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Recent questions tagged gate1995-ec

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GATE ECE 1995 | Question 3.8
(A) $\text{AM}$ system (B) $\text{DSB-SC}$ system (C) $\text{PAM}$ system Coherent detection Envelope detection Correlation detection $\text{PLL}$ $\text{LPF}$
(A) $\text{AM}$ system(B) $\text{DSB-SC}$ system(C) $\text{PAM}$ systemCoherent detectionEnvelope detectionCorrelation detection$\text{PLL}$$\text{LPF}$
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GATE ECE 1995 | Question 1.1
A $\text{DC}$ voltage source is connected across a series $\text{R-L-C}$ circuit. Under steady-state conditions, the applied $\text{DC}$ voltage drops entirely across the $R$ only $L$ only $C$ only $\mathrm{R}$ and $\mathrm{L}$ combination
A $\text{DC}$ voltage source is connected across a series $\text{R-L-C}$ circuit. Under steady-state conditions, the applied $\text{DC}$ voltage drops entirely across the...
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GATE ECE 1995 | Question 1.2
Consider a $\text{DC}$ voltage source connected to a series $\mathrm{R}-\mathrm{C}$ circuit. When the steady-state reaches, the ratio of the energy stored in the capacitor to the total energy supplied by the voltage source, is equal to $0.362$ $0.500$ $0.632$ $1,000$
Consider a $\text{DC}$ voltage source connected to a series $\mathrm{R}-\mathrm{C}$ circuit. When the steady-state reaches, the ratio of the energy stored in the capacito...
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GATE ECE 1995 | Question 1.3
Two $2 \; \mathrm{H}$ inductance coils are connected in series and are also magnetically coupled to each other the coefficient of coupling being $0.1$. The total inductance of the combination can be $0.4 \; \mathrm{H}$ $3.2 \; \mathrm{H}$ $4.0 \; \mathrm{H}$ $3.3 \; \mathrm{H}$
Two $2 \; \mathrm{H}$ inductance coils are connected in series and are also magnetically coupled to each other the coefficient of coupling being $0.1$. The total inductan...
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GATE ECE 1995 | Question 1.4
The $\text{RMS}$ value of a rectangular wave of period $T$, having a value of $+V$ for a duration, $T_1(<T)$ and $-V$ for the duration, $T-T_1=T_2$, equals $\mathrm{V}$ $\frac{\mathrm{T}_1-\mathrm{T}_2}{\mathrm{~T}} \mathrm{~V}$ $\frac{\mathrm{V}}{\sqrt{2}}$ $\frac{\mathrm{T}_1}{\mathrm{~T}_2} \mathrm{~V}$
The $\text{RMS}$ value of a rectangular wave of period $T$, having a value of $+V$ for a duration, $T_1(<T)$ and $-V$ for the duration, $T-T_1=T_2$, equals$\mathrm{V}$$\f...
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GATE ECE 1995 | Question 1.5
If $L[f(t)]=\frac{2(s+1)}{s^{2}+2 s+5}$ then $f(0+)$ and $f(\infty)$ are given by $0, 2$ respectively $2, 0$ respectively $0,1$ respectively $2/5, 0$ respectively [Note : 'L' stands for 'Laplace Transform of']
If $L[f(t)]=\frac{2(s+1)}{s^{2}+2 s+5}$ then $f(0+)$ and $f(\infty)$ are given by$0, 2$ respectively$2, 0$ respectively$0,1$ respectively$2/5, 0$ respectively[Note : 'L' ...
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GATE ECE 1995 | Question 1.6
The value of the resistance, $R$, connected across the terminals, $A$ and $B$, which will absorb the maximum power, is . $4.00 \; \mathrm{k} \Omega$ $4.11 \; \mathrm{k} \Omega$ $8.00 \; \mathrm{k} \Omega$ $9.00 \; \mathrm{k} \Omega$
The value of the resistance, $R$, connected across the terminals, $A$ and $B$, which will absorb the maximum power, is. $4.00 \; \mathrm{k} \Omega$$4.11 \; \mathrm{k} \Om...
