Recent questions tagged p-n-junction / GO Electronics

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GATE ECE 2020 | Question: 34
A $pn$ junction solar cell of area $1.0\:cm^{2}$, illuminated uniformly with $100\:mW\:cm^{-2}$, has the following parameters: Efficiency $= 15\%$, open circuit voltage $= 0.7\:V$, fill factor $= 0.8$, and thickness $=200 \mu m$ ... $0.84\times 10^{19}.$ $5.57\times 10^{19}.$ $1.04\times 10^{19}.$ $83.60\times 10^{19}.$

A $pn$ junction solar cell of area $1.0\:cm^{2}$, illuminated uniformly with $100\:mW\:cm^{-2}$, has the following parameters: Efficiency $= 15\%$, open circuit voltage $...

go_editor

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go_editor asked Feb 13, 2020

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GATE ECE 2019 | Question: 49
In an ideal $pn$ junction with an ideality factor of $1$ at $T=300\:K,$ the magnitude of the reverse-bias voltage required to reach $75\%$ of its reverse saturation current, rounded off to $2$ decimal places, is ______ $mV.$ $[k=1.38 \times 10^{-23} JK^{-1}, h=6.625 \times 10^{-34} J-s, q=1.602 \times 10^{-19}C]$

In an ideal $pn$ junction with an ideality factor of $1$ at $T=300\:K,$ the magnitude of the reverse-bias voltage required to reach $75\%$ of its reverse saturation curre...

Arjun

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Arjun asked Feb 12, 2019

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GATE ECE 2016 Set 2 | Question: 36
Consider avalanche breakdown in a silicon $p^{+}n$ junction. The $n$-region is uniformly doped with a donor density $N_{D}.$ ... $N_{D}\times {V_{BR}}= \text{constant}$ $N_{D}/{V_{BR}}= \text{constant}$

Consider avalanche breakdown in a silicon $p^{+}n$ junction. The $n$-region is uniformly doped with a donor density $N_{D}.$ Assume that breakdown occurs when the magnitu...

Milicevic3306

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Milicevic3306 asked Mar 27, 2018

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GATE ECE 2016 Set 1 | Question: 36
Consider a silicon $p-n$ junction with a uniform acceptor doping concentration of $10^{17} cm^{-3}$ on the $p$-side and a uniform donor doping concentration of $10^{16}cm^{-3}$ on the $n$ ... $nC \: cm^{-2}$) in the depletion region on the $p$-side is _________

Consider a silicon $p-n$ junction with a uniform acceptor doping concentration of $10^{17} cm^{-3}$ on the $p$-side and a uniform donor doping concentration of $10^{16}cm...

Milicevic3306

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Milicevic3306 asked Mar 27, 2018

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GATE ECE 2015 Set 3 | Question: 33
The electric field profile in the depletion region of a p-n junction in equilibrium is shown in the figure. Which one of the following statements is NOT TRUE? The left side of the junction is n-type and the right side is p-type Both the n-type and p-type depletion ... $10^{16}\: cm^{-3}$

The electric field profile in the depletion region of a p-n junction in equilibrium is shown in the figure. Which one of the following statements is NOT TRUE?The left sid...

Milicevic3306

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Milicevic3306 asked Mar 27, 2018

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GATE ECE 2015 Set 1 | Question: 9
A region of negative differential resistance is observed in the current voltage characteristics of a silicon PN junction if both the P - region and the N - region are heavily doped the N - region is heavily doped compared to the P - region the P ... doped compared to the N - region an intrinsic silicon region is inserted between the P - region and the N - region

A region of negative differential resistance is observed in the current voltage characteristics of a silicon PN junction ifboth the P – region and the N – region are ...

Milicevic3306

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Milicevic3306 asked Mar 27, 2018

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GATE ECE 2015 Set 1 | Question: 33
The built-in potential of an abrupt p-n junction is $0.75$ V. If its junction capacitance $(C_J)$ at a reverse bias $(V_R)$ of $1.25 \: V$ is $5$ pF, the value of $C_J$ (in pF) when $V_R = 7.25 \: V$ is ________.

The built-in potential of an abrupt p-n junction is $0.75$ V. If its junction capacitance $(C_J)$ at a reverse bias $(V_R)$ of $1.25 \: V$ is $5$ pF, the value of $C_J$ (...

