When the gate-to-source voltage $\left(\mathrm{V}_{\mathrm{GS}}\right)$ of a MOSFET with threshold voltage of $400 \; \mathrm{mV}$, working in saturation is $900 \; \mathrm{mV}$, the drain current is observed to be $1 \mathrm{~mA}$. Neglecting the channel width modulation effect and assuming that the MOSFET is operating at saturation, the drain current for an applied $\mathrm{V}_{\mathrm{GS}}$ of $1400 \; \mathrm{mV}$ is
- $0.5 \mathrm{~mA}$
- $2.0 \mathrm{~mA}$
- $3.5 \mathrm{~mA}$
- $4.0 \mathrm{~mA}$