0 0 votes At $300 \mathrm{~K}$, for a diode current of $1 \mathrm{~mA}$, a certain germanium diode requires a forward bias of $0.1435 \mathrm{~V}$, whereas a certain silicon diode requires a forward bias of $0.178 \mathrm{~V}$. Under the conditions stated above, the closest approximation of the ratio of reverse saturation current in germanium diode to that in silicon diode is $1$ $5$ $4 \times 10^{3}$ $8 \times 10^{3}$ Diode Circuits gate2003-ec diode-circuits semiconductor numerical-answers + – admin 318 views answer comment Share Follow Add Sync Questions Print 0 reply Please log in or register to add a comment.