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GATE ECE 1995 | Question 1.8
Signal flow graph is used to find stability of the system controllability of the system transfer function of the system poles of the system
Signal flow graph is used to findstability of the systemcontrollability of the systemtransfer function of the systempoles of the system
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GATE ECE 1995 | Question 1.9
The step error coefficient of a system $\mathrm{G}(\mathrm{s})=\frac{1}{(s+6)(s+1)}$ with unity feedback is $1 / 6$ $\infty$ $0$ $1$
The step error coefficient of a system $\mathrm{G}(\mathrm{s})=\frac{1}{(s+6)(s+1)}$ with unity feedback is$1 / 6$$\infty$$0$$1$
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GATE ECE 1995 | Question 1.10
The final value theorem is used to find the steady-state value of the system output initial value of the system output transient behaviour of the system output none of these
The final value theorem is used to find thesteady-state value of the system outputinitial value of the system outputtransient behaviour of the system outputnone of these
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GATE ECE 1995 | Question 1.11
For a second order system, damping ratio, $(\xi)$ is $0<\xi<1$, then the roots of the characteristic polynomial are real but not equal real and equal complex conjugates imaginary
For a second order system, damping ratio, $(\xi)$ is $0<\xi<1$, then the roots of the characteristic polynomial arereal but not equalreal and equalcomplex conjugatesimagi...
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GATE ECE 1995 | Question 1.12
The transfer function of a linear system is the ratio of the output, $v_{0}(t)$, and input, $v_{i}(t)$ ratio of the derivatives of the output and the input ratio of the Laplace transform of the output and that of the input with all initial conditions zeros none of these
The transfer function of a linear system is theratio of the output, $v_{0}(t)$, and input, $v_{i}(t)$ratio of the derivatives of the output and the inputratio of the Lapl...
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GATE ECE 1995 | Question 1.13
$e^{A t}$ can be expanded as $\sum_{k=0}^{\infty} \frac{\mathrm{A}^{k} t^{k}}{(k+1) !}$ $\sum_{k=0}^{\infty} \frac{\mathrm{A}^{k} t^{k}}{k !}$ $\sum_{k=0}^{\infty} \frac{\mathrm{A}^{k} t^{k+1}}{(k+1) !}$ $\sum_{k=0}^{\infty} \frac{\mathrm{A}^{k} t^{k+1}}{k !}$
$e^{A t}$ can be expanded as$\sum_{k=0}^{\infty} \frac{\mathrm{A}^{k} t^{k}}{(k+1) !}$$\sum_{k=0}^{\infty} \frac{\mathrm{A}^{k} t^{k}}{k !}$$\sum_{k=0}^{\infty} \frac{\ma...
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GATE ECE 1995 | Question 1.14
Non-minimum phase transfer function is defined as the transfer function. which has zeros in the right-half $S$-plane which has zeros only in the left-half $S$-plane which has poles in the right-half $S$-plane which has poles in the left-half $S$-plane
Non-minimum phase transfer function is defined as the transfer function.which has zeros in the right-half $S$-planewhich has zeros only in the left-half $S$-planewhich ha...
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GATE ECE 1995 | Question 1.15
The solution of $X=A(t) X(t)$, is $e^{\mathrm{At}} \cdot \mathrm{X}_{0}$ $e^{\int_{t_{a}}^{\prime} A(\tau) d \tau}. X_{0}$ $\left[I+\int_{t_{a}}^{t} \mathrm{~A}(\tau) d \tau\right] \mathrm{X}_{0}$ none of these
The solution of $X=A(t) X(t)$, is$e^{\mathrm{At}} \cdot \mathrm{X}_{0}$$e^{\int_{t_{a}}^{\prime} A(\tau) d \tau}. X_{0}$$\left[I+\int_{t_{a}}^{t} \mathrm{~A}(\tau) d \tau...
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GATE ECE 1995 | Question 1.16
Let $h(t)$ be the impulse response of a linear time invariant system. Then the response of the system for any input $u(t)$ is $\int_{0}^{t} h(\tau) u(t-\tau) d \tau$ $\frac{d}{d t} \int_{0}^{t} h(\tau) u(t-\tau) d \tau$ $\left[\int_{0}^{t} h(\tau) u(t-\tau) d \tau\right]$ $\int_{0}^{t} h^{2}(\tau) u(t-\tau) d \tau$
Let $h(t)$ be the impulse response of a linear time invariant system. Then the response of the system for any input $u(t)$ is$\int_{0}^{t} h(\tau) u(t-\tau) d \tau$$\frac...
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GATE ECE 1995 | Question 1.17
The probability that an electron in a metal occupies the Fermi-level at any temperature $(>0 \mathrm{~K})$ $0$ $1$ $0.5$ $1.0$
The probability that an electron in a metal occupies the Fermi-level at any temperature $(>0 \mathrm{~K})$$0$$1$$0.5$$1.0$
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GATE ECE 1995 | Question 1.19
The diffusion potential across a $\text{P-N}$ junction decreases with increasing doping concentration increases with decreasing band gap does not depend on doping concentration increases with increase in doping concentrations
The diffusion potential across a $\text{P-N}$ junctiondecreases with increasing doping concentrationincreases with decreasing band gapdoes not depend on doping concentrat...
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GATE ECE 1995 | Question 1.20
The break down voltage of a transistor with its base open is $\mathrm{BV}_{\mathrm{CEO}}$ and that with emitter open is $\mathrm{BV}_{\mathrm{CBO}^{ }}$ then $\mathrm{BV}_{\mathrm{CEO}}=\mathrm{BV}_{\mathrm{CBO}}$ ... $\mathrm{BV}_{\mathrm{CEO}}$ is not related to $\mathrm{BV}_{\mathrm{CBO}}$
The break down voltage of a transistor with its base open is $\mathrm{BV}_{\mathrm{CEO}}$ and that with emitter open is $\mathrm{BV}_{\mathrm{CBO}^{‘}}$ then$\mathrm{BV...
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GATE ECE 1995 | Question 1.21
In a $\text{P}$ type silicon sample, the hole concentration is $2.25 \times 10^{15} / \mathrm{cm}^{3}$. If the intrinsic carrier concentration is $1.5 \times 10^{10} / \mathrm{cm}^{3}$, the electron concentration is zero $10^{10} / \mathrm{cm}^{3}$ $10^{5} / \mathrm{cm}^{3}$ $1.5 \times 10^{25} / \mathrm{cm}^{3}$.
In a $\text{P}$ type silicon sample, the hole concentration is $2.25 \times 10^{15} / \mathrm{cm}^{3}$. If the intrinsic carrier concentration is $1.5 \times 10^{10} / \m...
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GATE ECE 1995 | Question 1.22
A zener diode works on the principle of tunneling of charge carriers across the junction thermionic emission diffusion of charge carriers across the junction hopping of charge carriers across the junction
A zener diode works on the principle oftunneling of charge carriers across the junctionthermionic emissiondiffusion of charge carriers across the junctionhopping of charg...
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GATE ECE 1995 | Question 1.23
A $\text{BJT}$ is said to be operating in the saturation region if both the junctions are reverse biased base-emitter junction is reverse biased and base-collector junction is forward biased base-emitter junction is forward biased and base-collector junction reverse-biased both the junctions are forward biased
A $\text{BJT}$ is said to be operating in the saturation region ifboth the junctions are reverse biasedbase-emitter junction is reverse biased and base-collector junction...
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GATE ECE 1995 | Question 1.24
The depletion capacitance, $\mathrm{C}_{\mathrm{J}}$, of an abrupt $\mathrm{P}-\mathrm{N}$ junction with constant doping on either side varies with reverse bias, $V_{R^{\prime}}$ as $C_{\mathrm{J}} \propto V_{\mathrm{R}}$ ... $\mathrm{C}_{\mathrm{J}} \alpha \mathrm{V}_{\mathrm{R}}^{-1 / 3}$
The depletion capacitance, $\mathrm{C}_{\mathrm{J}}$, of an abrupt $\mathrm{P}-\mathrm{N}$ junction with constant doping on either side varies with reverse bias, $V_{R^{\...
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GATE ECE 1995 | Question 1.26
The Ebers-Moll model is applicable to bipolar junction transistors $\text{NMOS}$ transistors unipolar junction transistors junction field-effect transistors
The Ebers-Moll model is applicable tobipolar junction transistors$\text{NMOS}$ transistorsunipolar junction transistorsjunction field-effect transistors
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GATE ECE 1995 | Question 1.27
To obtain very high input and output impedances in a feedback amplifier, the topolomostly used is voltage-series current-series voltage-shunt current-shunt
To obtain very high input and output impedances in a feedback amplifier, the topolomostly used isvoltage-seriescurrent-seriesvoltage-shuntcurrent-shunt
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GATE ECE 1995 | Question 1.28
The output of the circuit in the figure is equal to $0$ $1$ $\overline{\mathrm{A}} \mathrm{B}+\mathrm{A} \overline{\mathrm{B}}$ $\overline{(\mathrm{A} * \mathrm{~B})} * \overline{(\mathrm{A} * \mathrm{~B})}$
The output of the circuit in the figure is equal to$0$$1$$\overline{\mathrm{A}} \mathrm{B}+\mathrm{A} \overline{\mathrm{B}}$$\overline{(\mathrm{A} * \mathrm{~B})} * \over...
