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At $300 \mathrm{~K}$, for a diode current of $1 \mathrm{~mA}$, a certain germanium diode requires a forward bias of $0.1435 \mathrm{~V}$, whereas a certain silicon diode requires a forward bias of $0.178 \mathrm{~V}$. Under the conditions stated above, the closest approximation of the ratio of reverse saturation current in germanium diode to that in silicon diode is

  1. $1$
  2. $5$
  3. $4 \times 10^{3}$
  4. $8 \times 10^{3}$

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