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An $\text{npn}$ transistor under forward-active mode of operation is biased at ${ 1}_{C} =1 \mathrm{~mA}$, and has a total emitter-base capacitance $\mathrm{C}_{K}$ of $12 \mathrm{pF}$, and the base transit time $\tau_{F}$ of $260 \mathrm{psec}$. Under this condition, the depetion capacitance of the emitter-base junction is $\dots$ [use $V_{T}=26 \mathrm{mV}$ ]