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GATE ECE 1995 | Question 1.29
The minimum number of $\text{NAND}$ gates required to implement the Boolean function $\mathrm{A}+\mathrm{A} \overline{\mathrm{B}}+\mathrm{A} \overline{\mathrm{B}} \mathrm{C}$, is equal to zero $1$ $4$ $7$
The minimum number of $\text{NAND}$ gates required to implement the Boolean function $\mathrm{A}+\mathrm{A} \overline{\mathrm{B}}+\mathrm{A} \overline{\mathrm{B}} \mathrm...
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GATE ECE 1995 | Question 1.30
A switch-tail ring counter is made by using a single $\text{D}$ flip-flop. The resulting circuit is a $\text{SR}$ flip-flop $\text{JK}$ flip-flop $\text{D}$ flip-flop $\text{T}$ flip-flop
A switch-tail ring counter is made by using a single $\text{D}$ flip-flop. The resulting circuit is a$\text{SR}$ flip-flop$\text{JK}$ flip-flop$\text{D}$ flip-flop$\text{...
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GATE ECE 1995 | Question 1.31
When a $\text{CPU}$ is interrupted, it stops execution of instructions acknowledges interrupt and branches of subroutine acknowledges interrupt and continues acknowledges interrupt and waits for the next instruction from the interrupting device
When a $\text{CPU}$ is interrupted, itstops execution of instructionsacknowledges interrupt and branches of subroutineacknowledges interrupt and continuesacknowledges int...
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GATE ECE 1995 | Question 1.32
The minimum number of $\text{MOS}$ transistors required to make a dynamic $\text{RAM}$ cell is $1$ $2$ $3$ $4$
The minimum number of $\text{MOS}$ transistors required to make a dynamic $\text{RAM}$ cell is$1$$2$$3$$4$
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GATE ECE 1995 | Question 1.33
An $\text{R-S}$ latch is a combinatorial circuit synchronous sequential circuit one bit memory element one clock delay element
An $\text{R-S}$ latch is acombinatorial circuitsynchronous sequential circuitone bit memory elementone clock delay element
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GATE ECE 1995 | Question 1.34
A $\text{‘DMA'}$ transfer implies direct transfer of data between memory and accumulator direct transfer of data between memory and I/O devices without the use of $\mu p$ transfer of data exclusively within $\mu P$ registers A fast transfer of data between $\mu P$ and $1 / O$ devices
A $\text{‘DMA'}$ transfer impliesdirect transfer of data between memory and accumulatordirect transfer of data between memory and I/O devices without the use of $\mu p$...
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GATE ECE 1995 | Question 1.35
An 'Assembler' for a microprocessor is used for assembly of processors in a production line creation of new programmes using different modules translation of a program from assembly language to machine language translation of a higher level language into English text
An 'Assembler' for a microprocessor is used forassembly of processors in a production linecreation of new programmes using different modulestranslation of a program from ...
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GATE ECE 1995 | Question 1.36
The image (second) channel selectivity of a super beterodync communication receiver is determined by antenna and preselector the preselector and $\text{RF}$ amplifier the preselector and $\text{IF}$ amplifier the $\text{RF}$ and $\text{IF}$ amplifier
The image (second) channel selectivity of a super beterodync communication receiver is determined byantenna and preselectorthe preselector and $\text{RF}$ amplifierthe pr...
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GATE ECE 1995 | Question 1.37
For a narrow band noise with Gaussian Gradrature components, the probability density function of its envelope will be uniform Gaussian exponential Rayleigh
For a narrow band noise with Gaussian Gradrature components, the probability density function of its envelope will beuniformGaussianexponentialRayleigh
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GATE ECE 1995 | Question 1.38
If the number of bits per sample in a $\text{PCM}$ system is increased from improvement in signal-to quantisation noise ratio will be $3 \mathrm{~d B}$ $6 \mathrm{~d B}$ $2 n \mathrm{~d B}$ $0 \mathrm{~d B}$
If the number of bits per sample in a $\text{PCM}$ system is increased from improvement in signal-to quantisation noise ratio will be$3 \mathrm{~d B}$$6 \mathrm{~d B}$$2...
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GATE ECE 1995 | Question 1.40
A $\text{PAM}$ signal can be detected by using an $\text{ADC}$ an integrator a band pass filter a high pass filter
A $\text{PAM}$ signal can be detected by usingan $\text{ADC}$an integratora band pass filtera high pass filter
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