A $n$ – channel silicon $\left(E_{g}=1.1 \; \mathrm{eV}\right)$ MOSFET was fabricated using $n+$ poly-silicon gate and the threshold voltage was found to be $1 \mathrm{~V}$. Now, if the gate is changed to $v^{+}$poly-silicon, other things remaining the same, the new threshold voltage should be
- $-0.1 \mathrm{~V}$
- $0 \mathrm{~V}$
- $1.0 \mathrm{~V}$
- $2.1 \mathrm{~V}$