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1081
GATE ECE 1995 | Question 1.9
The step error coefficient of a system $\mathrm{G}(\mathrm{s})=\frac{1}{(s+6)(s+1)}$ with unity feedback is $1 / 6$ $\infty$ $0$ $1$
The step error coefficient of a system $\mathrm{G}(\mathrm{s})=\frac{1}{(s+6)(s+1)}$ with unity feedback is$1 / 6$$\infty$$0$$1$
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1082
GATE ECE 1995 | Question 1.10
The final value theorem is used to find the steady-state value of the system output initial value of the system output transient behaviour of the system output none of these
The final value theorem is used to find thesteady-state value of the system outputinitial value of the system outputtransient behaviour of the system outputnone of these
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1083
GATE ECE 1995 | Question 1.11
For a second order system, damping ratio, $(\xi)$ is $0<\xi<1$, then the roots of the characteristic polynomial are real but not equal real and equal complex conjugates imaginary
For a second order system, damping ratio, $(\xi)$ is $0<\xi<1$, then the roots of the characteristic polynomial arereal but not equalreal and equalcomplex conjugatesimagi...
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1084
GATE ECE 1995 | Question 1.12
The transfer function of a linear system is the ratio of the output, $v_{0}(t)$, and input, $v_{i}(t)$ ratio of the derivatives of the output and the input ratio of the Laplace transform of the output and that of the input with all initial conditions zeros none of these
The transfer function of a linear system is theratio of the output, $v_{0}(t)$, and input, $v_{i}(t)$ratio of the derivatives of the output and the inputratio of the Lapl...
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1085
GATE ECE 1995 | Question 1.13
$e^{A t}$ can be expanded as $\sum_{k=0}^{\infty} \frac{\mathrm{A}^{k} t^{k}}{(k+1) !}$ $\sum_{k=0}^{\infty} \frac{\mathrm{A}^{k} t^{k}}{k !}$ $\sum_{k=0}^{\infty} \frac{\mathrm{A}^{k} t^{k+1}}{(k+1) !}$ $\sum_{k=0}^{\infty} \frac{\mathrm{A}^{k} t^{k+1}}{k !}$
$e^{A t}$ can be expanded as$\sum_{k=0}^{\infty} \frac{\mathrm{A}^{k} t^{k}}{(k+1) !}$$\sum_{k=0}^{\infty} \frac{\mathrm{A}^{k} t^{k}}{k !}$$\sum_{k=0}^{\infty} \frac{\ma...
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1086
GATE ECE 1995 | Question 1.14
Non-minimum phase transfer function is defined as the transfer function. which has zeros in the right-half $S$-plane which has zeros only in the left-half $S$-plane which has poles in the right-half $S$-plane which has poles in the left-half $S$-plane
Non-minimum phase transfer function is defined as the transfer function.which has zeros in the right-half $S$-planewhich has zeros only in the left-half $S$-planewhich ha...
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1087
GATE ECE 1995 | Question 1.15
The solution of $X=A(t) X(t)$, is $e^{\mathrm{At}} \cdot \mathrm{X}_{0}$ $e^{\int_{t_{a}}^{\prime} A(\tau) d \tau}. X_{0}$ $\left[I+\int_{t_{a}}^{t} \mathrm{~A}(\tau) d \tau\right] \mathrm{X}_{0}$ none of these
The solution of $X=A(t) X(t)$, is$e^{\mathrm{At}} \cdot \mathrm{X}_{0}$$e^{\int_{t_{a}}^{\prime} A(\tau) d \tau}. X_{0}$$\left[I+\int_{t_{a}}^{t} \mathrm{~A}(\tau) d \tau...
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1088
GATE ECE 1995 | Question 1.16
Let $h(t)$ be the impulse response of a linear time invariant system. Then the response of the system for any input $u(t)$ is $\int_{0}^{t} h(\tau) u(t-\tau) d \tau$ $\frac{d}{d t} \int_{0}^{t} h(\tau) u(t-\tau) d \tau$ $\left[\int_{0}^{t} h(\tau) u(t-\tau) d \tau\right]$ $\int_{0}^{t} h^{2}(\tau) u(t-\tau) d \tau$
Let $h(t)$ be the impulse response of a linear time invariant system. Then the response of the system for any input $u(t)$ is$\int_{0}^{t} h(\tau) u(t-\tau) d \tau$$\frac...
