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A $n$-channel silicon $\left(E_{g}=1.1 \mathrm{eV}\right)$ MOSFET was fabricated using $n+$ poly-silicon gate and the threshold voltage was found to be $1 \mathrm{~V}$. Now, if the gate is changed to $v^{+}$poly-silicon, other things remaining the same, the new threshold voltage should be

1. $-0.1 \mathrm{~V}$
2. $0 \mathrm{~V}$
3. $1.0 \mathrm{~V}$
4. $2.1 \mathrm{~V}$