length is increased the conductivity of the channel increased the channel length is reduced the Gate area is reduced
In a $\text{JFET}$ if(A) the pinch-off voltage decreases(B) the transconductance increases(C) the transit time of the carriers in the channel is reducedthe channel dopin...
0 votes
0 answers
63
GATE ECE 1995 | Question 3.5
For a $\text{TTL}$ gate, match the following (A) $\mathrm{V}_{\mathrm{OH}}$ $\text{(min)}$ (B) $\mathrm{V}_{\mathrm{IH}}$ $\text{(min)}$ (C) $\mathrm{V}_{\mathrm{OL}}$ $\text{(max)}$. $2.4$ volts $1.5$ volts $0.4$ volts $2.0$ volts $0.8$ volts
For a $\text{TTL}$ gate, match the following(A) $\mathrm{V}_{\mathrm{OH}}$ $\text{(min)}$(B) $\mathrm{V}_{\mathrm{IH}}$ $\text{(min)}$(C) $\mathrm{V}_{\mathrm{OL}}$ $\tex...
0 votes
0 answers
65
GATE ECE 1995 | Question 3.7
(A) Common-collector amplifier (B) Common-emitter amplifier (C) Common-base amplifier Provides voltage gain but no current gain Provides current gain but no voltage gain Provides neither voltage nor power gain Provides neither current nor power gain Provides both voltage and current gain
(A) Common-collector amplifier(B) Common-emitter amplifier(C) Common-base amplifierProvides voltage gain but no current gainProvides current gain but no voltage gainPro...
Page: