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When the gate-to-source voltage $\left(\mathrm{V}_{\mathrm{GS}}\right)$ of a MOSFET with threshold voltage of $400 \; \mathrm{mV}$, working in saturation is $900 \; \mathrm{mV}$, the drain current is observed to be $1 \mathrm{~mA}$. Neglecting the channel width modulation effect and assuming that the MOSFET is operating at saturation, the drain current for an applied $\mathrm{V}_{\mathrm{GS}}$ of $1400 \; \mathrm{mV}$ is

  1. $0.5 \mathrm{~mA}$
  2. $2.0 \mathrm{~mA}$
  3. $3.5 \mathrm{~mA}$
  4. $4.0 \mathrm{~mA}$

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