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1089
GATE ECE 1995 | Question 1.17
The probability that an electron in a metal occupies the Fermi-level at any temperature $(>0 \mathrm{~K})$ $0$ $1$ $0.5$ $1.0$
The probability that an electron in a metal occupies the Fermi-level at any temperature $(>0 \mathrm{~K})$$0$$1$$0.5$$1.0$
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1091
GATE ECE 1995 | Question 1.19
The diffusion potential across a $\text{P-N}$ junction decreases with increasing doping concentration increases with decreasing band gap does not depend on doping concentration increases with increase in doping concentrations
The diffusion potential across a $\text{P-N}$ junctiondecreases with increasing doping concentrationincreases with decreasing band gapdoes not depend on doping concentrat...
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1092
GATE ECE 1995 | Question 1.20
The break down voltage of a transistor with its base open is $\mathrm{BV}_{\mathrm{CEO}}$ and that with emitter open is $\mathrm{BV}_{\mathrm{CBO}^{ }}$ then $\mathrm{BV}_{\mathrm{CEO}}=\mathrm{BV}_{\mathrm{CBO}}$ ... $\mathrm{BV}_{\mathrm{CEO}}$ is not related to $\mathrm{BV}_{\mathrm{CBO}}$
The break down voltage of a transistor with its base open is $\mathrm{BV}_{\mathrm{CEO}}$ and that with emitter open is $\mathrm{BV}_{\mathrm{CBO}^{‘}}$ then$\mathrm{BV...
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1093
GATE ECE 1995 | Question 1.21
In a $\text{P}$ type silicon sample, the hole concentration is $2.25 \times 10^{15} / \mathrm{cm}^{3}$. If the intrinsic carrier concentration is $1.5 \times 10^{10} / \mathrm{cm}^{3}$, the electron concentration is zero $10^{10} / \mathrm{cm}^{3}$ $10^{5} / \mathrm{cm}^{3}$ $1.5 \times 10^{25} / \mathrm{cm}^{3}$.
In a $\text{P}$ type silicon sample, the hole concentration is $2.25 \times 10^{15} / \mathrm{cm}^{3}$. If the intrinsic carrier concentration is $1.5 \times 10^{10} / \m...
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1094
GATE ECE 1995 | Question 1.22
A zener diode works on the principle of tunneling of charge carriers across the junction thermionic emission diffusion of charge carriers across the junction hopping of charge carriers across the junction
A zener diode works on the principle oftunneling of charge carriers across the junctionthermionic emissiondiffusion of charge carriers across the junctionhopping of charg...
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1095
GATE ECE 1995 | Question 1.23
A $\text{BJT}$ is said to be operating in the saturation region if both the junctions are reverse biased base-emitter junction is reverse biased and base-collector junction is forward biased base-emitter junction is forward biased and base-collector junction reverse-biased both the junctions are forward biased
A $\text{BJT}$ is said to be operating in the saturation region ifboth the junctions are reverse biasedbase-emitter junction is reverse biased and base-collector junction...
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1096
GATE ECE 1995 | Question 1.24
The depletion capacitance, $\mathrm{C}_{\mathrm{J}}$, of an abrupt $\mathrm{P}-\mathrm{N}$ junction with constant doping on either side varies with reverse bias, $V_{R^{\prime}}$ as $C_{\mathrm{J}} \propto V_{\mathrm{R}}$ ... $\mathrm{C}_{\mathrm{J}} \alpha \mathrm{V}_{\mathrm{R}}^{-1 / 3}$
The depletion capacitance, $\mathrm{C}_{\mathrm{J}}$, of an abrupt $\mathrm{P}-\mathrm{N}$ junction with constant doping on either side varies with reverse bias, $V_{R^{\...
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1097
GATE ECE 1995 | Question 1.25
A change in the value of the emitter resistance, $\mathrm{R}_{\mathrm{e}^{\prime}}$ in a difference amplifier affects the difference mode gain $\mathrm{A}_{d}$ affects the common mode gain $\mathrm{A}_{c}$ affects both $\mathrm{A}_{d}$ and $\mathrm{A}_{c}$ does not affect either $\mathrm{A}_{d}$ and $\mathrm{A}_{c}$
A change in the value of the emitter resistance, $\mathrm{R}_{\mathrm{e}^{\prime}}$ in a difference amplifieraffects the difference mode gain $\mathrm{A}_{d}$affects the ...
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1098
GATE ECE 1995 | Question 1.26
The Ebers-Moll model is applicable to bipolar junction transistors $\text{NMOS}$ transistors unipolar junction transistors junction field-effect transistors
The Ebers-Moll model is applicable tobipolar junction transistors$\text{NMOS}$ transistorsunipolar junction transistorsjunction field-effect transistors
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1099
GATE ECE 1995 | Question 1.27
To obtain very high input and output impedances in a feedback amplifier, the topolomostly used is voltage-series current-series voltage-shunt current-shunt
To obtain very high input and output impedances in a feedback amplifier, the topolomostly used isvoltage-seriescurrent-seriesvoltage-shuntcurrent-shunt
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1100
GATE ECE 1995 | Question 1.28
The output of the circuit in the figure is equal to $0$ $1$ $\overline{\mathrm{A}} \mathrm{B}+\mathrm{A} \overline{\mathrm{B}}$ $\overline{(\mathrm{A} * \mathrm{~B})} * \overline{(\mathrm{A} * \mathrm{~B})}$
The output of the circuit in the figure is equal to$0$$1$$\overline{\mathrm{A}} \mathrm{B}+\mathrm{A} \overline{\mathrm{B}}$$\overline{(\mathrm{A} * \mathrm{~B})} * \over...
