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GATE ECE 2003 | Question: 1
The minimum number of equations required to analyze the circuit shown in the figure is $3$ $4$ $6$ $7$
The minimum number of equations required to analyze the circuit shown in the figure is$3$$4$$6$$7$
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GATE ECE 2003 | Question: 2
A source of angular frequency $1 \; \mathrm{rad} / \mathrm{sec}$ has a source impedance consisting of $1 \Omega$ resistance in series with $1 \; \mathrm{H}$ inductance. The load that will obtain the maximum power transfer is $1 \; \Omega$ ... resistance in series with $1 \mathrm{~F}$ capacitor $1 \; \Omega$ resistance in parallel with $1 \mathrm{~F}$ capacitor
A source of angular frequency $1 \; \mathrm{rad} / \mathrm{sec}$ has a source impedance consisting of $1 \Omega$ resistance in series with $1 \; \mathrm{H}$ inductance. T...
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GATE ECE 2003 | Question: 3
A series $\text{RLC}$ circuit has a resonance frequency of $1 \; \mathrm{kHz}$ and a quality factor $\text{Q}=100$. If each of $\text{R, L}$ and $\text{C}$ is doubled from its original value, the new $\text{Q}$ of the circuit is $25$ $50$ $100$ $200$
A series $\text{RLC}$ circuit has a resonance frequency of $1 \; \mathrm{kHz}$ and a quality factor $\text{Q}=100$. If each of $\text{R, L}$ and $\text{C}$ is doubled fro...
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GATE ECE 2003 | Question: 4
The Laplace transform of $i(t)$ is given by $ I(s)=\frac{2}{s(1+s)} $ As $t \rightarrow \infty$, the value of $i(t)$ lends to $0$ $1$ $2$ $\infty$
The Laplace transform of $i(t)$ is given by $$ I(s)=\frac{2}{s(1+s)} $$ As $t \rightarrow \infty$, the value of $i(t)$ lends to$0$$1$$2$$\infty$
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GATE ECE 2003 | Question: 5
The differential equation for the current $i(t)$ in the circuit of the figure is $2 \frac{d^2 i}{d t^2}+2 \frac{d i}{d t}+i(t)=\sin t$ $\frac{d^2 i}{d t^2}+2 \frac{d i}{d t}+2 i(t)=\cos t$ $2 \frac{d^2 i}{d t^2}+2 \frac{d i}{d t}+i(t)=\cos t$ $\frac{d^2 i}{d t^2}+2 \frac{d i}{d t}+2 i(t)=\sin t$
The differential equation for the current $i(t)$ in the circuit of the figure is$2 \frac{d^2 i}{d t^2}+2 \frac{d i}{d t}+i(t)=\sin t$$\frac{d^2 i}{d t^2}+2 \frac{d i}{d t...
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GATE ECE 2003 | Question: 6
$n$-type silicon is obtained by doping silicon with Germanium Aluminium Boron Phosphorus
$n$-type silicon is obtained by doping silicon withGermaniumAluminiumBoronPhosphorus
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GATE ECE 2003 | Question: 7
The bandgap of silicon at $300 \mathrm{~K}$ is $1.36 \; \mathrm{eV}$ $1.10 \; \mathrm{eV}$ $0.80 \; \mathrm{eV}$ $0.67 \; \mathrm{eV}$
The bandgap of silicon at $300 \mathrm{~K}$ is$1.36 \; \mathrm{eV}$$1.10 \; \mathrm{eV}$$0.80 \; \mathrm{eV}$$0.67 \; \mathrm{eV}$
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GATE ECE 2003 | Question: 8
The intrinsic carrier concentration of silicon sample at $300 \mathrm{~K}$ is $1.5 \times 10^{16} / \mathrm{m}^3$. If after doping, the number of majority carriers is $5 \times 10^{20} / \mathrm{m}^3$, the minority carrier density is $4.50 \times 10^{11} / \mathrm{m}^3$ ... $5.00 \times 10^{20} / \mathrm{m}^3$ $3.00 \times 10^{-5} / \mathrm{m}^3$
The intrinsic carrier concentration of silicon sample at $300 \mathrm{~K}$ is $1.5 \times 10^{16} / \mathrm{m}^3$. If after doping, the number of majority carriers is $5 ...
