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Recent questions tagged gate1996-ec
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GATE ECE 1996 | Question 1.1
In the given figure, $A_{1}, A_{2}$ and $A_{3}$ are ideal ammeters. If $\mathrm{A}_{2}$ and $\mathrm{A}_{3}$ read $3 \mathrm{~A}$ and $4 \mathrm{~A}$ respectvely, then $A_{1}$ should read $1 \mathrm{~A}$ $5 \mathrm{~A}$ $7 \mathrm{~A}$ None of these
In the given figure, $A_{1}, A_{2}$ and $A_{3}$ are ideal ammeters. If $\mathrm{A}_{2}$ and $\mathrm{A}_{3}$ read $3 \mathrm{~A}$ and $4 \mathrm{~A}$ respectvely, then $A...
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GATE ECE 1996 | Question 1.2
In the circuit of the given figure, assume that the diodes are ideal and the meter is an average indicating ammeter. The ammeter will read $0.4 \sqrt{2} \mathrm{~A}$ $0.4 \mathrm{~A}$ $\frac{0.8}{\pi} \mathrm{A}$ $\frac{0.4}{\pi}$
In the circuit of the given figure, assume that the diodes are ideal and the meter is an average indicating ammeter. The ammeter will read$0.4 \sqrt{2} \mathrm{~A}$$0.4 \...
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GATE ECE 1996 | Question 1.3
The number of independent loops for a network with $n$ nodes and $b$ branches is $n-1$ $b-n$ $b-n+1$ independent of the number of nodes
The number of independent loops for a network with $n$ nodes and $b$ branches is$n-1$$b-n$$b-n+1$independent of the number of nodes
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GATE ECE 1996 | Question 1.4
A lossless transmission line having $50 \; \Omega$ charateristic impedance and lengh $\lambda / 4$ is short circuited at one end and connected to an ideal voltage source of $1 \mathrm{~V}$ at the other end. The current drawn from the voltage source is $0$ $0.02 \mathrm{~A}$ $\infty$ none of these
A lossless transmission line having $50 \; \Omega$ charateristic impedance and lengh $\lambda / 4$ is short circuited at one end and connected to an ideal voltage source ...
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GATE ECE 1996 | Question 1.5
The $p$ – type substrate in a conventional $p n$ – junction isolated integrated circuit should be connected to nowhere, i.e. left floating a $dc$ ground potential the most positive potential available in the circuit the most negative potential available in the circuit
The $p$ – type substrate in a conventional $p n$ – junction isolated integrated circuit should be connected tonowhere, i.e. left floatinga $dc$ ground potentialthe mo...
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GATE ECE 1996 | Question 1.6
If a transistor is operating with both of its junctions forward biased, but with the collector base forward bias greater than the emitter-base forward bias, then it is operating in the forward active mode reverse saturation mode reverse active mode forward saturation mode
If a transistor is operating with both of its junctions forward biased, but with the collector base forward bias greater than the emitter-base forward bias, then it is op...
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GATE ECE 1996 | Question 1.7
The common-emitter short-circuit current gain $\beta$ of a transistor is a monotonically increasing function of the collector current $\mathrm{I}_{\mathrm{C}}$. is a monotonically decreasing function of $\mathrm{I}_{\mathrm{C}}$ ... decreases with further increase in $\mathrm{I}_{\mathrm{C}}$ is not a function of $\mathrm{I}_{\mathrm{C}}$
The common-emitter short-circuit current gain $\beta$ of a transistoris a monotonically increasing function of the collector current $\mathrm{I}_{\mathrm{C}}$.is a monoto...
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GATE ECE 1996 | Question 1.8
A $n$ – channel silicon $\left(E_{g}=1.1 \; \mathrm{eV}\right)$ MOSFET was fabricated using $n+$ poly-silicon gate and the threshold voltage was found to be $1 \mathrm{~V}$. Now, if the gate is changed to $v^{+}$poly-silicon, other things remaining the same, the new threshold voltage should be $-0.1 \mathrm{~V}$ $0 \mathrm{~V}$ $1.0 \mathrm{~V}$ $2.1 \mathrm{~V}$
A $n$ – channel silicon $\left(E_{g}=1.1 \; \mathrm{eV}\right)$ MOSFET was fabricated using $n+$ poly-silicon gate and the threshold voltage was found to be $1 \mathrm{...