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1101
GATE ECE 1995 | Question 1.29
The minimum number of $\text{NAND}$ gates required to implement the Boolean function $\mathrm{A}+\mathrm{A} \overline{\mathrm{B}}+\mathrm{A} \overline{\mathrm{B}} \mathrm{C}$, is equal to zero $1$ $4$ $7$
The minimum number of $\text{NAND}$ gates required to implement the Boolean function $\mathrm{A}+\mathrm{A} \overline{\mathrm{B}}+\mathrm{A} \overline{\mathrm{B}} \mathrm...
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1102
GATE ECE 1995 | Question 1.30
A switch-tail ring counter is made by using a single $\text{D}$ flip-flop. The resulting circuit is a $\text{SR}$ flip-flop $\text{JK}$ flip-flop $\text{D}$ flip-flop $\text{T}$ flip-flop
A switch-tail ring counter is made by using a single $\text{D}$ flip-flop. The resulting circuit is a$\text{SR}$ flip-flop$\text{JK}$ flip-flop$\text{D}$ flip-flop$\text{...
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1103
GATE ECE 1995 | Question 1.31
When a $\text{CPU}$ is interrupted, it stops execution of instructions acknowledges interrupt and branches of subroutine acknowledges interrupt and continues acknowledges interrupt and waits for the next instruction from the interrupting device
When a $\text{CPU}$ is interrupted, itstops execution of instructionsacknowledges interrupt and branches of subroutineacknowledges interrupt and continuesacknowledges int...
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1104
GATE ECE 1995 | Question 1.32
The minimum number of $\text{MOS}$ transistors required to make a dynamic $\text{RAM}$ cell is $1$ $2$ $3$ $4$
The minimum number of $\text{MOS}$ transistors required to make a dynamic $\text{RAM}$ cell is$1$$2$$3$$4$
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1105
GATE ECE 1995 | Question 1.33
An $\text{R-S}$ latch is a combinatorial circuit synchronous sequential circuit one bit memory element one clock delay element
An $\text{R-S}$ latch is acombinatorial circuitsynchronous sequential circuitone bit memory elementone clock delay element
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1106
GATE ECE 1995 | Question 1.34
A $\text{‘DMA'}$ transfer implies direct transfer of data between memory and accumulator direct transfer of data between memory and I/O devices without the use of $\mu p$ transfer of data exclusively within $\mu P$ registers A fast transfer of data between $\mu P$ and $1 / O$ devices
A $\text{‘DMA'}$ transfer impliesdirect transfer of data between memory and accumulatordirect transfer of data between memory and I/O devices without the use of $\mu p$...
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1107
GATE ECE 1995 | Question 1.35
An 'Assembler' for a microprocessor is used for assembly of processors in a production line creation of new programmes using different modules translation of a program from assembly language to machine language translation of a higher level language into English text
An 'Assembler' for a microprocessor is used forassembly of processors in a production linecreation of new programmes using different modulestranslation of a program from ...
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1108
GATE ECE 1995 | Question 1.36
The image (second) channel selectivity of a super beterodync communication receiver is determined by antenna and preselector the preselector and $\text{RF}$ amplifier the preselector and $\text{IF}$ amplifier the $\text{RF}$ and $\text{IF}$ amplifier
The image (second) channel selectivity of a super beterodync communication receiver is determined byantenna and preselectorthe preselector and $\text{RF}$ amplifierthe pr...
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1109
GATE ECE 1995 | Question 1.37
For a narrow band noise with Gaussian Gradrature components, the probability density function of its envelope will be uniform Gaussian exponential Rayleigh
For a narrow band noise with Gaussian Gradrature components, the probability density function of its envelope will beuniformGaussianexponentialRayleigh
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1110
GATE ECE 1995 | Question 1.38
If the number of bits per sample in a $\text{PCM}$ system is increased from improvement in signal-to quantisation noise ratio will be $3 \mathrm{~d B}$ $6 \mathrm{~d B}$ $2 n \mathrm{~d B}$ $0 \mathrm{~d B}$
If the number of bits per sample in a $\text{PCM}$ system is increased from improvement in signal-to quantisation noise ratio will be$3 \mathrm{~d B}$$6 \mathrm{~d B}$$2...