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GATE ECE 2003 | Question: 9
Choose proper substitutes for $\mathrm{X}$ and $\mathrm{Y}$ to make the following statement correct Tunnel diode and Avalanche photodiode are operated in $\mathrm{X}$ bias and $\mathrm{Y}$ bias respectively. $\mathrm{X}:$ reverse, $\mathrm{Y}:$ ... $\mathrm{X}:$ forward, $\mathrm{Y}:$ reverse $\mathrm{X}:$ forward, $\mathrm{Y}:$ forward
Choose proper substitutes for $\mathrm{X}$ and $\mathrm{Y}$ to make the following statement correct Tunnel diode and Avalanche photodiode are operated in $\mathrm{X}$ bia...
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GATE ECE 2003 | Question: 10
For an $n$-channel enhancement type MOSFET, if the source is connected at a higher potential than that of the bulk (i.e. $V_{SB}>0$ ), the threshold voltage $V_T$ of the MOSFET will remain unchanged decrease change polarity increase
For an $n$-channel enhancement type MOSFET, if the source is connected at a higher potential than that of the bulk (i.e. $V_{SB}>0$ ), the threshold voltage $V_T$ of the ...
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GATE ECE 2003 | Question: 11
Choose the correct match for input resistance of various amplifier configurations shown below ... $\text{CB-LO, CC-HI, CE-MO}$ $\text{CB-MO, CC-HI, CE-LO}$ $\text{CB-HI, CC-LO, CE-MO}$
Choose the correct match for input resistance of various amplifier configurations shown below$\begin{array}{ll}\text { Configuration } & \text { Input resistance } \\ \te...
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GATE ECE 2003 | Question: 12
The circuit shown in the figure is best described as a bridge rectifier ring modulator frequency discriminatory voltage doubler
The circuit shown in the figure is best described as abridge rectifierring modulatorfrequency discriminatoryvoltage doubler
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GATE ECE 2003 | Question: 13
If the input to the ideal comparator shown in the figure is a sinusoidal signal of $8 \mathrm{~V}$ (peak to peak) without any DC component, then the output of the comparator has a duty cycle of $1 / 2$ $1 / 3$ $1 / 6$ $1 / 12$
If the input to the ideal comparator shown in the figure is a sinusoidal signal of $8 \mathrm{~V}$ (peak to peak) without any DC component, then the output of the compara...
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GATE ECE 2003 | Question: 14
If the differential voltage gain and the common mode voltage gain of a differential amplifier are $48 \mathrm{~dB}$ and $2 \mathrm{~dB}$ respectively, then its common mode rejection ratio is $23 \mathrm{~dB}$ $25 \mathrm{~dB}$ $46 \mathrm{~dB}$ $50 \mathrm{~dB}$
If the differential voltage gain and the common mode voltage gain of a differential amplifier are $48 \mathrm{~dB}$ and $2 \mathrm{~dB}$ respectively, then its common mod...
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GATE ECE 2003 | Question: 15
Generally, the gain of a transistor amplifier falls at high frequencies due to the internal capacitances of the device coupling capacitor at the input skin effect coupling capacitor at the output
Generally, the gain of a transistor amplifier falls at high frequencies due to theinternal capacitances of the devicecoupling capacitor at the inputskin effectcoupling ca...
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GATE ECE 2003 | Question: 16
The number of distinct Boolean expressions of $4$ variables is $16$ $256$ $1024$ $65536$
The number of distinct Boolean expressions of $4$ variables is$16$$256$$1024$$65536$
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GATE ECE 2003 | Question: 17
The minimum number of comparators required to build an $8$ bit flash ADC is $8$ $63$ $255$ $256$
The minimum number of comparators required to build an $8$ bit flash ADC is$8$$63$$255$$256$
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GATE ECE 2003 | Question: 18
The output of the $74$ series of $\text{TTL}$ gates is taken from a $\text{BJT}$ in totem pole and common collector configuration either totem pole or open collector configuration common base configuration common collector configuration
The output of the $74$ series of $\text{TTL}$ gates is taken from a $\text{BJT}$ intotem pole and common collector configurationeither totem pole or open collector config...
