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1969
GATE ECE 2020 | Question: 40
The characteristic equation of a system is $s^{3}+3s^{2}+\left ( K+2 \right )s+3K=0.$ In the root locus plot for the given system, as $K$ varies from $0$ to $\infty$, the break-away or break-in points(s) lie within $(-1, 0)$ $(-2, -1)$ $(-3, -2)$ $(-\infty, -3)$
The characteristic equation of a system is $$s^{3}+3s^{2}+\left ( K+2 \right )s+3K=0.$$ In the root locus plot for the given system, as $K$ varies from $0$ to $\infty$, t...
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1970
GATE ECE 2020 | Question: 41
The components in the circuit given below are ideal. If $R=2\:k \Omega$ and $C=1$ $\mu F$, the $-3$ dB cut-off frequency of the circuit in Hz is $14.92$ $34.46$ $59.68$ $79.58$
The components in the circuit given below are ideal. If $R=2\:k \Omega$ and $C=1$ $\mu F$, the $-3$ dB cut-off frequency of the circuit in Hz is$14.92$$34.46$$59.68$$79.5...
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1974
GATE ECE 2020 | Question: 45
The magnetic field of a uniform plane wave in vacuum is given by $\overrightarrow{H}\left ( x,y,z,t \right )=(\hat{a_{x}}+2\hat{a_{y}}+b\hat{a_{z}})\cos\left ( \omega t+3x-y-z\right ).$ The value of $b$ is ___________.
The magnetic field of a uniform plane wave in vacuum is given by $$\overrightarrow{H}\left ( x,y,z,t \right )=(\hat{a_{x}}+2\hat{a_{y}}+b\hat{a_{z}})\cos\left ( \omega t+...
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1975
GATE ECE 2020 | Question: 46
For a $2$-port network consisting of an ideal lossless transformer, the parameter $S_{21}$ (rounded off to two decimal places) for a reference impedance of $10 \Omega$, is __________.
For a $2$-port network consisting of an ideal lossless transformer, the parameter $S_{21}$ (rounded off to two decimal places) for a reference impedance of $10 \Omega$, i...
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1979
GATE ECE 2020 | Question: 51
For the solid $S$ shown below, the value of $\underset{S}{\iiint} xdxdydz$ (rounded off to two decimal places) is _______________.
For the solid $S$ shown below, the value of $\underset{S}{\iiint} xdxdydz$ (rounded off to two decimal places) is _______________.
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1980
GATE ECE 2020 | Question: 52
$X\left ( \omega \right )$ is the Fourier transform of $x(t)$ shown below. The value of $\int_{-\infty }^{\infty }\mid X \left ( \omega \right ) \mid ^{2}d \omega$ (rounded off to two decimal places) is ____________
$X\left ( \omega \right )$ is the Fourier transform of $x(t)$ shown below. The value of $\int_{-\infty }^{\infty }\mid X \left ( \omega \right ) \mid ^{2}d \omega$ (round...
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1987
GATE ECE 2019 | Question: 1
Which one of the following functions is analytic over the entire complex plane? $\ln(z)$ $e^{1/z}$ $\frac{1}{1-z}$ $\cos(z)$
Which one of the following functions is analytic over the entire complex plane?$\ln(z)$$e^{1/z}$$\frac{1}{1-z}$$\cos(z)$
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1988
GATE ECE 2019 | Question: 2
The families of curves represented by the solution of the equation $\frac{dy}{dx}=\: – \left(\frac{x}{y} \right)^n$ for $n=-1$ and $n= +1,$ respectively, are Parabolas and Circles Circles and Hyperbolas Hyperbolas and Circles Hyperbolas and Parabolas
The families of curves represented by the solution of the equation$$\frac{dy}{dx}=\: – \left(\frac{x}{y} \right)^n$$for $n=-1$ and $n= +1,$ respectively, areParabolas a...
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1993
GATE ECE 2019 | Question: 8
Which one of the following options describes correctly the equilibrium band diagram at $T=300\:K$ of a Silicon $pnn^{+}\:\:p^{++}$ configuration shown in the figure?
Which one of the following options describes correctly the equilibrium band diagram at $T=300\:K$ of a Silicon $pnn^{+}\:\:p^{++}$ configuration shown in the figure?
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1994
GATE ECE 2019 | Question: 9
The correct circuit representation of the structure shown in the figure is
The correct circuit representation of the structure shown in the figure is
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1995
GATE ECE 2019 | Question: 10
The figure shows the high-frequency C-V curve of a MOS capacitor $(\text{at}\: T=300\: K)$ with $\Phi_{ms}= 0\: V$ and no oxide charges. The flat-band, inversion, and accumulation conditions are represented, respectively, by the points $P,Q,R$ $Q,R,P$ $R,P,Q$ $Q,P,R$
The figure shows the high-frequency C-V curve of a MOS capacitor $(\text{at}\: T=300\: K)$ with $\Phi_{ms}= 0\: V$ and no oxide charges. The flat-band, inversion, and acc...
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1999
GATE ECE 2019 | Question: 14
In the circuit shown, what are the values of $F$ for $EN=0$ and $EN=1,$ respectively? $\text{0 and D}$ $\text{Hi-Z and D}$ $\text{0 and 1}$ $\text{Hi-Z and}$ $ \overline{D}$
In the circuit shown, what are the values of $F$ for $EN=0$ and $EN=1,$ respectively?$\text{0 and D}$$\text{Hi-Z and D}$$\text{0 and 1}$$\text{Hi-Z and}$ $ \overline{D}$
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2000
GATE ECE 2019 | Question: 15
In the circuit shown, $A$ and $B$ are the inputs and $F$ is the output. What is the functionality of the circuit? Latch XNOR SRAM Cell XOR
In the circuit shown, $A$ and $B$ are the inputs and $F$ is the output. What is the functionality of the circuit?LatchXNORSRAM CellXOR
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