In a semiconductor device, the Fermi-energy level is $0.35 \; \mathrm{eV}$ above the valence band energy. The effective density of states in the valence band at $T=300 \mathrm{~K}$ is $1 \times 10^{19} \mathrm{~cm}^{-3}$. The thermal equilibrium hole concentration in silicon at $400 \mathrm{~K}$ is ____________ $\times 10^{13} \mathrm{~cm}^{-3}$ (rounded off to two decimal places).
Given $\mathrm{kT}$ at $300 \mathrm{~K}$ is $0.026 \; \mathrm{eV}$.