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GATE ECE 2003 | Question: 19
Without any additional circuitry, an $8: 1 \; \mathrm{MUX}$ can be used to obtain some but not all Boolean functions of $3$ variables all functions of $3$ variables but none of $4$ variables all functions of $3$ variables and some but not all of $4$ variables all functions of $4$ variables
Without any additional circuitry, an $8: 1 \; \mathrm{MUX}$ can be used to obtainsome but not all Boolean functions of $3$ variablesall functions of $3$ variables but non...
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GATE ECE 2003 | Question: 20
A $0$ to $6$ counter consists of $3$ flip flops and a combination circuit of $2$ input gate(s). The combination circuit consists of one AND gate one OR gate one AND gate and one OR gate two AND gates
A $0$ to $6$ counter consists of $3$ flip flops and a combination circuit of $2$ input gate(s). The combination circuit consists ofone AND gateone OR gateone AND gate and...
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GATE ECE 2003 | Question: 21
The Fourier series expansion of a real periodic signal with fundamental frequency $\mathrm{f}_0$ is given by $ g_p(t)=\sum_{n=-\infty}^{\infty} c_n e^{j 2 \pi n f_\omega t} $ It is given that $c_3=3+j 5$. Then $c_{-3}$ is $5+j 3$ $-3-j 5$ $-5+j 3$ $3-j 5$
The Fourier series expansion of a real periodic signal with fundamental frequency $\mathrm{f}_0$ is given by $$ g_p(t)=\sum_{n=-\infty}^{\infty} c_n e^{j 2 \pi n f_\omega...
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GATE ECE 2003 | Question: 22
Let $x(t)$ be the input to a linear, time-invariant system. The required output is $4 x(t-2)$. The transfer function of the system should be $4 e^{j4 \pi f}$ $2 e^{-j8 \pi f}$ $4 e^{-j4 \pi f}$ $2 e^{j8 \pi f}$
Let $x(t)$ be the input to a linear, time-invariant system. The required output is $4 x(t-2)$. The transfer function of the system should be$4 e^{j4 \pi f}$$2 e^{-j8 \pi ...
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GATE ECE 2003 | Question: 23
A sequence $x(n)$ with the z-transform $X(z)=z^4+z^2-2 z+2-3 z-4$ is applied as an input to a linear, time-invariant system with the impulse response $h(n)=2 \delta(n-3)$ where $ \delta(n)= \begin{cases}1, & n=0 \\ 0, & \text { otherwise }\end{cases} $ The output at $n=4$ is $-6$ zero $2$ $-4$
A sequence $x(n)$ with the z-transform $X(z)=z^4+z^2-2 z+2-3 z-4$ is applied as an input to a linear, time-invariant system with the impulse response $h(n)=2 \delta(n-3)$...
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GATE ECE 2003 | Question: 24
The figure shows the Nyquist plot of the open-loop transfer function $\mathrm{G}(\mathrm{s}) \mathrm{H}(s)$ of a system. If $\mathrm{G}(s) \mathrm{H}(\mathrm{s})$ has one right-hand pole, the closed-loop system is always stable unstable with one closed-loop right hand pole unstable with two closed-loop right hand poles unstable with three closed-loop right hand poles
The figure shows the Nyquist plot of the open-loop transfer function $\mathrm{G}(\mathrm{s}) \mathrm{H}(s)$ of a system. If $\mathrm{G}(s) \mathrm{H}(\mathrm{s})$ has one...
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GATE ECE 2003 | Question: 25
A PD controller is used to compensate a system. Compared to the uncompensated system, the compensated system has a higher type number reduced damping higher noise amplification larger transient overshoot
A PD controller is used to compensate a system. Compared to the uncompensated system, the compensated system hasa higher type numberreduced dampinghigher noise amplificat...
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GATE ECE 2003 | Question: 26
The input to a coherent detector is DSB-SC signal plus noise. The noise at the detector output is the in-phase component the quadrature-component zero the envelope
The input to a coherent detector is DSB-SC signal plus noise. The noise at the detector output isthe in-phase componentthe quadrature-componentzerothe envelope
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GATE ECE 2003 | Question: 27
The noise at the input to an ideal frequency detector is white. The detector is operating above threshold. The power spectral density of the noise at the output is raised-cosine flat parabolic Gaussian
The noise at the input to an ideal frequency detector is white. The detector is operating above threshold. The power spectral density of the noise at the output israised-...