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GATE ECE 1996 | Question 1.9
The circuit shown in the figure is that of a non-inverting amplifier an inverting amplifier an oscillator a Schmitt Trigger
The circuit shown in the figure is that ofa non-inverting amplifieran inverting amplifieran oscillatora Schmitt Trigger
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GATE ECE 1996 | Question 1.10
Schottky clamping is resorted in $\text{TTL}$ gates to reduce propagation delay to increase noise margins to increase packing density to increase fan-out
Schottky clamping is resorted in $\text{TTL}$ gatesto reduce propagation delayto increase noise marginsto increase packing densityto increase fan-out
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GATE ECE 1996 | Question 1.11
A pulse train can be delayed by a finite number of clock periods using a serial-in serial-out shift register a serial-in parallel-out shift register a parallel-in serial-out shift register a paralel-in parallel-out shift register
A pulse train can be delayed by a finite number of clock periods usinga serial-in serial-out shift registera serial-in parallel-out shift registera parallel-in serial-out...
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GATE ECE 1996 | Question 1.12
A $12$ – bit $\text{ADC}$ is operating with a $1 \; \mu \; \mathrm{sec}$ clock period and the total conversion time is seen to be $14 \; \mu \;\mathrm{sec}$. The $\text{ADC}$ must be of the Flash type counting type integrating type successive approximation type
A $12$ – bit $\text{ADC}$ is operating with a $1 \; \mu \; \mathrm{sec}$ clock period and the total conversion time is seen to be $14 \; \mu \;\mathrm{sec}$. The $\text...
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GATE ECE 1996 | Question 1.13
The total number of memory accesses involved (inclusive of the $op$ – code fetch) when an $8085$ processor executes the instruction $\text{LDA}$ $2003$ is $1$ $2$ $3$ $4$
The total number of memory accesses involved (inclusive of the $op$ – code fetch) when an $8085$ processor executes the instruction $\text{LDA}$ $2003$ is$1$$2$$3$$4$
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GATE ECE 1996 | Question 1.14
The trigonometric Fourier series of an even function of time does not have the $d c$ term cosine terms sine terms odd harmonic terms
The trigonometric Fourier series of an even function of time does not have the$d c$ termcosine termssine termsodd harmonic terms
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GATE ECE 1996 | Question 1.15
The Fourier transform of a real-valued time signal has odd symmetry even symmetry conjugate symmetry no symmetry
The Fourier transform of a real-valued time signal hasodd symmetryeven symmetryconjugate symmetryno symmetry
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GATE ECE 1996 | Question 1.16
A rectangular pulse of duration $T$ is applied to a filter matched to this input. The output of the filter is a rectangular pulse of duration $T$ rectangular pulse of duration $2 \mathrm{~T}$ triangular pulse sine function
A rectangular pulse of duration $T$ is applied to a filter matched to this input. The output of the filter is arectangular pulse of duration $T$rectangular pulse of durat...
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GATE ECE 1996 | Question 1.17
The image channel rejection in a superheterodyne receiver comes from $\text{IF}$ stages only $\text{RF}$ stages only detector and $\text{RF}$ stages only detector $\text{RF}$, and $\text{IF}$ stages
The image channel rejection in a superheterodyne receiver comes from$\text{IF}$ stages only$\text{RF}$ stages onlydetector and $\text{RF}$ stages onlydetector $\text{RF}$...
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GATE ECE 1996 | Question 1.18
The capacitance per unit length and the characteristic impedance of a lossless transmission line are $\mathrm{C}$ and $\mathrm{Zo}$ respectively. The velocity of a travelling wave on the transmission line $Z_{0} C$ $\frac{1}{\mathrm{Z}_{\mathrm{o}} \mathrm{C}}$ $\frac{Z_{0}}{C}$ $\frac{\mathrm{C}}{\mathrm{Z}_{0}}$
The capacitance per unit length and the characteristic impedance of a lossless transmission line are $\mathrm{C}$ and $\mathrm{Zo}$ respectively. The velocity of a travel...
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GATE ECE 1996 | Question 1.19
A transverse electromagnetic wave with circular polarisation is received by a dipole antenna. Due to polarisation mismatch, the power transfer efficiency from the wave to the antenna is reduced to about $50 \%$ $35.3 \%$ $25 \%$ $0 \%$
A transverse electromagnetic wave with circular polarisation is received by a dipole antenna. Due to polarisation mismatch, the power transfer efficiency from the wave to...