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1111
GATE ECE 1995 | Question 1.39
A $\text{PLL}$ can be used to demodulate $\text{PAM}$ signals $\text{PCM}$ signals $\text{FM}$ signals $\text{DSB-SC}$ signals
A $\text{PLL}$ can be used to demodulate$\text{PAM}$ signals$\text{PCM}$ signals$\text{FM}$ signals$\text{DSB-SC}$ signals
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1112
GATE ECE 1995 | Question 1.40
A $\text{PAM}$ signal can be detected by using an $\text{ADC}$ an integrator a band pass filter a high pass filter
A $\text{PAM}$ signal can be detected by usingan $\text{ADC}$an integratora band pass filtera high pass filter
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1113
GATE ECE 1995 | Question 1.41
A $1.0 \; \mathrm{kHz}$ signal is flat-top sampled at the rate of $1800$ samples sec and the samples are applied to an ideal rectangular $\text{LPF}$ with cat-off frequency of $1100 \mathrm{~Hz}$ ... $800 \mathrm{~Hz}$ and $1000 \mathrm{~Hz}$ components $800 \mathrm{~Hz}, 900$ and $1000 \mathrm{~Hz}$ components
A $1.0 \; \mathrm{kHz}$ signal is flat-top sampled at the rate of $1800$ samples sec and the samples are applied to an ideal rectangular $\text{LPF}$ with cat-off frequen...
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1114
GATE ECE 1995 | Question 1.42
The signal to quantisation noise ratio in an $n$-bit $\text{PCM}$ system depends upon the sampling frequency employed is independent of the value of ' $n$ ' increases with increasing value of ' $n$ ' decreases with the increasing value of ' $n$ '
The signal to quantisation noise ratio in an $n$-bit $\text{PCM}$ systemdepends upon the sampling frequency employedis independent of the value of ' $n$ 'increases with i...
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1116
GATE ECE 1995 | Question 1.44
In the infinite plance, $y=6 \mathrm{~m}$, there exists a uniform surface charge density of $(1600 \; \pi)$ $\mu \mathrm{C} / \mathrm{m}^{2}$. The associated electric field strength is $30 \; \mathrm{iV} / \mathrm{m}$ $30 \; \mathrm{jV} / \mathrm{m}$ $30 \; \mathrm{kV} / \mathrm{m}$ $60 \; \mathrm{iV} / \mathrm{m}$
In the infinite plance, $y=6 \mathrm{~m}$, there exists a uniform surface charge density of $(1600 \; \pi)$ $\mu \mathrm{C} / \mathrm{m}^{2}$. The associated electric fie...
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1117
GATE ECE 1995 | Question 1.45
The intrinsic impedance of a lossy dielectric medium is given by $\frac{j \omega \mu}{\sigma}$ $\frac{j \omega \varepsilon}{\mu}$ $\sqrt{\frac{j \omega \mu}{\sigma+j \omega \varepsilon}}$ $\sqrt{\frac{\mu}{\varepsilon}}$
The intrinsic impedance of a lossy dielectric medium is given by$\frac{j \omega \mu}{\sigma}$$\frac{j \omega \varepsilon}{\mu}$$\sqrt{\frac{j \omega \mu}{\sigma+j \omega ...
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1118
GATE ECE 1995 | Question 1.46
An antenna, when radiating, has a highly directional radiation pattern. When the antenna is receiving, its radiation pattern is more directive is less directive is the same exhibits no directivity at all
An antenna, when radiating, has a highly directional radiation pattern. When the antenna is receiving, its radiation patternis more directiveis less directiveis the samee...
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1119
GATE ECE 1995 | Question 1.47
Copper behaves as a conductor always conductor or dielectric depending on the applied electric field strength conductor or dielectric depending on the frequency conductor or dielectric depending on the electric current density
Copper behaves as aconductor alwaysconductor or dielectric depending on the applied electric field strengthconductor or dielectric depending on the frequencyconductor or ...
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1120
GATE ECE 1995 | Question 2.1
A series $\mathrm{R}-\mathrm{L}-\mathrm{C}$ circuit has a $\mathrm{Q}$ of $100$ and an impedance of $(100+j 0) \Omega$ at its resonant angular frequency of $10^{7}$ radian $/ \mathrm{sec}$. The values of $\text{R}$ and $\text{L}$ are : $\text{R} = $______ ohms, $\text{L} = $_______ ohms.
A series $\mathrm{R}-\mathrm{L}-\mathrm{C}$ circuit has a $\mathrm{Q}$ of $100$ and an impedance of $(100+j 0) \Omega$ at its resonant angular frequency of $10^{7}$ radia...
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