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Recent questions tagged mos-transistor
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GATE ECE 2014 Set 2 | Question: 38
For the n-channel MOS transistor shown in the figure, the threshold voltage $V_{Th}$ is $0.8$ V. Neglect channel length modulation effects. When the drain voltage $V_{D}= 1.6 V,$ the drain current $I_{D}$ was found to be $0.5$ mA. If $V_{D}$is adjusted to be $2$ V ... the values of R and $V_{DD}$, the new value of $I_{D}$ (in mA) is $0.625$ $0.75$ $1.125$ $1.5$
For the n-channel MOS transistor shown in the figure, the threshold voltage $V_{Th}$ is $0.8$ V. Neglect channel length modulation effects. When the drain voltage $V_{D}=...
Milicevic3306
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Milicevic3306
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Mar 26, 2018
Electronic Devices
gate2014-ec-2
electronic-devices
mos-transistor
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GATE ECE 2012 | Question: 50
In the three dimensional view of a silicon n-channel MOS transistor shown below, $\delta=20\:nm$. The transistor is of width $1\: \mu m$. The depletion width formed at every p-n junction is $10\:nm$. The relative permittivities of $Si$ and $SiO_2$, respectively, are ... $0.7\:fF$ $0.7\:pF$ $0.35\:fF$ $0.24\:pF$
In the three dimensional view of a silicon n-channel MOS transistor shown below, $\delta=20\:nm$. The transistor is of width $1\: \mu m$. The depletion width formed at ev...
Milicevic3306
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Milicevic3306
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Mar 25, 2018
Analog Circuits
gate2012-ec
analog-circuits
mos-transistor
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GATE ECE 2012 | Question: 51
In the three dimensional view of a silicon n-channel MOS transistor shown below, $\delta=20\:nm$. The transistor is of width $1\: \mu m$. The depletion width formed at every p-n junction is $10\:nm$. The relative permittivities of $Si$ and $SiO_2$, respectively, are ... $2\:fF$ $7\:fF$ $2\:pF$ $7\:pF$
In the three dimensional view of a silicon n-channel MOS transistor shown below, $\delta=20\:nm$. The transistor is of width $1\: \mu m$. The depletion width formed at ev...
Milicevic3306
16.0k
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Milicevic3306
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Mar 25, 2018
Analog Circuits
gate2012-ec
analog-circuits
mos-transistor
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