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GATE ECE 1996 | Question 1.20
A metal sphere with $1 \mathrm{~m}$ radius and a surface charge density of $10 \; \mathrm{Coulombs / m}^{2}$ is enclosed in a cube of $10 \mathrm{~m}$ side. The total outward electric displacement normal to the surface of the cube is $40 \pi$ Coulombs $10 \pi$ Coulombs $5 \pi$ Couloms None of these
A metal sphere with $1 \mathrm{~m}$ radius and a surface charge density of $10 \; \mathrm{Coulombs / m}^{2}$ is enclosed in a cube of $10 \mathrm{~m}$ side. The total out...
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GATE ECE 1996 | Question 1.21
In the circuit shown in the given figure $\mathrm{N}$ is a finite gain amplifier with a gain of $k$, a very large input impedance, and a very low output impedance. The input impedance of the feedback amplifier with the feedback impedance $\mathrm{Z}$ connected as shown will be $\mathrm{Z}\left(1-\frac{1}{k}\right)$ $Z(1-k)$ $\frac{\mathrm{Z}}{(k-1)}$ $\frac{Z}{(1-k)}$
In the circuit shown in the given figure $\mathrm{N}$ is a finite gain amplifier with a gain of $k$, a very large input impedance, and a very low output impedance. The in...
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GATE ECE 1996 | Question 2.2
The inverse Laplace transform of the function $\frac{s+5}{(s+1)(s+3)}$ is $2 e^{-t}-e^{-3 t}$ $2 e^{-t}+e^{-3 t}$ $e^{-t}-2 e^{-3 t}$ $e^{-t}+e^{-3 t}$
The inverse Laplace transform of the function$\frac{s+5}{(s+1)(s+3)}$ is$2 e^{-t}-e^{-3 t}$$2 e^{-t}+e^{-3 t}$$e^{-t}-2 e^{-3 t}$$e^{-t}+e^{-3 t}$
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GATE ECE 1996 | Question 2.3
The voltages $\mathrm{V}_{\mathrm{C} 1}, \mathrm{~V}_{\mathrm{C} 2}$, and $\mathrm{V}_{\mathrm{C} 3}$ across the capacitors in the circuit in the given figure, under steady state, are respectively. $80 \mathrm{~V}, 32 \mathrm{~V}, 48 \mathrm{~V}$ ... $20 \mathrm{~V}, 8 \mathrm{~V}, 12 \mathrm{~V}$ $20 \mathrm{~V}, 12 \mathrm{~V}, 8 \mathrm{~V}$
The voltages $\mathrm{V}_{\mathrm{C} 1}, \mathrm{~V}_{\mathrm{C} 2}$, and $\mathrm{V}_{\mathrm{C} 3}$ across the capacitors in the circuit in the given figure, under stea...
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GATE ECE 1996 | Question 2.4
A uniform plane wave in air is normally incident on infinitely thick slab. If the refractive index of the glass slab is $1.5$, then the percentage of incident power that is reflected from the air-glass interface is $0 \%$ $4 \%$ $20 \%$ $100 \%$
A uniform plane wave in air is normally incident on infinitely thick slab. If the refractive index of the glass slab is $1.5$, then the percentage of incident power that ...
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GATE ECE 1996 | Question 2.5
In a bipolar transistor at room temperature, if the emitter current is doubled the voltage across its base-emitter junction doubles halves increases by about $20 \; \mathrm{mV}$ decreases by about $20 \; \mathrm{mV}$
In a bipolar transistor at room temperature, if the emitter current is doubled the voltage across its base-emitter junctiondoubleshalvesincreases by about $20 \; \mathrm{...
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GATE ECE 1996 | Question 2.6
An $\text{npn}$ transistor has a beta cut-off frequency $f \beta$ of $1 \; \mathrm{MHz}$, and common emitter short circuit low frequency current gain $\beta \mathrm{O}$ of $200$. It unity gain frequency $f \mathrm{T}$ and the alpha cut-off frequency $f \alpha$ ... $199 \;\mathrm{MHz}, 200 \; \mathrm{MHz}$ $201 \; \mathrm{MHz}, 200 \; \mathrm{MHz}$
An $\text{npn}$ transistor has a beta cut-off frequency $f \beta$ of $1 \; \mathrm{MHz}$, and common emitter short circuit low frequency current gain $\beta \mathrm{O}$ o...
