Recent questions tagged mosfet

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Which one of the following processes is preferred to form the gate dielectric $(SiO_{2})$ of MOSFETs ? Sputtering Molecular beam epitaxy Wet oxidation Dry oxidation
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A MOSFET in saturation has a drain current of $1$ mA for $V_{DS} =0.5 \: V$. If the channel length modulation coefficient is $0.05 \: V^{-1}$, the output resistance (in $...
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In MOSFET fabrication, the channel length is defined during the process ofisolation oxide growthchannel stop implantationpoly-silicon gate patterninglithography step lead...
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For the MOSFETs shown in the figure, the threshold voltage $\mid V_{t} \mid= 2$ V and $K= \frac{1}{2}\mu C_{ox} ( \frac{W}{L} ) = 0.1 \: mA/V^{2}$. The value of $I_{D}$ ...
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Which of the following can be the pole-zero configuration of a phase-lag controller (lag compensator)?
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