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Common Data for Questions 71,72,73:
The figure shows the high-frequency capacitance-voltage (C-V) characteristics of a $\mathrm{Metal} / \mathrm{SiO}_{2} / \text{silicon (MOS)}$ capacitor having an area of $1 \times 10^{-4} \mathrm{~cm}^{2}$. Assume that the permittivities $\left(\varepsilon_{0} \varepsilon_{r}\right)$ of silicon and $\mathrm{SiO}_{2}$ are $1 \times 10^{-12} \mathrm{~F/cm}$ and $3.5 \times 10^{-13} \mathrm{~F/cm}$ respectively.

The gate oxide thickness in the $\text{(MOS)}$ capacitor is

1. $50 \; \mathrm{~nm}$
2. $143 \; \mathrm{~nm}$
3. $350 \; \mathrm{~nm}$
4. $1 \; \mu \mathrm{m}$