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GATE ECE 1996 | Question 2.7
A silicon $n$ $\text{MOSFET}$ has a threshold voltage of $1$ $\mathrm{V}$ and oxide thickness of $\mathrm{AO}$. $\left[\varepsilon_{r}\left(\mathrm{siO}_{2}\right)=3.9, \varepsilon_{\mathrm{o}}=8.854 \times 10^{-14} \mathrm{~F} / \mathrm{cm}\right.$ ... $5.4 \times 10^{11} / \mathrm{cm}^{2}, p$-type $5.4 \times 10^{11} / \mathrm{cm}^{2}, n$-type
A silicon $n$ $\text{MOSFET}$ has a threshold voltage of $1$ $\mathrm{V}$ and oxide thickness of $\mathrm{AO}$.$\left[\varepsilon_{r}\left(\mathrm{siO}_{2}\right)=3.9, \v...
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GATE ECE 1996 | Question 2.8
A Darlington stage is shown in the figure is. If the transconductance of $Q_{1}$ is $g_{m 1}$ and $Q_{2}$ is $g_{m 2}$, then the overall transconductance $g_{m c}\left[\triangleq \frac{i_{c}^{c}}{v_{b c}^{c}}\right]$ is given by $g_{m 1}$ $0.5 \; g_{\text {m } 1}$ $g_{m 2}$ $0.5 \; g_{m 2}$
A Darlington stage is shown in the figure is. If the transconductance of $Q_{1}$ is $g_{m 1}$ and $Q_{2}$ is $g_{m 2}$, then the overall transconductance $g_{m c}\left[\t...
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GATE ECE 1996 | Question 2.9
Value of $R$ in the oscillator circuit shown in the given figure, so chosen that it just oscillates at an angular frequency of $\omega$. The value of $\omega$ and the required value of $R$ ... $10^{5} \; \mathrm{rad} / \mathrm{sec}, 10^{5} \; \Omega$
Value of $R$ in the oscillator circuit shown in the given figure, so chosen that it just oscillates at an angular frequency of $\omega$. The value of $\omega$ and the req...
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GATE ECE 1996 | Question 2.10
A Zener diode in the circuit shown in the figure is has a knee current of $5 \mathrm{~mA}$, and a maximum allowed power dissipation of $300 \mathrm{~mW}$. What are the minimum and maximum load currents that can be drawn safely from the circuit, keeping the output voltage ... $10 \mathrm{~mA}, 55 \mathrm{~mA}$ $60 \mathrm{~mA}, 180 \mathrm{~mA}$
A Zener diode in the circuit shown in the figure is has a knee current of $5 \mathrm{~mA}$, and a maximum allowed power dissipation of $300 \mathrm{~mW}$. What are the mi...
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GATE ECE 1996 | Question 2.11
A dynamic $\text{RAM}$ cell which hold $5 \mathrm{~V}$ has to be refreshed every $20 \mathrm{~m}$ secs, so that the stored voltage does not fall by more than $0.5 \mathrm{~V}$. If the cell has a constant discharge current of $0.1 \; \mathrm{pA}$, the storage capacitance ... $4 \times 10^{-9} \mathrm{~F}$ $4 \times 10^{-12} \mathrm{~F}$ $4 \times 10^{-15} \mathrm{~F}$
A dynamic $\text{RAM}$ cell which hold $5 \mathrm{~V}$ has to be refreshed every $20 \mathrm{~m}$ secs, so that the stored voltage does not fall by more than $0.5 \mathrm...
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GATE ECE 1996 | Question 2.12
A $10$ - bit $\text{ADC}$ with a full scale output voltage of $10.24 \mathrm{~V}$ is designed to have $\mathrm{a} \pm \mathrm{LSB} / 2$ accuracy. If the $\mathrm{ADC}$ is calibrated at $25^{\circ} \mathrm{C}$ ... $\pm 800 \; \mu \; \mathrm{V} /{ }^{\circ} \mathrm{C}$
A $10$ - bit $\text{ADC}$ with a full scale output voltage of $10.24 \mathrm{~V}$ is designed to have $\mathrm{a} \pm \mathrm{LSB} / 2$ accuracy. If the $\mathrm{ADC}$ is...