Milicevic3306

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Milicevic3306 asked Mar 27, 2018

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GATE ECE 2014 Set 2 | Question: 35
Consider an abrupt PN junction (at $T = 300 K$) shown in the figure. The depletion region width $X_{n}$ on the $N$-side of the junction is $0.2 \mu m$ and the permittivity of silicon $( \varepsilon _{gi} )$ is $1.044 \times 10^{-12} \: F/cm$. At the junction, the approximate value of the peak electric field (in $kV/cm$) is ___________.

Consider an abrupt PN junction (at $T = 300 K$) shown in the figure. The depletion region width $X_{n}$ on the $N$-side of the junction is $0.2 \mu m$ and the permittivit...

Milicevic3306

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Milicevic3306 asked Mar 26, 2018

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GATE ECE 2018 | Question: 30
Red (R), Green(G) and Blue (B) Light Emitting Diodes (LEDs) were fabricated using $\text{p-n}$ junctions of three different inorganic semiconductors having different band-gaps. The built-in voltages of red,green and blue diodes are $V_{R}$, $V_{G}$ and $V_{B},$respectively. Assume donor ... $V_{R}<V_{G}<V_{B}$ $V_{R}=V_{G}=V_{B}$ $V_{R}>V_{G}<V_{B}$

Red (R), Green(G) and Blue (B) Light Emitting Diodes (LEDs) were fabricated using $\text{p-n}$ junctions of three different inorganic semiconductors having different band...

gatecse

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gatecse asked Feb 19, 2018

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GATE ECE 2018 | Question: 18
A $\text{p-n}$ step junction diode with a contact potential of $0.65\:V$ has a depletion width of $1\:\mu m$ at equilibrium. The forward voltage (in volts, correct to two decimal places) at which this width reduces to $0.6\:\mu m$ is __________.

A $\text{p-n}$ step junction diode with a contact potential of $0.65\:V$ has a depletion width of $1\:\mu m$ at equilibrium. The forward voltage (in volts, correct to two...

gatecse

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gatecse asked Feb 19, 2018

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GATE ECE 2018 | Question: 7
In a $\text{p-n}$ junction diode at equilibrium, which one of the following statements is NOT TRUE? The hole and electron diffusion current components are in the same direction. The hole and electron drift current components are in the same ... an average, holes and electrons drift in opposite direction. On an average, electrons drift and diffuse in the same direction.

In a $\text{p-n}$ junction diode at equilibrium, which one of the following statements is NOT TRUE?The hole and electron diffusion current components are in the same dire...

gatecse

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gatecse asked Feb 19, 2018

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GATE ECE 2017 Set 2 | Question: 37
For a particular intensity of incident light on a silicon $pn$ junction solar cell, the photocurrent density $(J_L)$ is $2.5 mA/cm^2$ and the open-circuit voltage ($V_{oc}$) is $0.451$ V. Consider thermal voltage ($V_T$) to ... the incident light is increased by $20$ times, assuming that the temperature remains unchanged, $V_{oc}$ (in volts) will be ____________

For a particular intensity of incident light on a silicon $pn$ junction solar cell, the photocurrent density $(J_L)$ is $2.5 mA/cm^2$ and the open-circuit voltage ($V_{oc...

admin

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admin asked Nov 25, 2017

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GATE ECE 2017 Set 2 | Question: 39
An abrupt $pn$ junction (located at $x=0$) is uniformly doped on both $p$ and $n$ sides. The width of the depletion region is $W$ and the electric field variation in the $x$-direction is $E(x)$. Which of the following figures represents the electric field profile near the $pn$ junction?

An abrupt $pn$ junction (located at $x=0$) is uniformly doped on both $p$ and $n$ sides. The width of the depletion region is $W$ and the electric field variation in the ...

admin

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admin asked Nov 25, 2017

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GATE ECE 2017 Set 1 | Question: 38
As shown, two Silicon (Si) abrupt $p-n$ junction diodes are fabricated with uniform donor doping concentrations of $ N_{D1}=10^{14} cm^{-3} $ and $N_{D2}=10^{16}cm^{-3}$ in the $n$-regions of the diodes, and uniform acceptor ... in potentials of the diodes, the ratio $C_{2}/C_{1}$ of their reverse bias capacitance for the same applied reverse bias, is _________.

As shown, two Silicon (Si) abrupt $p-n$ junction diodes are fabricated with uniform donor doping concentrations of $ N_{D1}=10^{14} cm^{-3} $ and $N_{D2}=10^{16}cm^{-3}$ ...

admin

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admin asked Nov 17, 2017