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In the three dimensional view of a silicon n-channel MOS transistor shown below, $\delta=20\:nm$. The transistor is of width $1\: \mu m$. The depletion width formed at every p-n junction is $10\:nm$. The relative permittivities of $Si$ and $SiO_2$, respectively, are $11.7$ and $3.9$, and $\varepsilon_0=8.9 \times 10^{-12} \: F/m$.

The gate-source overlap capacitance is approximately

1. $0.7\:fF$
2. $0.7\:pF$
3. $0.35\:fF$
4. $0.24\:pF$