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GATE ECE 1996 | Question 2.13
A memory system of size $26 \mathrm{~K}$ bytes is required to be designed using memory chips which have $12$ address lines and $4$ data lines each. The number of such chips required to design the memory system is $2$ $4$ $8$ $16$
A memory system of size $26 \mathrm{~K}$ bytes is required to be designed using memory chips which have $12$ address lines and $4$ data lines each. The number of such chi...
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GATE ECE 1996 | Question 2.14
The following sequence of instructions are executed by an $8085$ microprocessor: $\begin{matrix} 1000 &LXI & SP &27 \; FF \\ 1000 &CALL & & 1006\\ 1006 &POP \; H & & \end{matrix}$ ... $\mathrm{SP}=27 \; \mathrm{FF}, \mathrm{HL}=1006$ $\mathrm{SP}=27 \; \mathrm{FD}, \mathrm{HL}=1006$
The following sequence of instructions are executed by an $8085$ microprocessor:$\begin{matrix}1000 &LXI & SP &27 \; FF \\ 1000 &CALL & & 1006\\ 1006 &POP \; H & & \...
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GATE ECE 1996 | Question 2.15
The number of bits in a binary $\mathrm{PCM}$ system is increased from $n$ to $n+1$. As a result, the signal to quantization noise ratio will improve by a factor $\frac{n+1}{n}$ $2^{(n+1) / n}$ $2^{2(n+1) / n}$ which is independent of $n$
The number of bits in a binary $\mathrm{PCM}$ system is increased from $n$ to $n+1$. As a result, the signal to quantization noise ratio will improve by a factor$\frac{n+...
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GATE ECE 1996 | Question 2.16
The autocorrelation function of an energy signal has no symmetry conjugate symmetry odd symmetry even symmetry
The autocorrelation function of an energy signal hasno symmetryconjugate symmetryodd symmetryeven symmetry
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GATE ECE 1996 | Question 2.17
An $\text{FM}$ signal with a modulation index $9$ is applied to a frequency tripler. The modulation index in the output signal will be $0$ $3$ $9$ $27$
An $\text{FM}$ signal with a modulation index $9$ is applied to a frequency tripler. The modulation index in the output signal will be$0$$3$$9$$27$
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GATE ECE 1996 | Question 2.18
The critical frequency of an ionospheric layer is $10 \; \mathrm{MHz}$. What is the maximum launching angle from the horizon for which $20 \; \mathrm{MHz}$ wave will be reflected by the layer? $0^{\circ}$ $30^{\circ}$ $45^{\circ}$ $90^{\circ}$
The critical frequency of an ionospheric layer is $10 \; \mathrm{MHz}$. What is the maximum launching angle from the horizon for which $20 \; \mathrm{MHz}$ wave will be r...
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GATE ECE 1996 | Question 2.19
A $1 \mathrm{~km}$ long microwave link uses two antennas each having $30 \mathrm{~dB}$ gain. If the power transmitted by one antenna is $1 \mathrm{~W}$ at $3 \; \mathrm{GHz}$, the power received by the other antenna is approximately $98.6 \; \mu \mathrm{W}$ $76.8 \; \mu \mathrm{W}$ $63.4 \; \mu \mathrm{W}$ $55.2 \; \mu W$
A $1 \mathrm{~km}$ long microwave link uses two antennas each having $30 \mathrm{~dB}$ gain. If the power transmitted by one antenna is $1 \mathrm{~W}$ at $3 \; \mathrm{G...
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GATE ECE 1996 | Question 2.20
Some unknown material has a conductivity of $10^{6} \; \mathrm{mho} / \mathrm{m}$ and a permeability of $4 \pi \times 10^{-7} \; \mathrm{H} / \mathrm{m}$. The skin depth for the material at $1 \; \mathrm{GHz}$ is $15.9 \; \mu \mathrm{m}$ $20.9 \; \mu \mathrm{m}$ $25.9 \; \mu \mathrm{m}$ $30.9 \; \mu \mathrm{m}$
Some unknown material has a conductivity of $10^{6} \; \mathrm{mho} / \mathrm{m}$ and a permeability of $4 \pi \times 10^{-7} \; \mathrm{H} / \mathrm{m}$. The skin depth ...
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