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GATE ECE 2003 | Question: 28
At a given probability of error, binary coherent $\text{FSK}$ is inferior to binary coherent $\text{PSK}$ by $6 \mathrm{~dB}$ $3 \mathrm{~dB}$ $2 \mathrm{~dB}$ $0 \mathrm{~dB}$
At a given probability of error, binary coherent $\text{FSK}$ is inferior to binary coherent $\text{PSK}$ by$6 \mathrm{~dB}$$3 \mathrm{~dB}$$2 \mathrm{~dB}$$0 \mathrm{~dB...
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GATE ECE 2003 | Question: 29
The unit of $\nabla \times \mathrm{H}$ is Ampere Ampere/meter Ampere/meter ${ }^{2}$ Ampere-meter
The unit of $\nabla \times \mathrm{H}$ isAmpereAmpere/meterAmpere/meter ${ }^{2}$Ampere-meter
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GATE ECE 2003 | Question: 30
The depth of penetration of electromagnetic wave in a medium having conductivity $\sigma$ at a frequency of $1 \; \mathrm{MHz}$ is $25 \mathrm{~cm}$. The depth of penetration at a frequency of $4 \; \mathrm{MHz}$ will be $6.25 \mathrm{~cm}$ $12.50 \mathrm{~cm}$ $50.00 \mathrm{~cm}$ $100.00 \mathrm{~cm}$
The depth of penetration of electromagnetic wave in a medium having conductivity $\sigma$ at a frequency of $1 \; \mathrm{MHz}$ is $25 \mathrm{~cm}$. The depth of penetra...
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GATE ECE 2003 | Question: 31
Twelve $1 \; \Omega$ resistance are used as edges to form a cube. The resistance between two diagonally opposite corners of the cube is $\frac{5}{6} \; \Omega$ $1 \; \Omega$ $\frac{6}{5} \; \Omega$ $\frac{3}{2} \; \Omega$
Twelve $1 \; \Omega$ resistance are used as edges to form a cube. The resistance between two diagonally opposite corners of the cube is$\frac{5}{6} \; \Omega$$1 \; \Omega...
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GATE ECE 2003 | Question: 32
The current flowing through the resistance $\text{R}$ in the circuit in the figure has the form $\text{P} \cos 4 t$, where $\text{P}$ is $(0.18+j 0.72)$ $(0.46+j 1.90)$ $-(0.18+j 1.90)$ $-(0.192+j 0.144)$
The current flowing through the resistance $\text{R}$ in the circuit in the figure has the form $\text{P} \cos 4 t$, where $\text{P}$ is$(0.18+j 0.72)$$(0.46+j 1.90)$$-(0...
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GATE ECE 2003 | Question: 33
The circuit for $\text{Q. 33-34}$ are given in the figure. For both are the questions, assume that the switch $S$ is in position $1$ for a long time and thrown to position $2$ at $t=0$. At $t=0+$, the current $i_{1}$ is $\frac{-\mathrm{V}}{2 \mathrm{R}}$ $\frac{-\mathrm{V}}{\mathrm{R}}$ $\frac{-\mathrm{V}}{4 \mathrm{R}}$ zero
The circuit for $\text{Q. 33-34}$ are given in the figure. For both are the questions, assume that the switch $S$ is in position $1$ for a long time and thrown to positio...
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GATE ECE 2003 | Question: 34
The circuit for $\text{Q. 33-34}$ are given in the figure. For both are the questions, assume that the switch $S$ is in position $1$ for a long time and thrown to position $2$ at $t=0$. $I_{1}(s)$ and $I_{2}(s)$ are the Laplace transforms of $i_{1}(t)$ ...
The circuit for $\text{Q. 33-34}$ are given in the figure. For both are the questions, assume that the switch $S$ is in position $1$ for a long time and thrown to positio...
