in Others edited by
6 views
0 votes
0 votes

GATE ECE 1996 | Question-8

A $n$-channel silicon $\left(E_{g}=1.1 \mathrm{eV}\right)$ MOSFET was fabricated using $n+$ poly-silicon gate and the threshold voltage was found to be $1 \mathrm{~V}$. Now, if the gate is changed to $v^{+}$poly-silicon, other things remaining the same, the new threshold voltage should be

  1. $-0.1 \mathrm{~V}$
  2. $0 \mathrm{~V}$
  3. $1.0 \mathrm{~V}$
  4. $2.1 \mathrm{~V}$

     

in Others edited by
by
31.3k points
6 views

Please log in or register to answer this question.

Welcome to GO Electronics, where you can ask questions and receive answers from other members of the community.