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A small concentration of minority carries is injected into a homogeneous semiconductor crystal at one point. An electric field of $10 \mathrm{~V} . \mathrm{cm}$ is applied across the crystal and this moves the minority carriers a distance of $1 \mathrm{~cm}$ is $20 \mu \mathrm{sec}$. The mobility (in $\mathrm{cm}^{2} /$ volt. sec) will be

1. 1,000
2. 2,000
3. 5,000
4. 500,000