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GATE ECE 2003 | Question: 35
An input voltage $v(t)=10 \sqrt{2} \cos \left(t+10^{\circ}\right)+10 \sqrt{3}$ $\cos \left(2 t+10^{\circ}\right) \mathrm{V}$ is applied to a series combination of resistance $R=1 \Omega$ and an inductance $L=1H$. The resulting steady-state current $i(t)$ in ampere is ... $10 \cos (t-35)+10 \sqrt{\frac{3}{2}} \cos \left(2 t-35^{\circ}\right)$
An input voltage $v(t)=10 \sqrt{2} \cos \left(t+10^{\circ}\right)+10 \sqrt{3}$ $\cos \left(2 t+10^{\circ}\right) \mathrm{V}$ is applied to a series combination of resista...
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GATE ECE 2003 | Question: 36
The driving-point impedance $Z(s)$ of a network has the pole-zero locations as shown in the figure. If $Z(0)=3$, then $Z(s)$ is $\frac{3(s+3)}{s^{2}+2 s+3}$ $\frac{2(s+3)}{s^{2}+2 s+2}$ $\frac{3(s-3)}{s^{2}-2 s-2}$ $\frac{2(s-3)}{s^{2}-2 s-3}$
The driving-point impedance $Z(s)$ of a network has the pole-zero locations as shown in the figure. If $Z(0)=3$, then $Z(s)$ is$\frac{3(s+3)}{s^{2}+2 s+3}$$\frac{2(s+3)}{...
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GATE ECE 2003 | Question: 37
The impedance parameters $Z_{11}$ and $Z_{12}$ of the two-port network in the figure are $Z_{11}=2.75 \; \Omega$ and $Z_{12}=0.25 \; \Omega$ $Z_{11}=3 \; \Omega$ and $Z_{12}=0.5 \; \Omega$ $Z_{11}=3 \; \Omega$ and $Z_{12}=0.25 \; \Omega$ $Z_{11}=2.25 \; \Omega$ and $Z_{12}=0.5 \; \Omega$
The impedance parameters $Z_{11}$ and $Z_{12}$ of the two-port network in the figure are$Z_{11}=2.75 \; \Omega$ and $Z_{12}=0.25 \; \Omega$$Z_{11}=3 \; \Omega$ and $Z_{12...
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GATE ECE 2003 | Question: 38
An $n$-type silicon bar $0.1 \mathrm{~cm}$ long and $100 \; \mu \mathrm{m}^{2}$ in cross-sectional area has a majority carrier concentration of $5 \times 1020 / \mathrm{m}^{3}$ and the carrier mobility is $0.13 \mathrm{~m}^{0} / \mathrm{V}-s$ at $300 \mathrm{~K}$. ... $10^{6} \; \mathrm{ohm}$ $10^{4} \; \mathrm{ohm}$ $10^{-1} \; \mathrm{ohm}$ $10^{-4} \; \mathrm{ohm}$
An $n$-type silicon bar $0.1 \mathrm{~cm}$ long and $100 \; \mu \mathrm{m}^{2}$ in cross-sectional area has a majority carrier concentration of $5 \times 1020 / \mathrm{m...
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GATE ECE 2003 | Question: 39
The electron concentration in a sample of uniformly doped $n$-type silicon at $300 \mathrm{~K}$ varies linearly from $10^{17} / \mathrm{cm}^{3}$ at $x=0$ to $6 \times 10^{16} / \mathrm{cm}^{3}$ at $x=2 \; \mu \mathrm{m}$. Assume a situation that electrons are supplied to ... , is zero $- 1120 \; \text{A/cm}^{2}$ $+ 1120 \; \text{A/cm}^{2}$ $- 1120 \; \text{A/cm}^{2}$
The electron concentration in a sample of uniformly doped $n$-type silicon at $300 \mathrm{~K}$ varies linearly from $10^{17} / \mathrm{cm}^{3}$ at $x=0$ to $6 \times 10^...
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GATE ECE 2003 | Question: 41
At $300 \mathrm{~K}$, for a diode current of $1 \mathrm{~mA}$, a certain germanium diode requires a forward bias of $0.1435 \mathrm{~V}$, whereas a certain silicon diode requires a forward bias of $0.178 \mathrm{~V}$. Under the conditions stated above, ... saturation current in germanium diode to that in silicon diode is $1$ $5$ $4 \times 10^{3}$ $8 \times 10^{3}$
At $300 \mathrm{~K}$, for a diode current of $1 \mathrm{~mA}$, a certain germanium diode requires a forward bias of $0.1435 \mathrm{~V}$, whereas a certain silicon diode ...
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